A Crucial "CT12G56C46S5" Non-ECC Small Outline Dual In-line Memory Module (SODIMM) is available to pre-order from Amazon UK—the 12 GB capacity product was spotted by everyone's favorite PC hardware sleuth;—momomo_us. March 31 appears to be the official shipping out date—current pricing is £44.99 ($57.50). Additionally, customers have the option to reserve a related 24 GB Kit (2x 12 GB) kit (CT2K12G56C46S5), priced at £87.99 (~$112.36). According to product descriptions, Crucial's upcoming laptop 5600 MHz RAM "can downclock if system specification only supports 5200 MHz or 4800 MHz."

"Non-binary modules" DDR5 modules hit retail last year—we have witnessed a slow trickle out of 24 GB and 48 GB capacity sticks, granting unusual memory configurations on compatible AMD and Intel platforms. The CT12G56C46S5 and CT2K12G56C46S5 are supported by "Core 13th Gen and Ryzen 6000 Series laptop CPUs and above." Crucial's latest DDR5 SODIMM could be the first 12 GB capacity model to reach retail, unless a rival manufacturer sneaks out an equivalent item prior to March 31.

Micron Technology, Inc., an industry leader in innovative memory and storage solutions, today announced the appointment of Robert (Bob) Swan to its board of directors. A recognized leader with a distinguished career in the semiconductor, technology and industrial sectors, Swan currently serves as an operating partner at Andreessen Horowitz, where he advises growth-stage portfolio companies.

Swan's extensive background includes his tenure as CFO and later CEO of Intel Corporation, where he oversaw 110,000 employees and $78 B in annual sales. Prior to joining Intel, as CFO of eBay, Swan played a significant role in driving the company's global expansion strategy. Swan also held notable roles as CFO at Electronic Data Systems Corp., TRW Inc., and Webvan Group, Inc., where he additionally served as COO and CEO.

According to TPU's SSD database, the Microsoft Z1000 M.2 22110 form factor solid-state drive launched back in 2020—last week, well-known hardware tipster, yuuki_ans, leaked a set of photos and specifications. Their March 7 social media post showcases close-ups of a potential enterprise product—sporting a CNEX Labs CNX-2670AA-CB2T controller, Toshiba BiCS4 96-layer eTLC NAND flash dies and 1 GB Micron MT40A1G8SA-075:E DDR4 RAM cache. The mysterious storage device appears to be an engineering sample (PV1.1)—an attached label lists a possible manufacturing date of May 18, 2020, but its part number and serial code are redacted in yuuki's set of photos. PCIe specifications are not disclosed, but experts reckon that a 4.0 standard is present here (given the prototype's age).

The long form factor and presence of a CNEX Labs controller suggest that Microsoft has readied a 960 GB capacity model for usage in data servers. Unoccupied spaces on the board provide evidence of different configurations. Extra BGA mounting points could introduce another DRAM chip, and there is enough room for additional capacitors—via solder pads on both sides of the Z1000's PCB. It is speculated that 2 TB and 4 TB variants exist alongside the leaked 960 GB example—a "broad portfolio" of finalized Z1000 products could be in service right now, but the wider public is unlikely to see these items outside of Microsoft facilities.

The third quarter of 2023 witnessed suppliers dramatically cutting production, which underpinned enterprise SSD prices. The fourth quarter saw a resurgence in contract prices, driven by robust buying activity and heightened demand from server brands and buoyed by optimistic capital expenditure forecasts for 2024. This, combined with increased demand from various end products entering their peak sales period and ongoing reductions in OEM NAND Flash inventories, resulted in some capacity shortages. Consequently, fourth-quarter enterprise SSD prices surged by over 15%. TrendForce highlights that this surge in demand and prices led to a 47.6% QoQ increase in enterprise SSD industry revenues in 4Q23, reaching approximately $23.1 billion.

The stage is set for continued fervor as we settle into the new year and momentum from server brand orders continues to heat up—particularly from Chinese clients. On the supply side, falling inventory levels and efforts to exit loss-making positions have prompted enterprise SSD prices to climb, with contract prices expected to increase by over 25%. This is anticipated to fuel a 20% revenue growth in Q1.

