Micron Technology, Inc., one of the world's largest semiconductor companies and the only U.S.-based manufacturer of memory, and the Biden-Harris Administration today announced that they have signed a non-binding Preliminary Memorandum of Terms (PMT) for $6.1 billion in funding under the CHIPS and Science Act to support planned leading-edge memory manufacturing in Idaho and New York.

The CHIPS and Science Act grants of $6.1 billion will support Micron's plans to invest approximately $50 billion in gross capex for U.S. domestic leading-edge memory manufacturing through 2030. These grants and additional state and local incentives will support the construction of one leading-edge memory manufacturing fab to be co-located with the company's existing leading-edge R&D facility in Boise, Idaho and the construction of two leading-edge memory fabs in Clay, New York.

Micron Technology, Inc., today demonstrated its continued NAND technology leadership by announcing that its 232-layer QLC NAND is now in mass production and shipping in select Crucial SSDs, in volume production to enterprise storage customers and sampling to OEM PC manufacturers in the Micron 2500 NMVe SSD.

Micron 232-layer QLC NAND delivers unparalleled performance for use cases across mobile, client, edge and data center storage by leveraging these important capabilities:

• Industry-leading bit-density, up to 28% more compact than leading competitors'1 latest products
• Industry-leading NAND I/O speeds of 2400 MT/s, a 50% improvement over the prior generation
• 24% better read performance over the prior generation
• 31% better programming performance over the prior generation

Following in the wake of an earthquake that struck on April 3rd, TrendForce undertook an in-depth analysis of its effects on the DRAM industry, uncovering a sector that has shown remarkable resilience and faced minimal interruptions. Despite some damage and the necessity for inspections or disposal of wafers among suppliers, the facilities' strong earthquake preparedness of the facilities has kept the overall impact to a minimum.

Leading DRAM producers, including Micron, Nanya, PSMC, and Winbond had all returned to full operational status by April 8th. In particular, Micron's progression to cutting-edge processes—specifically the 1alpha and 1beta nm technologies—is anticipated to significantly alter the landscape of DRAM bit production. In contrast, other Taiwanese DRAM manufacturers are still working with 38 and 25 nm processes, contributing less to total output. TrendForce estimates that the earthquake's effect on DRAM production for the second quarter will be limited to a manageable 1%.

Micron Technology, Inc., today announced it is sampling the automotive-grade Micron 4150AT SSD, the world's first quad-port SSD, capable of interfacing with up to four systems on chips (SoCs) to centralize storage for software-defined intelligent vehicles. The Micron 4150AT SSD combines market-leading features such as single-root input/output virtualization (SR-IOV), a PCIe Generation 4 interface and ruggedized automotive design. With these features, the automotive-grade SSD provides the ecosystem with data center-level flexibility and power.

"As storage requirements race to keep up with rich in-vehicle experiences featuring AI and advanced algorithms for higher levels of autonomous safety, this era demands a new paradigm for automotive storage to match," said Michael Basca, Micron vice president of embedded products and systems. "Building on our collaboration with the innovators redefining next-generation automotive architectures, Micron has reimagined storage from the ground up to deliver the world's first quad-port SSD - the Micron 4150AT - which provides the industry flexibility and horsepower to roll out the transformative technologies on the horizon."

Micron Technology, Inc. (Nasdaq: MU) today reported that following the earthquake that struck Taiwan on April 3, 2024, all of Micron's team members have been accounted for and reported to be safe. Our thoughts are with those affected and their families. We are evaluating impact to our operations and supply chain. We will communicate changes to delivery commitments to our customers after this evaluation is completed.

Micron Technology, Inc. today announced results for its second quarter of fiscal 2024, which ended February 29, 2024.

Fiscal Q2 2024 highlights

• Revenue of $5.82 billion versus $4.73 billion for the prior quarter and $3.69 billion for the same period last year
• GAAP net income of $793 million, or $0.71 per diluted share
• Non-GAAP net income of $476 million, or $0.42 per diluted share
• Operating cash flow of $1.22 billion versus $1.40 billion for the prior quarter and $343 million for the same period last year

"Micron delivered fiscal Q2 results with revenue, gross margin and EPS well above the high-end of our guidance range - a testament to our team's excellent execution on pricing, products and operations," said Sanjay Mehrotra, President and CEO of Micron Technology. "Our preeminent product portfolio positions us well to deliver a strong fiscal second half of 2024. We believe Micron is one of the biggest beneficiaries in the semiconductor industry of the multi-year opportunity enabled by AI."

