Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market.

"We are excited to deliver the industry's first 9th-gen V-NAND, which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product," said SungHoi Hur, Head of Flash Product & Technology at Samsung Electronics. "Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid state drive (SSD) market that meets the needs for the coming AI generation."

Samsung is preparing to launch its 9th Generation V-NAND (3D NAND flash) memory next month, Korean publication Hankyung reports. The 9th Gen 3D NAND flash memory by Samsung is expected to offer 290 layers, a step-up from the 236-layer 8th Gen V-NAND that the company debuted in 2022. Samsung reportedly achieved the 290-layer vertical stacking density through improvements in its flash layer stacking techniques that relies on increasing the layer counts through more memory holes in the flash layer. The cost here is data density per wafer, but a net gain from the increase in layer counts.

The same source behind the 9th Gen V-NAND story also reports that the company is targeting a rather early 2025 launch for its successor—the 10th Gen V-NAND. This is expected to be a mammoth 430-layer 3D NAND flash, a jump of 140 layers over the 9th Gen (which itself jumped by 54 layers over its predecessor). This would put Samsung back on track along with its competitors, Kioxia, SK Hynix, Micron Technology, and YMTC, as they gun for the ambitious goal of 1000-layer 3D NAND flash by 2030.Many Thanks to TumbleGeorge for the tip.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has started sampling its 256-gigabyte (GB) SD Express microSD card with sequential read speed of up to 800 megabytes per second (MB/s) and has commenced mass production of its 1-terabyte (TB) UHS-1 microSD card. With the introduction of its next-generation microSD card line-up, Samsung aims to provide differentiated memory solutions required for tomorrow's mobile computing and on-device AI applications.

"With our two new microSD cards, Samsung has provided effective solutions to address the growing demands of mobile computing and on-device AI," said Hangu Sohn, Vice President of the Memory Brand Product Biz Team at Samsung Electronics. "Despite their tiny size, these memory cards deliver powerful SSD-like performance and capacity to help users get more out of demanding modern and future applications."

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications—including the cloud, edge devices and automotive vehicles.

Attended by about 600 customers, partners and industry experts, the event served as a platform for Samsung executives to expand on the company's vision for "Memory Reimagined," covering long-term plans to continue its memory technology leadership, outlook on market trends and sustainability goals. The company also presented new product innovations such as the HBM3E Shinebolt, LPDDR5X CAMM2 and Detachable AutoSSD.

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today announced the release of a new 4-terabyte (TB) offering in its SSD 990 PRO series. The 990 PRO series is a lineup of high-performance PCIe 4.0 SSDs powered by Samsung's eighth-generation V-NAND (V8) technology and enhanced proprietary controller. Offering blazing-fast speeds and ultimate power efficiency, the 990 PRO series is optimized for massive data volumes, such as 3D/4K graphics work, data analytics and high-quality games, making it the ideal SSD for today's PCs, laptops, game consoles and computing systems. With improved total bytes written (TBW) ratings of up to 2,400 TB, the 990 PRO series ensures increased SSD reliability and longevity, ideal for those with highly demanding workloads and large storage capacity needs.

"Today's gamers and creative professionals require high-capacity, high-performance SSDs and Samsung's new 4 TB SSD 990 PRO is the perfect storage solution to meet their needs," said Hangu Sohn, Corporate Vice President of the Memory Brand Product Biz Team at Samsung Electronics. "As the demand for high-resolution content and ultra-fast data-processing speeds continues to grow, high-performance NVMe storage has become a core requirement."

It appears that Samsung is getting ready to beat SK Hynix in the race to 300 plus layers of NAND Flash, at least according to reports coming out of South Korea. The Seoul Economic Daily claims in an exclusive that Samsung will have a 300 plus layer V-NAND—(V for Vertical or 3D NAND—chip ready for production in 2024 and could as such beat SK Hynix by as much as a year, depending on how soon Samsung can deliver. Currently Samsung's most cutting edge stacked NAND is a 236-layer product, which is four more layers than Micron and YMTC, but two less than SK Hynix.

What sticks out in the Seoul Economic Daily news piece is that unlike SK Hynix, which is going for a triple stack sandwich, Samsung will apparently stick with two stacks. This means that Samsung is aiming for over 150-layers of NAND per stack, which seems like a big risk to take when it comes to yields. The taller the stacks, the bigger the chance of a failed stack, but maybe Samsung has found a solution around this potential issue. As modern 3D NAND relies on Through Silicon Vias, it's easier to manufacture denser stacks than in the past when wire bonding was used, but even so, this seems like a big risk for Samsung to take. That said, considering the current low demand and news of further cutbacks in production, it might be a good time for Samsung to utilise its fabs to test out this new, more densely stacked NAND to see if the company can mass produce it without issues. Samsung's roadmap calls for a 1000 plus layer V-NAND product by 2030, but it seems like the road there is still long and complicated.

Samsung Electronics today announced production readiness of a high-performance PCIe 4.0 NVMe SSD, the PM9C1a. Integrated with a new controller based on Samsung's cutting-edge 5-nanometer (nm) process and the company's seventh-generation V-NAND technology, the PM9C1a will provide elevated computing and gaming performance in PCs and laptops.