TrendForce reports a substantial 24.5% QoQ increase in NAND Flash industry revenue, hitting US$11.49 billion in 4Q23. This surge is attributed to a stabilization in end-demand spurred by year-end promotions, along with an expansion in component market orders driven by price chasing, leading to robust bit shipments compared to the same period last year. Additionally, the corporate sector's continued positive outlook for 2024 demand—compared to 2023—and strategic stockpiling have further fueled this growth.

Looking ahead to 1Q24, despite it traditionally being an off-season, the NAND Flash industry is expected to see a continued increase in revenue by another 20%. This anticipation is underpinned by significant improvements in supply chain inventory levels and ongoing price rises, with clients ramping up their orders to sidestep potential supply shortages and escalating costs. The ongoing expansion of order sizes is expected to drive NAND Flash contract prices up by an average of 25%.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, is pleased to announce the publication of JESD239 Graphics Double Data Rate (GDDR7) SGRAM. This groundbreaking new memory standard is available for free download from the JEDEC website. JESD239 GDDR7 offers double the bandwidth over GDDR6, reaching up to 192 GB/s per device, and is poised to meet the escalating demand for more memory bandwidth in graphics, gaming, compute, networking and AI applications.

JESD239 GDDR7 is the first JEDEC standard DRAM to use the Pulse Amplitude Modulation (PAM) interface for high frequency operations. Its PAM3 interface improves the signal to noise ratio (SNR) for high frequency operation while enhancing energy efficiency. By using 3 levels (+1, 0, -1) to transmit 3 bits over 2-cycles versus the traditional NRZ (non-return-to-zero) interface transmitting 2 bits over 2-cycles, PAM3 offers higher data transmission rate per cycle resulting in improved performance.

TrendForce reports a 29.6% QoQ in DRAM industry revenue for 4Q23, reaching US$17.46 billion, propelled by revitalized stockpiling efforts and strategic production control by leading manufacturers. Looking ahead to 1Q24, the intent to further enhance profitability is evident, with a projected near 20% increase in DRAM contract prices—albeit with a slight decrease in shipment volumes to the traditional off-season.

Samsung led the pack with the highest revenue growth among the top manufacturers in Q4 as it jumped 50% QoQ to hit $7.95 billion, largely due to a surge in 1alpha nm DDR5 shipments, boosting server DRAM shipments by over 60%. SK hynix saw a modest 1-3% rise in shipment volumes but benefited from the pricing advantage of HBM and DDR5, especially from high-density server DRAM modules, leading to a 17-19% increase in ASP and a 20.2% rise in revenue to $5.56 billion. Micron witnessed growth in both volume and price, with a 4-6% increase in each, resulting in a more moderate revenue growth of 8.9%, totaling $3.35 billion for the quarter due to its comparatively lower share of DDR5 and HBM.

Micron Technology, Inc. announced today that it is delivering qualification samples of an enhanced version of its Universal Flash Storage (UFS) 4.0 mobile solution with breakthrough proprietary firmware features delivered in the world's most compact UFS package at 9x13 millimeters (mm). Built on its advanced 232-layer 3D NAND and offering up to 1 terabyte (TB) capacity, the UFS 4.0 solution provides best-in-class performance and end-to-end innovation, enabling faster and more responsive experiences on flagship smartphones.

Micron UFS 4.0 accelerates data-intensive experiences with up to 4300 megabytes per second (MBps) sequential read and 4000 MBps sequential write speed, twice the performance of previous generations. With these speeds, users will be able to launch their favorite productivity, creativity, and emerging AI apps more quickly. Large language models in generative AI applications can be loaded 40% faster, resulting in a smoother experience when initializing conversations with AI digital companions.

