Tuesday, August 25th 2009

TSMC Achieves 28 nm SRAM Yield Breakthrough

Taiwan Semiconductor Manufacturing Company, Ltd. has become the first foundry not only to achieve 28 nm functional 64 Mb SRAM yield, but also to achieve it across all three 28 nm nodes.

“Achieving 64 Mb SRAM yield across all three 28 nm process nodes is striking. It is particularly noteworthy because this achievement demonstrates the manufacturing benefits of the gate-last approach that we developed for the two TSMC 28 nm high-k metal gate processes,” explained Dr. Jack Sun, vice president, Research and Development at TSMC.

“This accomplishment underscores TSMC’s process technology capability and value in 28 nm. It shows TSMC is not only able to extend conventional SiON technology to 28 nm, but is also able to deliver the right 28 nm HKMG technology at the same time,” explained Dr. Mark Liu, senior vice president, Advanced Technology Business at TSMC.

The TSMC 28nm development and ramp-up has remained on track since the announcement made in September of 2008. The 28LP process is expected to enter risk production at the end of Q1 of 2010, followed closely by the 28HP risk production at the end of Q2 and the 28HPL risk production in Q3.

The 28nm LP process will serve as a fast time-to-market and low cost technology ideal for cellular and mobile applications. The 28nm HP process is expected to support devices such as CPUs, GPUs, Chipsets, FPGAs, networking, video game consoles, and mobile computing applications that are performance demanding. The 28nm HPL process features low power, low leakage, and medium-high performance. It is aimed to support applications such as cell phone, smart netbook, wireless communication and portable consumer electronics that demand low leakage.

All 28nm TSMC processes feature a comprehensive design infrastructure based on the company’s Open Innovation Platform to extend the power of the technology to a broad range of differentiating products.Source: TSMC
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10 Comments on TSMC Achieves 28 nm SRAM Yield Breakthrough

#1
AltecV1
tcmc should get there 40nm fixed and then they can work on there new s...!
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#2
largon
[quote="TSMC]Achieving 64 Mb SRAM yield across all three 28 nm process nodes is striking.[/quote]Interesting wording. They "achieved yield", as in not all chips are broken.
:D
[QUOTE=AltecV1, post: 1527205"]tcmc should get there 40nm fixed and then they can work on there new s...![/quote]I doubt TSMC 40nm is nearly as troubled now as it was around HD4770's launch.
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#3
F2K
They announced that 40nm yield has improved to 60%.
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#4
WarEagleAU
Bird of Prey
I agree, work on ironing out the 40nm before going lower, though I am happy they were able to hit such a low.
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#5
Fx
sometimes you will have better luck with new processes initially, ie... AMD's 45nm vs 65nm
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#6
laszlo
just wonder when they reach the lowest nm what after?....
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#7
AltecV1
by: Fx
sometimes you will have better luck with new processes initially, ie... AMD's 45nm vs 65nm
oh no:eek: now you pissed Derrick R. Meyer off! he will come any minute to your house and will F.ck you up man:roll:
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#8
Fx
I'll just show him my x4 955 then give him your addy cause you are rollin' with Intel :p
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#9
AltecV1
*cough* snitch *cough*:pimp:
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#10
1c3d0g
by: F2K
They announced that 40nm yield has improved to 60%.
If this is accurate, 60% is still an awful figure to reach for what is supposed to be such a mature and well-tested node. Thing is, they've f*cked up the 40nm node and they just won't admit it. Instead they're bragging about some far-away node process in which they can't even MASS-produce relatively simple chips. F*ck TSMC. I hope GlobalFoundries crushes them in their own game so they can start innovating again instead of feeding everyone a half-baked, half-assed node process.
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