TrendForce reports that anticipation of NAND Flash price hikes into Q2 has motivated certain suppliers to minimize losses and lower costs in hopes of returning to profitability this year. Kioxia and WD led the charge from March, boosting their capacity utilization rates to nearly 90%—a move not widely adopted by their competitors.

TrendForce points out that to meet the demand surge in the second half of the year, especially given Kioxia and Western Digital's currently low inventory, the production increase is mainly targeting 112-layer and select 2D products. This strategy is expected not only to secure profitability within the year but also to contribute to a projected 10.9% rise in the annual NAND Flash industry supply bit growth rate for 2024.

MemVerge, a leader in AI-first Big Memory Software, has joined forces with Micron to unveil a groundbreaking solution that leverages intelligent tiering of CXL memory, boosting the performance of large language models (LLMs) by offloading from GPU HBM to CXL memory. This innovative collaboration is being showcased in Micron booth #1030 at GTC, where attendees can witness firsthand the transformative impact of tiered memory on AI workloads.

Charles Fan, CEO and Co-founder of MemVerge, emphasized the critical importance of overcoming the bottleneck of HBM capacity. "Scaling LLM performance cost-effectively means keeping the GPUs fed with data," stated Fan. "Our demo at GTC demonstrates that pools of tiered memory not only drive performance higher but also maximize the utilization of precious GPU resources."

With the effective reduction of production by suppliers, the price of memory is rebounding, and the semiconductor memory market finally shows signs of recovery. From the perspective of market dynamics and demand changes, NAND Flash, as one of the two major memory products, is experiencing a new round of changes. Since 3Q23, NAND Flash chip prices have been on the rise for several consecutive months. TrendForce believes that, under the precondition of a conservative market demand prospect for 2024, chip price trends will depend on suppliers' production capacity utilization.

There have been frequent developments in the NAND flash memory industry chain, with some manufacturers indicating a willingness to raise prices or increase production capacity utilization. Wallace C. Kou, General Manager of NAND Flash Supplier SIMO, stated that prices for the second quarter of NAND Flash have already been settled down, which will increase by 20%; some suppliers have started to make profits in the first quarter, and most suppliers will earn money after the second quarter.

SK Hynix believes that it leads the industry with the development and production of High Bandwidth Memory (HBM) solutions, but rival memory manufacturers are working hard on equivalent fifth generation packages. NVIDIA was expected to select SK Hynix as the main supplier of HBM3E parts for utilization on H200 "Hopper" AI GPUs, but a surprise announcement was issued by Micron's press team last month. The American firm revealed that HBM3E volume production had commenced: ""(our) 24 GB 8H HBM3E will be part of NVIDIA H200 Tensor Core GPUs, which will begin shipping in the second calendar quarter of 2024. This milestone positions Micron at the forefront of the industry, empowering artificial intelligence (AI) solutions with HBM3E's industry-leading performance and energy efficiency."

According to a Korea JoongAng Daily report, this boast has reportedly "shocked" the likes of SK Hynix and Samsung Electronics. They believe that Micron's: "announcement was a revolt from an underdog, as the US company barely held 10 percent of the global market last year." The article also points out some behind-the-scenes legal wrangling: "the cutthroat competition became more evident when the Seoul court sided with SK Hynix on Thursday (March 7) by granting a non-compete injunction to prevent its former researcher, who specialized in HBM, from working at Micron. He would be fined 10 million won for each day in violation." SK Hynix is likely pinning its next-gen AI GPU hopes on a 12-layer DRAM stacked HBM3E product—industry insiders posit that evaluation samples were submitted to NVIDIA last month. The outlook for these units is said to be very positive—mass production could start as early as this month.