Sabrent today announced its latest flagship M.2 NVMe SSD series, the Rocket 5. Built in the M.2-2280 form-factor, the Sabrent Rocket 5 is sold as a bare drive, with an included fan-heatsink that you install if needed. This cooler comes with a tiny fins-stack, two copper heat pipes, and a 20 mm fan. At the heart of the drive is the new Phison PS5026-E26 Max14um controller, paired with Micron B58R 232-layer 3D TLC NAND flash memory, and LPDDR4 based DRAM cache. The drive comes in 1 TB, 2 TB, and 4 TB capacity variants.

The company didn't put out capacity-specific performance or endurance numbers, but mentioned sequential read speeds of up to 14 GB/s, as is characteristic of the Max14um controller variant; up to 12 GB/s sequential write speeds, up to 1.55 million IOPS 4K random reads, with up to 1.8 million IOPS 4K random writes. The Rocket 5 replaces the Rocket 4 Plus as Sabrent's flagship SSD. The 4 TB variant is listed at $730, the 2 TB variant at $340, and the 1 TB variant at $190.

Micron Technology, Inc. (Nasdaq: MU), a global leader in memory and storage solutions, today announced it has begun volume production of its HBM3E (High Bandwidth Memory 3E) solution. Micron's 24 GB 8H HBM3E will be part of NVIDIA H200 Tensor Core GPUs, which will begin shipping in the second calendar quarter of 2024. This milestone positions Micron at the forefront of the industry, empowering artificial intelligence (AI) solutions with HBM3E's industry-leading performance and energy efficiency. As the demand for AI continues to surge, the need for memory solutions to keep pace with expanded workloads is critical.

Micron's HBM3E solution addresses this challenge head-on with:

• Superior Performance: With pin speed greater than 9.2 gigabits per second (Gb/s), Micron's HBM3E delivers more than 1.2 terabytes per second (TB/s) of memory bandwidth, enabling lightning-fast data access for AI accelerators, supercomputers, and data centers.
• Exceptional Efficiency: Micron's HBM3E leads the industry with ~30% lower power consumption compared to competitive offerings. To support increasing demand and usage of AI, HBM3E offers maximum throughput with the lowest levels of power consumption to improve important data center operational expense metrics.
• Seamless Scalability: With 24 GB of capacity today, Micron's HBM3E allows data centers to seamlessly scale their AI applications. Whether for training massive neural networks or accelerating inferencing tasks, Micron's solution provides the necessary memory bandwidth.

Micron Technology, Inc., today announced two new Crucial Pro Series products with the addition of overclocking-capable memory and the world's fastest Gen 5 SSD. The Crucial DDR5 Pro Memory: Overclocking Edition modules are available in 16 GB densities up to DDR5-6000 to deliver higher performance, lower latencies and better bandwidth to fuel gaming wins and reduce performance bottlenecks. These powerful DDR5 overclocking DRAM modules are compatible with the latest DDR5 Intel and AMD CPUs and support both Intel XMP 3.0 and AMD EXPO specifications on every module, eliminating compatibility hassles. Built with leading-edge Micron 232-layer TLC NAND, the Crucial T705 SSD unleashes the full potential of Gen 5 performance.

Lightning-fast sequential reads and writes up to 14,500 MB/s and 12,700 MB/s (up to 1,550K/1,800K IOPS random reads and writes) respectively, enable faster gaming, video editing, 3D rendering and heavy workload AI application processing. With DDR5 Pro Overclocking DRAM and the T705 SSD, enthusiasts, gamers and professionals can harness the speed, bandwidth and performance they need for AI-ready PC builds capable of processing, rendering and storing large volumes of AI generated content.

Crucial launched its Crucial T700 Gen 5 SSD family midway through last year—a "marquee product" within their (at the time) new Pro Series family—thanks to industry-leading performance. Micron's consumer brand boasted about the T700's technical prowess: "sequential read/write speeds (of) up to 12,400 MB/s and 11,800 MB/s respectively." The Micron 232-layer TLC NAND-equipped SSD range was leaked two months ahead of an eventual May 2023 launch, and history is seemingly repeating itself with a semi-related product in early 2024. Hardware sleuth, momomo_us, has uncovered Crucial T705 and T705 Limited Edition models—the latter appears to be outfitted with a special white variation of the company's "SSD5" corrugated passive heatsink design (as seen in W1zzard's T700 review). Crucial's "SSD3" model suffix indicates a barebones package—minus the chunky "premium" aluminium and nickel-plated copper heatsink.

