SanDisk Corporation, a global leader in flash memory storage solutions, today announced that the construction of the phase two shell of the Fab 5 joint venture wafer fabrication facility located in Yokkaichi, Japan, will begin in August 2013 with expected completion in mid-2014. SanDisk expects to use phase two of Fab 5 primarily for technology transitions of existing Yokkaichi wafer capacity. The new cleanroom will provide the space needed for additional equipment required for transitioning the wafer capacity in Fab 3, Fab 4 and phase one of Fab 5, to next generation 2D NAND technologies and to early generations of 3D NAND technology. The Fab 5 plans are consistent with the company's strategy outlined during SanDisk's Investor Day May 8 and there are no changes to SanDisk's capital expenditure plans. Fab 5 will have an earthquake absorbing structure and is designed to minimize environmental impact. Extensive use of LED lighting throughout the facility and up-to-date energy-saving production facilities, along with full and effective use of waste heat, are expected to reduce CO2 emissions to a level 13 percent lower than for Fab 4.