JEDEC is currently presiding over standards for 6th generation high bandwidth memory (AKA HBM4)—the 12 and 16-layer DRAM designs are expected to reach mass production status in 2026. According to a ZDNET South Korea report, involved manufacturers are deliberating over HBM4 package thicknesses—allegedly, decision makers have settled on 775 micrometers (μm). This is thicker than the previous generation's measurement of 720 micrometers (μm). Samsung Electronics, SK Hynix and Micron are exploring "hybrid bonding," a new packaging technology—where onboard chips and wafers are linked directly to each other. Hybrid bonding is expected to be quite expensive to implement, so memory makers are carefully considering whether HBM4 warrants its usage.

ZDNET believes that JEDEC's agreement—settling on 775 micrometers (μm) for 12-layer and 16-layer stacked HBM4—could have: "a significant impact on the future packaging investment trends of major memory manufacturers. These companies have been preparing a new packaging technology, hybrid bonding, keeping in mind the possibility that the package thickness of HBM4 will be limited to 720 micrometers. However, if the package thickness is adjusted to 775 micrometers, 16-layer DRAM stacking HBM4 can be sufficiently implemented using existing bonding technology." A revised schedule could delay the rollout of hybrid bonding—perhaps pushed back to coincide with a launch of seventh generation HBM. The report posits that Samsung Electronics, SK Hynix and Micron memory engineers are about to focus on the upgrading of existing bonding technologies.

Global tensions have caused big semiconductor manufacturers to consider a diversification of production facilities outside of China—most news headlines have concentrated on new operations or advancement/upgrades in the USA, India and Japan. As reported by the Financial Times, Malaysia has quietly established itself as a haven for big chip firms—a "free-trade zone" on the island of Penang is home to fancy Intel and Micron production operations. Team Blue's emerging next-gen Battlemage GPU was spotted during a summer 2023 press event—at the time, HardwareLuxx reported the existence of a "BMG G10" die in Intel Malaysia's Failure Lab. Micron celebrated its 45th anniversary last October, with the opening of a new cutting-edge assembly and test facility in Batu Kawan, Penang. The two firms—and a few others—established roots in Malaysia decades ago, but future investments are set to boost the nation's semiconductor industry.

According to Tom's Hardware: "Intel will spend a whopping $7 billion on new, Malaysian chip assembly and testing facilities. The overall total of foreign Malaysian investment in 2023 was $12.8 billion, and that exceeded its seven-year combined total from 2013 to 2020." Anwar Ibrahim, the country's Prime Minister, is keen to see manufacturing advance to a higher-value tier—a February FT.com interview reveals that this is a "critical goal" for his administration. The establishment of a front-end semiconductor manufacturing plant would be welcomed the most—Zafrul Aziz, Trade Minister of Malaysia, stated (to FT): "I am optimistic we will attract more than one. All it takes is one to kick-start a wave." Historically, Malaysian facilities have been created to deal with the back end of semiconductor supply chains—e.g. packing, assembling and testing components. Company leaderships consider these activities to be of lower value, due to their less complex nature. Certain foreign investments, into Malaysian plants, have come from Chinese firms—a growing presence of PRC-owned plants could complicate matters. The Financial Times article presents a possible future scenario, with the US Government stepping in...if alarmed to a certain degree.

TrendForce highlights the current landscape of the HBM market, which as of early 2024, is primarily focused on HBM3. NVIDIA's upcoming B100 or H200 models will incorporate advanced HBM3e, signaling the next step in memory technology. The challenge, however, is the supply bottleneck caused by both CoWoS packaging constraints and the inherently long production cycle of HBM—extending the timeline from wafer initiation to the final product beyond two quarters.

The current HBM3 supply for NVIDIA's H100 solution is primarily met by SK hynix, leading to a supply shortfall in meeting burgeoning AI market demands. Samsung's entry into NVIDIA's supply chain with its 1Znm HBM3 products in late 2023, though initially minor, signifies its breakthrough in this segment.

A Crucial "CT12G56C46S5" Non-ECC Small Outline Dual In-line Memory Module (SODIMM) is available to pre-order from Amazon UK—the 12 GB capacity product was spotted by everyone's favorite PC hardware sleuth;—momomo_us. March 31 appears to be the official shipping out date—current pricing is £44.99 ($57.50). Additionally, customers have the option to reserve a related 24 GB Kit (2x 12 GB) kit (CT2K12G56C46S5), priced at £87.99 (~$112.36). According to product descriptions, Crucial's upcoming laptop 5600 MHz RAM "can downclock if system specification only supports 5200 MHz or 4800 MHz."

