Monday, April 6th 2009
A quick and brief report on Innovation@Intel claims that the company's engineers have discovered a way to make transistors using new silicon substrate and thus reduce the heat and voltage output of future processors. The new transistors run far cooler - at about ½ the voltage, consuming only 1/10th the power of today's transistors.
Intel recently disclosed advancement details on a P-channel transistor, built on a silicon substrate, that makes use of compound semiconductors, also known as III-V materials because they are made of elements that straddle silicon in the periodic table, silicon being in column IV. This research resulted in the highest performing P-channel transistors reported to date. A year earlier, Intel described III-V N-channel transistors, also built on a silicon substrate. When combined, these two results could form the building blocks for CMOS logic circuits, which use both N-channel and P-channel transistors. Potentially suitable for future microprocessors, they run far cooler - at about ½ the voltage, consuming only 1/10th the power of today's transistors.Source: Intel