An alleged T705 specification sheet was leaked to social media over the past weekend—courtesy of Deepbluen's response to the initial momomo_us post. Crucial seems to be targeting industry leading performance once more—their 2 TB T705 model leads the pack with 14,500 MB/s read and 12,700 MB/s write speeds. The capacity range topper (4 TB) trails a little bit behind at 14,100 MB/s read and 12,400 MB/s (respectively), with the 1 TB model exhibiting a relatively sluggish 13,600 MB/s read and 10,200 MB/s (respectively). The leaked sheet does not contain any details regarding Crucial's choice of controller, as well as DRAM cache numbers and endurance figures. We see a repeat of the T700's Micron 232-layer TLC NAND, but we will have to wait a little longer to find out whether Phison's E26 controller is making a comeback (with entailing potential technical issues).

SK Hynix has unveiled ambitious High Bandwidth Memory (HBM) roadmaps at SEMICON Korea 2024. Vice President Kim Chun-hwan announced plans to mass produce the cutting-edge HBM3E within the first half of 2024, touting 8-layer stack samples already supplied to clients. This iteration makes major strides towards fulfilling surging data bandwidth demands, offering 1.2 TB/s per stack and 7.2 TB/s in a 6-stack configuration. VP Kim Chun-hwan cites the rapid emergence of generative AI, forecasted for 35% CAGR, as a key driver. He warns that "fierce survival competition" lies ahead across the semiconductor industry amidst rising customer expectations. With limits approaching on conventional process node shrinks, attention is shifting to next-generation memory architectures and materials to unleash performance.

SK Hynix has already initiated HBM4 development for sampling in 2025 and mass production the following year. According to Micron, HBM4 will leverage a wider 2048-bit interface compared to previous HBM generations to increase per-stack theoretical peak memory bandwidth to over 1.5 TB/s. To achieve these high bandwidths while maintaining reasonable power consumption, HBM4 is targeting a data transfer rate of around 6 GT/s. The wider interface and 6 GT/s speeds allow HBM4 to push bandwidth boundaries significantly compared to prior HBM versions, fueling the need for high-performance computing and AI workloads. But power efficiency is carefully balanced by avoiding impractically high transfer rates. Additionally, Samsung is aligned on a similar 2025/2026 timeline. Beyond pushing bandwidth boundaries, custom HBM solutions will become increasingly crucial. Samsung executive Jaejune Kim reveals that over half its HBM volume already comprises specialized products. Further tailoring HBM4 to individual client needs through logic integration presents an opportunity to cement leadership. As AI workloads evolve at breakneck speeds, memory innovation must keep pace. With HBM3E prepping for launch and HBM4 in the plan, SK Hynix and Samsung are gearing up for the challenges ahead.

According to sources close to Seoul Economy, and reported by DigiTimes, Intel has reportedly chosen Samsung as a supplier for its next-generation Lunar Lake processors, set to debut later this year. The report notes that Samsung will provide LPDDR5X memory devices for integration into Intel's processors. This collaboration could be a substantial win for Samsung, given Intel's projection to distribute millions of Lunar Lake CPUs in the coming years. However, it's important to note that this information is based on a leak and has not been officially confirmed. Designed for ultra-portable laptops, the Lunar Lake-MX platform is expected to feature 16 GB or 32 GB of LPDDR5X-8533 memory directly on the processor package. This on-package memory approach aims to minimize the platform's physical size while enhancing performance over traditional memory configurations. With Lunar Lake's exclusive support for on-package memory, Samsung's LPDDR5X-8533 products could significantly boost sales.