"Non-binary modules" DDR5 modules hit retail last year—we have witnessed a slow trickle out of 24 GB and 48 GB capacity sticks, granting unusual memory configurations on compatible AMD and Intel platforms. The CT12G56C46S5 and CT2K12G56C46S5 are supported by "Core 13th Gen and Ryzen 6000 Series laptop CPUs and above." Crucial's latest DDR5 SODIMM could be the first 12 GB capacity model to reach retail, unless a rival manufacturer sneaks out an equivalent item prior to March 31.

Micron Technology, Inc., an industry leader in innovative memory and storage solutions, today announced the appointment of Robert (Bob) Swan to its board of directors. A recognized leader with a distinguished career in the semiconductor, technology and industrial sectors, Swan currently serves as an operating partner at Andreessen Horowitz, where he advises growth-stage portfolio companies.

Swan's extensive background includes his tenure as CFO and later CEO of Intel Corporation, where he oversaw 110,000 employees and $78 B in annual sales. Prior to joining Intel, as CFO of eBay, Swan played a significant role in driving the company's global expansion strategy. Swan also held notable roles as CFO at Electronic Data Systems Corp., TRW Inc., and Webvan Group, Inc., where he additionally served as COO and CEO.

According to TPU's SSD database, the Microsoft Z1000 M.2 22110 form factor solid-state drive launched back in 2020—last week, well-known hardware tipster, yuuki_ans, leaked a set of photos and specifications. Their March 7 social media post showcases close-ups of a potential enterprise product—sporting a CNEX Labs CNX-2670AA-CB2T controller, Toshiba BiCS4 96-layer eTLC NAND flash dies and 1 GB Micron MT40A1G8SA-075:E DDR4 RAM cache. The mysterious storage device appears to be an engineering sample (PV1.1)—an attached label lists a possible manufacturing date of May 18, 2020, but its part number and serial code are redacted in yuuki's set of photos. PCIe specifications are not disclosed, but experts reckon that a 4.0 standard is present here (given the prototype's age).

The long form factor and presence of a CNEX Labs controller suggest that Microsoft has readied a 960 GB capacity model for usage in data servers. Unoccupied spaces on the board provide evidence of different configurations. Extra BGA mounting points could introduce another DRAM chip, and there is enough room for additional capacitors—via solder pads on both sides of the Z1000's PCB. It is speculated that 2 TB and 4 TB variants exist alongside the leaked 960 GB example—a "broad portfolio" of finalized Z1000 products could be in service right now, but the wider public is unlikely to see these items outside of Microsoft facilities.

The third quarter of 2023 witnessed suppliers dramatically cutting production, which underpinned enterprise SSD prices. The fourth quarter saw a resurgence in contract prices, driven by robust buying activity and heightened demand from server brands and buoyed by optimistic capital expenditure forecasts for 2024. This, combined with increased demand from various end products entering their peak sales period and ongoing reductions in OEM NAND Flash inventories, resulted in some capacity shortages. Consequently, fourth-quarter enterprise SSD prices surged by over 15%. TrendForce highlights that this surge in demand and prices led to a 47.6% QoQ increase in enterprise SSD industry revenues in 4Q23, reaching approximately $23.1 billion.

The stage is set for continued fervor as we settle into the new year and momentum from server brand orders continues to heat up—particularly from Chinese clients. On the supply side, falling inventory levels and efforts to exit loss-making positions have prompted enterprise SSD prices to climb, with contract prices expected to increase by over 25%. This is anticipated to fuel a 20% revenue growth in Q1.

TrendForce reports a substantial 24.5% QoQ increase in NAND Flash industry revenue, hitting US$11.49 billion in 4Q23. This surge is attributed to a stabilization in end-demand spurred by year-end promotions, along with an expansion in component market orders driven by price chasing, leading to robust bit shipments compared to the same period last year. Additionally, the corporate sector's continued positive outlook for 2024 demand—compared to 2023—and strategic stockpiling have further fueled this growth.

