Samsung Electronics Comes With 2.0GHz GDDR3 Memory

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Samsung Electronics has announced that it had created the world’s first GDDR3 memory chip capable of working at 2.0GHz effective clock-speed. Samsung’s GDDR3 memory rated to run at 2.0GHz features 512Mb density and was made using 90nm process technology. The new GDDR3 incorporates a JEDEC standard 136-ball package. Samsung did not reveal when such device is to be available, but indicated that it had initiated mass production of its 1.60GHz 512Mb GDDR3, which was developed in December 2004. Samsung also said its GDDR3 memory will be featured in next-generation game consoles, but did not elaborate whether in Microsoft Xbox 360, Nintendo Revolution or Sony PlayStation 3.

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