Monday, February 9th 2009

Hynix 40nm 1Gb DDR3 DRAM Chip to Enter Production in 3Q'09

Hynix forms one of the top-tier DRAM manufacturers. On Sunday, the company made it official that its new 1 Gb (128 MB) DDR3 memory chip built on the new 40 nm silicon fabrication process, will enter mass production by the third quarter, and be available to manufacturers soon after. The chip (model: H5TQ1G83CFR) operates with a top-speed of 2,133 Mbps, at a wide range of voltage.

Using the three-dimensional transistor technology, the company has stepped-up productivity by more than 50% over its current DRAM chips built on the 50 nm process. The new technology is said to minimize electric leakages and reduces overall power consumption of the DRAM chip. The new 1Gb memory chip meets Intel's DDR3 DRAM specification compliance and the memory module will be examined for certification by Intel.

Source: DigiTimes
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7 Comments on Hynix 40nm 1Gb DDR3 DRAM Chip to Enter Production in 3Q'09

#1
Castiel
Wow that is amazing. Technology is speeding up when the country is down.:nutkick:
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#2
kid41212003
Wow, that's mean I need to sell my kits asap before the price is crashing down to $50 (from $220) :laugh:.
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#3
Binge
Overclocking Surrealism
lol It means we'll see a whole new monster with i7. Prepare to see those Dominator Reds drop to reasonable prices.
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#4
zithe
At first I misread. I thought they made a 1GB individual chip. In other words, an 8GB DDR3 40NM stick.
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#5
Fhgwghads
by: zithe
At first I misread. I thought they made a 1GB individual chip. In other words, an 8GB DDR3 40NM stick.
Same, the picture was a little misleading, got my hopes up :(
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#7
PCpraiser100
Work harder!!!! We want those chips!!!! If they are fairly cheap, we could finally get 4GB modules for everyone! Then on the other hand, I'm still enjoying my 2GB ones.
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