Looking ahead to 1Q24, despite it traditionally being an off-season, the NAND Flash industry is expected to see a continued increase in revenue by another 20%. This anticipation is underpinned by significant improvements in supply chain inventory levels and ongoing price rises, with clients ramping up their orders to sidestep potential supply shortages and escalating costs. The ongoing expansion of order sizes is expected to drive NAND Flash contract prices up by an average of 25%.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, is pleased to announce the publication of JESD239 Graphics Double Data Rate (GDDR7) SGRAM. This groundbreaking new memory standard is available for free download from the JEDEC website. JESD239 GDDR7 offers double the bandwidth over GDDR6, reaching up to 192 GB/s per device, and is poised to meet the escalating demand for more memory bandwidth in graphics, gaming, compute, networking and AI applications.

JESD239 GDDR7 is the first JEDEC standard DRAM to use the Pulse Amplitude Modulation (PAM) interface for high frequency operations. Its PAM3 interface improves the signal to noise ratio (SNR) for high frequency operation while enhancing energy efficiency. By using 3 levels (+1, 0, -1) to transmit 3 bits over 2-cycles versus the traditional NRZ (non-return-to-zero) interface transmitting 2 bits over 2-cycles, PAM3 offers higher data transmission rate per cycle resulting in improved performance.

TrendForce reports a 29.6% QoQ in DRAM industry revenue for 4Q23, reaching US$17.46 billion, propelled by revitalized stockpiling efforts and strategic production control by leading manufacturers. Looking ahead to 1Q24, the intent to further enhance profitability is evident, with a projected near 20% increase in DRAM contract prices—albeit with a slight decrease in shipment volumes to the traditional off-season.

Samsung led the pack with the highest revenue growth among the top manufacturers in Q4 as it jumped 50% QoQ to hit $7.95 billion, largely due to a surge in 1alpha nm DDR5 shipments, boosting server DRAM shipments by over 60%. SK hynix saw a modest 1-3% rise in shipment volumes but benefited from the pricing advantage of HBM and DDR5, especially from high-density server DRAM modules, leading to a 17-19% increase in ASP and a 20.2% rise in revenue to $5.56 billion. Micron witnessed growth in both volume and price, with a 4-6% increase in each, resulting in a more moderate revenue growth of 8.9%, totaling $3.35 billion for the quarter due to its comparatively lower share of DDR5 and HBM.

Micron Technology, Inc. announced today that it is delivering qualification samples of an enhanced version of its Universal Flash Storage (UFS) 4.0 mobile solution with breakthrough proprietary firmware features delivered in the world's most compact UFS package at 9x13 millimeters (mm). Built on its advanced 232-layer 3D NAND and offering up to 1 terabyte (TB) capacity, the UFS 4.0 solution provides best-in-class performance and end-to-end innovation, enabling faster and more responsive experiences on flagship smartphones.

Micron UFS 4.0 accelerates data-intensive experiences with up to 4300 megabytes per second (MBps) sequential read and 4000 MBps sequential write speed, twice the performance of previous generations. With these speeds, users will be able to launch their favorite productivity, creativity, and emerging AI apps more quickly. Large language models in generative AI applications can be loaded 40% faster, resulting in a smoother experience when initializing conversations with AI digital companions.

Sabrent today announced its latest flagship M.2 NVMe SSD series, the Rocket 5. Built in the M.2-2280 form-factor, the Sabrent Rocket 5 is sold as a bare drive, with an included fan-heatsink that you install if needed. This cooler comes with a tiny fins-stack, two copper heat pipes, and a 20 mm fan. At the heart of the drive is the new Phison PS5026-E26 Max14um controller, paired with Micron B58R 232-layer 3D TLC NAND flash memory, and LPDDR4 based DRAM cache. The drive comes in 1 TB, 2 TB, and 4 TB capacity variants.

The company didn't put out capacity-specific performance or endurance numbers, but mentioned sequential read speeds of up to 14 GB/s, as is characteristic of the Max14um controller variant; up to 12 GB/s sequential write speeds, up to 1.55 million IOPS 4K random reads, with up to 1.8 million IOPS 4K random writes. The Rocket 5 replaces the Rocket 4 Plus as Sabrent's flagship SSD. The 4 TB variant is listed at $730, the 2 TB variant at $340, and the 1 TB variant at $190.