While Samsung is currently in the spotlight, it remains unclear if it will be the sole LPDDR5X memory provider for Lunar Lake. Intel's strategy involves selling processors with pre-validated memory, leaving the door open for potential validation of similar memory products from competitors like Micron and SK Hynix. Thanks to a new microarchitecture, Intel has promoted its Lunar Lake processors as a revolutionary leap in performance-per-watt efficiency. The processors are expected to utilize a multi-chipset design with Foveros technology, combining CPU and GPU chipsets, a system-on-chip tile, and dual memory packages. The CPU component is anticipated to include up to eight cores, a mix of four high-performance Lion Cove and four energy-efficient Skymont cores, alongside advanced graphics, cache, and AI acceleration capabilities. Apple's use of on-package memory in its M-series chips has set a precedent in the industry, and with Intel's Lunar Lake MX, this trend could extend across the thin-and-light laptop market. However, systems requiring more flexibility in terms of configuration, repair, and upgrades will likely continue to employ standard memory solutions like SODIMMs and/or the new CAMM2 modules that offer a balance of high performance and energy efficiency.

Patriot Memory brought their latest ware to the 2024 International CES that use recent advancements in tech on both the SSD and memory fronts. On the SSD front, this year sees 14 GB/s capable PCIe Gen 5 NVMe SSDs thanks to Phison's E26 Max14um controller; and a new crop of USB4 portable SSDs; while the memory front sees DDR5 speeds go far north of DDR5-6000, thanks to on-module CKDs. Patriot showed us examples of each.

First up, there's the Patriot Viper PV573 Gen 5 NVMe SSD. This thing comes in capacities of up to 4 TB, and combines a Phison E26 Max14um controller with Micron's latest B58R TLC NAND flash chips that offer 2400 MT/s per flash channel. The controller also gets some incremental thermal optimizations, which means the cooling solution for the PV573 is a 16.5 mm-tall fan-heatsink. The drive offers up to 14 GB/s sequential reads, with up to 12 GB/s sequential writes. There's also a slightly de-rated version of this drive, the Viper PV553, which has the same combination of controller and NAND flash, but with transfer speeds of up to 12.4 GB/s reads, with up to 11.8 GB/s writes.

Crucial, the client-focused brand of memory giant Micron Technology, showed off a handful new innovations at its booth along the sidelines of the 2024 International CES. First up, is a prototype USB4 portable SSD and prototype desktop SSD. These are proofs of concept, and not actual products. With this, Crucial is testing the waters with USB4 and its delicious 40 Gbps bidirectional bandwidth, which unlocks a new generation of fast removable storage devices. The prototype USB4 portable SSD comes in a tiny chassis about the size of a burner phone. It is a PCB with an M.2-2280 slot with PCIe Gen 4 x4 wiring, connected to an ASMedia ASM2464PD USB4 bridge chip. An OEM Micron Gen 4 SSD with 232-layer 3D TLC NAND flash and LPDDR4 DRAM cache, is installed on this drive. The CDM reading for this drive is 3821 MB/s sequential reads, with 885 MB/s sequential writes.

Next up, is a larger desktop SSD prototype (which again, isn't an actual product but a proof of concept). Its metal chassis is about the size of a 3.5-inch HDD. Inside is at least one M.2-2280 Gen 4 slot (there are probably more); with a preinstalled drive. An ASMedia ASM2464PD handles things here, too. The performance is mostly similar, at 3792 MB/s sequential reads, but with significantly increase 3803 MB/s sequential writes. This may seem unspectacular because Thunderbolt 4 has been delivering 40 Gbps for many years now, and we've had TB4-based external SSDs; but USB4 somewhat democratizes this kind of bandwidth.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its first quarter of fiscal 2024, which ended November 30, 2023.

Fiscal Q1 2024 highlights

• Revenue of $4.73 billion versus $4.01 billion for the prior quarter and $4.09 billion for the same period last year
• GAAP net loss of $1.23 billion, or $1.12 per diluted share
• Non-GAAP net loss of $1.05 billion, or $0.95 per diluted share
• Operating cash flow of $1.40 billion versus $249 million for the prior quarter and $943 million for the same period last year

"Micron's strong execution and pricing drove better-than-anticipated first quarter financial results," said Micron Technology President and CEO Sanjay Mehrotra. "We expect our business fundamentals to improve throughout 2024, with record industry TAM projected for calendar 2025. Our industry-leading High Bandwidth Memory for data center AI applications illustrates the strength of our technology and product roadmaps, and we are well positioned to capitalize on the immense opportunities artificial intelligence is fueling across end markets."

