SanDisk Corporation, a global leader in flash memory storage solutions, today announced it is using the world's most advanced semiconductor manufacturing process to produce SanDisk's highest performing embedded memory products.

iNAND Extreme is now being built on SanDisk's 19 nanometer (nm)* process technology to enable the large-capacity, high-performance embedded NAND flash memory products that are ideally suited for high-end tablets and smartphones. Products running the Android operating system as well as the upcoming Microsoft Windows RT version of the Windows 8 operating system can benefit from iNAND Extreme capacity, performance and small size.

Toshiba announced the first SSDs based on its swanky new 19 nm-class NAND flash memory. These include four models in the 2.5-inch 9.5 mm-thick form-factor (standard), another four models in the 2.5-inch 7 mm-thick form-factor (slim, for Ultrabooks); and three models in the super-compact mSATA form-factor. The 9.5 mm-thick and 7 mm-thick 2.5-inch models differ only with their thickness, and are otherwise identical, since SSDs are essentially just printed circuit boards with NAND flash memory, controllers, caches, and ancillary components soldered onto them.

The 9.5 mm-thick 2.5-inch models carry the model number scheme THNSNFxxxGBSS (xxx = number of GB capacity), while the 7 mm-thick 2.5-inch models use THNSNFxxxGCSS. Both lines are available in 64 GB, 128 GB, 256 GB, and 512 GB capacities. The 128, 256, and 512 GB models offer transfer rates as high as 524 MB/s, while the 64 GB model offers up to 440 MB/s. Toshiba implemented a new controller that features next-generation Deterministic Zeroing TRIM (a feature exclusive with Windows 8 and future *nix kernels), Quadruple Swing-by Code (QSBC), a performance-optimized ECC-equivalent, and a read-only mode. The mSATA models (model number scheme THNSNFxxxGMCS) offer similar performance to their 2.5-inch cousins, but are available in only three capacity options, 64 GB, 128 GB, and 256 GB. Toshiba will release its new line of SSDs in August.

SanDisk Corporation, a global leader in flash memory storage solutions, today announced it has developed the world's smallest 128 gigabit (Gb) NAND flash memory chip currently in production. The semiconductor device can store 128 billion individual bits of information on a single silicon die 170 mm2 in size - a little more than a quarter of an inch squared, or smaller than the area covered by a U.S. penny.

The use of NAND flash memory in high tech equipment like smartphones, tablets and solid state drives (SSDs) allows advances in the full function, small form factor devices that are highly valued by consumers. Shrinking the size of NAND flash memory allows smaller, more powerful computing, communications and consumer electronics devices to be built while keeping costs low.

SanDisk Corporation, a global leader in flash memory storage solutions, today announced that the iNAND Ultra line of products will be the first of its embedded flash memory products to move to 19 nanometer (nm) manufacturing technology, the industry's most advanced chip making process.

Toshiba Corporation, reinforcing its leadership in the development and fabrication of cutting-edge, high density NAND flash memories, today announced that it has fabricated NAND flash memories with 19 nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell 64-gigabit (Gb) chips that are the world's smallest and offer the highest density on a single chip (8 gigabytes (GB)). Toshiba will also add 3-bit-per-cell products fabricated with the 19nm process technology to its product line-up.

Samples of 2-bit-per-cell 64-gigabit will be available from the end of this month with mass production scheduled for the third quarter of the year (July to September 2011). Toshiba leads the industry in fabricating high density, small die size NAND flash memory chips. Application of the 19nm generation process technology will further shrink chip size, allowing Toshiba to assemble sixteen 64Gbit NAND flash memory chips in one package and to deliver 128GB devices for application in smartphones and tablet PCs. The 19nm process products are also equipped with Toggle DDR2.0, which enhances data transfer speed.