Micron Technology, Inc. (Nasdaq: MU), a global leader in memory and storage solutions, today announced it has begun volume production of its HBM3E (High Bandwidth Memory 3E) solution. Micron's 24 GB 8H HBM3E will be part of NVIDIA H200 Tensor Core GPUs, which will begin shipping in the second calendar quarter of 2024. This milestone positions Micron at the forefront of the industry, empowering artificial intelligence (AI) solutions with HBM3E's industry-leading performance and energy efficiency. As the demand for AI continues to surge, the need for memory solutions to keep pace with expanded workloads is critical.

Micron's HBM3E solution addresses this challenge head-on with:

• Superior Performance: With pin speed greater than 9.2 gigabits per second (Gb/s), Micron's HBM3E delivers more than 1.2 terabytes per second (TB/s) of memory bandwidth, enabling lightning-fast data access for AI accelerators, supercomputers, and data centers.
• Exceptional Efficiency: Micron's HBM3E leads the industry with ~30% lower power consumption compared to competitive offerings. To support increasing demand and usage of AI, HBM3E offers maximum throughput with the lowest levels of power consumption to improve important data center operational expense metrics.
• Seamless Scalability: With 24 GB of capacity today, Micron's HBM3E allows data centers to seamlessly scale their AI applications. Whether for training massive neural networks or accelerating inferencing tasks, Micron's solution provides the necessary memory bandwidth.

Micron Technology, Inc., today announced two new Crucial Pro Series products with the addition of overclocking-capable memory and the world's fastest Gen 5 SSD. The Crucial DDR5 Pro Memory: Overclocking Edition modules are available in 16 GB densities up to DDR5-6000 to deliver higher performance, lower latencies and better bandwidth to fuel gaming wins and reduce performance bottlenecks. These powerful DDR5 overclocking DRAM modules are compatible with the latest DDR5 Intel and AMD CPUs and support both Intel XMP 3.0 and AMD EXPO specifications on every module, eliminating compatibility hassles. Built with leading-edge Micron 232-layer TLC NAND, the Crucial T705 SSD unleashes the full potential of Gen 5 performance.

Lightning-fast sequential reads and writes up to 14,500 MB/s and 12,700 MB/s (up to 1,550K/1,800K IOPS random reads and writes) respectively, enable faster gaming, video editing, 3D rendering and heavy workload AI application processing. With DDR5 Pro Overclocking DRAM and the T705 SSD, enthusiasts, gamers and professionals can harness the speed, bandwidth and performance they need for AI-ready PC builds capable of processing, rendering and storing large volumes of AI generated content.

Crucial launched its Crucial T700 Gen 5 SSD family midway through last year—a "marquee product" within their (at the time) new Pro Series family—thanks to industry-leading performance. Micron's consumer brand boasted about the T700's technical prowess: "sequential read/write speeds (of) up to 12,400 MB/s and 11,800 MB/s respectively." The Micron 232-layer TLC NAND-equipped SSD range was leaked two months ahead of an eventual May 2023 launch, and history is seemingly repeating itself with a semi-related product in early 2024. Hardware sleuth, momomo_us, has uncovered Crucial T705 and T705 Limited Edition models—the latter appears to be outfitted with a special white variation of the company's "SSD5" corrugated passive heatsink design (as seen in W1zzard's T700 review). Crucial's "SSD3" model suffix indicates a barebones package—minus the chunky "premium" aluminium and nickel-plated copper heatsink.

An alleged T705 specification sheet was leaked to social media over the past weekend—courtesy of Deepbluen's response to the initial momomo_us post. Crucial seems to be targeting industry leading performance once more—their 2 TB T705 model leads the pack with 14,500 MB/s read and 12,700 MB/s write speeds. The capacity range topper (4 TB) trails a little bit behind at 14,100 MB/s read and 12,400 MB/s (respectively), with the 1 TB model exhibiting a relatively sluggish 13,600 MB/s read and 10,200 MB/s (respectively). The leaked sheet does not contain any details regarding Crucial's choice of controller, as well as DRAM cache numbers and endurance figures. We see a repeat of the T700's Micron 232-layer TLC NAND, but we will have to wait a little longer to find out whether Phison's E26 controller is making a comeback (with entailing potential technical issues).