At the beginning of this year, MSI announced the pioneering support for a memory capacity of 192 GB. Today, we are proud to unveil an even greater milestone - MSI motherboards now support memory capacities of up to 256 GB for 4 DIMMs motherboards and 128 GB for 2 DIMMs motherboards. This significant enhancement empowers DIY enthusiasts with unparalleled flexibility to optimize multitasking capabilities and ensures a seamless computing experience.

This accomplishment underscores the strong collaboration between MSI and leading memory brands to achieve enhanced performance and remarkable milestones. The partnered memory for this achievement is Kingston FURY Renegade DDR5 memory, offering an impressive 64 GB capacity per module. Built on Micron's industry-leading 1β (1-beta) technology, enables new capacities not seen before for dual channel PCs.

TrendForce reports a pivotal shift in the NAND Flash market for 3Q23, primarily driven by Samsung's strategic decision to reduce production. Initially, the market was clouded by uncertainty regarding end-user demand and fears of a subdued peak season, prompting buyers to adopt a conservative approach with low inventory and slow procurement. However, as market leaders like Samsung implemented substantial production cuts, buyers' attitudes shifted toward a more aggressive procurement strategy in anticipation of a market supply decrease. This led to a stabilization and even an uptick in NAND Flash contract prices by quarter-end, driving a 3% QoQ increase in bit shipments and culminating in a total revenue of US$9.229 billion, marking an approximate 2.9% increase.

The story unfolds with Kioxia and Micron—the only two to witness a dip in revenue rankings this quarter—while Samsung maintained its robust performance. Despite sluggish demand in the server sector, Samsung's fortunes rebounded thanks to a boost in consumer electronics, especially with high-capacity products in PCs and smartphones. Samsung emerged from a trough in Q3, with strategic inventory replenishments fueling further strategic stocking, and a shift in operational focus toward maximizing profit. This led to a minor 1-3% decrease in shipped bits, but a 1-3% increase in ASP, stabilizing Q3 NAND Flash revenue at US$2.9 billion.

Micron Technology, Inc., today announced it is shipping the Micron 3500 NVMe SSD, which leverages its 232-layer NAND to power demanding workloads for business applications, scientific computing, cutting-edge gaming and content creation, pushing the limits of what is possible. The Micron 3500 SSD, available in the M.2 form factor and with capacities up to 2 TB, provides a superior user experience over the competition as proven by its best-in-class SPECwpcsm performance, including an up to 71% improvement for product development applications.

"At Micron, we are focused on delivering exceptional products that best meet the rigorous needs of end-users," said Prasad Alluri, Micron's vice president and general manager of Client Storage. "With impressive specs like a remarkable 132% improvement in scientific computing benchmark scores, the 3500 SSD will turn your next PC or workstation into a powerhouse to enable insights and empower creativity."

TrendForce investigations reveal a significant leap in the DRAM industry for 3Q23, with total revenues soaring to US$13.48 billion—marking 18% QoQ growth. This surge is attributed to a gradual resurgence in demand, prompting buyers to re-energize their procurement activities. Looking ahead to Q4, while suppliers are firmly set on price hikes, with DRAM contract prices expected to rise by approximately 13-18%, demand recovery will not be as robust as in previous peak seasons. Overall, while there is demand for stockpiling, procurement for the server sector remains tentative due to high inventory levels, suggesting limited growth in DRAM industry shipments for Q4.

Three major manufacturers witnessed Q3 revenue growth. Samsung's revenue increased by about 15.9% to US$5.25 billion thanks to stable demand for high-capacity products fueled by AI advancements and the rollout of its 1alpha nm DDR5. SK hynix showcased the most notable growth among manufacturers with a 34.4% increase, reaching about US$4.626 billion and significantly narrowing its market share gap with Samsung to less than 5%. Micron's revenue rose by approximately 4.2% to US$3.075 billion—despite a slight drop in ASP—supported by an upswing in demand and shipment volumes.

TrendForce's latest research into the HBM market indicates that NVIDIA plans to diversify its HBM suppliers for more robust and efficient supply chain management. Samsung's HBM3 (24 GB) is anticipated to complete verification with NVIDIA by December this year. The progress of HBM3e, as outlined in the timeline below, shows that Micron provided its 8hi (24 GB) samples to NVIDIA by the end of July, SK hynix in mid-August, and Samsung in early October.

Given the intricacy of the HBM verification process—estimated to take two quarters—TrendForce expects that some manufacturers might learn preliminary HBM3e results by the end of 2023. However, it's generally anticipated that major manufacturers will have definite results by 1Q24. Notably, the outcomes will influence NVIDIA's procurement decisions for 2024, as final evaluations are still underway.

Micron Technology, Inc. (Nasdaq: MU), today demonstrated its industry leadership by announcing its 32Gb monolithic die-based 128 GB DDR5 RDIMM memory featuring best-in-class performance of up to 8000 MT/s to support data center workloads today and into the future. These high-capacity, high-speed memory modules are engineered to meet the performance and data-handling needs of a wide range of mission-critical applications in data center and cloud environments, including artificial intelligence (AI), in-memory databases (IMDBs) and efficient processing for multithreaded, multicore count general compute workloads.

Powered by Micron's industry-leading 1β (1-beta) technology, the 32Gb DDR5 DRAM die-based 128 GB DDR5 RDIMM memory delivers the following enhancements over competitive 3DS through-silicon via (TSV) products:

• more than 45% improved bit density
• up to 24% improved energy efficiency
• up to 16% lower latency
• up to a 28% improvement in AI training performance

Micron Technology, Inc. (Nasdaq: MU), today announced the availability of the Crucial T500 Gen 4 NVMe SSD as an expansion of its award-winning NVMe solid-state drive (SSD) portfolio. The Crucial T500 SSD is a best-in-class PCIe 4.0 NVMe drive, which leverages Micron's advanced 232-layer 3D NAND technology with industry-leading NAND I/O speeds of 2.4 gigabytes per second (GB/s) and is engineered to improve performance for console and PC gamers, photo and video editors and content creators. Available in two options, the T500 SSD with the heatsink is specifically designed for platforms like the PlayStation 5 (PS5) and PC gaming rigs, while the version without the heatsink fits well in laptops, desktops and workstations.

The T500 offers up to a 40% higher performance-to-power ratio, and speeds that are two times faster than the previous Gen 3 NVMe SSD offering. With lightning-fast sequential read and write speeds up to 7,400 MB/s and 7,000 MB/s respectively, Crucial T500 SSDs enable gamers to load games up to 16% faster, get quicker game texture renders and reduced CPU utilization with Microsoft DirectStorage. Likewise, it is easy to install and has up to 2 TB of storage - making it perfect for PS5 upgrades or UHD/8K+ videos. The T500 also delivers up to 42% faster performance in content creation applications, allowing users to run heavy workloads and render photos or videos faster.

Micron Technology, Inc., announced today that it is now shipping production samples of its low-power double data rate 5X (LPDDR5X) memory - the industry's only 1β (1-beta) mobile-optimized memory - for use with Qualcomm Technologies, Inc.'s latest flagship mobile platform, Snapdragon 8 Gen 3. Running at the world's fastest speed grade of 9.6 gigabits per second (Gbps), Micron LPDDR5X provides the mobile ecosystem with the fast performance needed to unlock generative artificial intelligence (AI) at the edge. Enabled by its innovative, industry-leading 1β process node technology, Micron LPDDR5X also delivers advanced power-saving capabilities for mobile users.

"Generative AI is poised to unleash unprecedented productivity, ease of use, and personalization for smartphone users by delivering the power of large language models to flagship mobile phones," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Micron's 1β LPDDR5X combined with Qualcomm Technologies' AI-optimized Snapdragon 8 Gen 3 Mobile Platform empowers smartphone manufacturers with the next-generation performance and power efficiency essential to enabling revolutionary AI technology at the edge."