"Our new PM9C1a SSD will deliver a robust combination of superior performance, greater power efficiency and increased security, which are the qualities that matter most to PC users," said Yong Ho Song, Executive Vice President of Memory Solution Product & Development at Samsung Electronics. "We are committed to creating storage that satisfies the diverse and changing market requirements as we continue to advance innovation in the PC SSD space."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, as promised at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022, announced today that it has begun mass producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the industry's highest bit density. At 1 Tb, the new V-NAND also features the highest storage capacity to date, enabling larger storage space in next-generation enterprise server systems worldwide.

"As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down," said SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics. "Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations."

Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today showcased a series of cutting-edge semiconductor solutions set to drive digital transformation through the decade, at Samsung Tech Day 2022. An annual conference since 2017, the event returned to in-person attendance at the Signia by Hilton San Jose hotel after three years.

This year's event, attended by more than 800 customers and partners, featured presentations from Samsung's Memory and System LSI business leaders—including Jung-bae Lee, President and Head of Memory Business; Yong-In Park, President and Head of System LSI Business; and Jaeheon Jeong, Executive Vice President and Head of Device Solutions (DS) Americas Office—on the company's latest advancements and its vision for the future.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the 990 PRO, the company's high-performance NVMe SSD based on PCIe 4.0. Delivering lightning-fast speeds and superior power efficiency, the new SSD is optimized for graphically demanding games and other intensive tasks including 3D rendering, 4K video editing and data analysis.

"With continuing innovations in gaming, 4K and 8K technology as well as AI-driven applications, consumers' need for high-performance storage is growing exponentially," said KyuYoung Lee, Vice President of the Memory Brand Product Biz Team at Samsung Electronics. "The 990 PRO provides an optimal balance of speed, power efficiency and reliability, making it an ideal choice for avid gamers and creative professionals seeking uninterrupted work and play."

Samsung has announced the implementation of the latest JEDEC standard specification with the adoption of UFS (Universal Flash Storage) standard 4.0. The new standard offers a number of improvements over the previous UFS 3.1 specification related to either performance or power savings. The new standard increases speeds of up to 23.2 Gbps per lane, double that of the previous UFS 3.1 standard. Additionally, UFS 4.0 unlocks sequential read speeds as high as 6.0 MB/s per mA - a 46% improvement over the previous spec, promising decreased battery drain even as workload time is reduced.

Samsung's UFS 4.0 implementation will leverage the company's 7th Gen V-NAND alongside a proprietary controller, which should ultimately enable speeds of up to 4,200 MB/s. Sequential write speeds are nothing to scoff at either, promising up to 2,800 MB/s. The improved performance doesn't translate to increased package sizes, however, as UFS 4.0 will be distributed in compact packages with a maximum dimension of 11 mm x 13 mm x 1 mm for more effective space utilization and design convenience - with capacities reaching the 1 TB per package. Mass production is expected in 3Q2022. Samsung expects its new UFS 4.0-based products to deliver new experiences with increased data throughput of 5G smartphones, future automotive applications, and even AR and VR.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has developed the PM1743 SSD for enterprise servers, integrating the PCIe (Peripheral Component Interconnect Express) 5.0 interface with Samsung's advanced sixth-generation V-NAND.

"For over a decade, Samsung has been delivering SATA, SAS and PCIe-based SSDs that have been recognized for outstanding performance and reliability by leading enterprise server customers including corporations, governments and financial institutions," said Yong Ho Song, Executive Vice President and Head of the Memory Controller Development Team at Samsung Electronics. "The introduction of our PCIe 5.0 SSD, along with PCIe 6.0-based product developments that are underway, will further solidify our technological leadership in the enterprise server market."

Samsung Electronics today reported financial results for the second quarter ended June 30, 2021. Total consolidated revenue was KRW 63.67 trillion, a 20% increase from the previous year and a record for the second quarter. Operating profit increased 34% from the previous quarter to KRW 12.57 trillion as market conditions improved in the memory market, operations normalized at the Austin foundry fab, and as effective global supply chain management (SCM) helped maintain solid profitability for the finished product businesses.

The Semiconductor business saw a significant improvement in earnings as memory shipments exceeded previous guidance and price increases were higher than expected, while the Company strengthened its cost competitiveness. For the Display Panel Business, a one-off gain and an increase in overall prices boosted profits.

Samsung is preparing to deploy their latest innovations in NAND density with the next-generation V-NAND (7th gen). Samsung says it is preparing products that leverage both V-NAND's higher density (at 176 layers per chip versus up to 136 layers on 6th gen) with the throughput of both PCIe 4.0 and PCIe 5.0. This would of course mean higher density drives available, as well as a reduction in the overall $/GB equation. Due to Samsung's vertical integration (meaning that they are one of the few companies that can design and produce all SSD components in-house), the company is also developing next-gen NAND controllers that can leverage throughputs of 2,000 MT/s transfer rates and thus "optimized for multitasking huge workloads".

Samsung expects to be able to scale V-NAND well past the 1,000 layer mark - a far-cry from the claims made by SK Hynix, who have only talked about a theoretical 600-layer NAND configuration. While the 176-layer, 7-gen V-NAND is only now entering mass production and the final stages of product development, Samsung has already taped out the initial batches of their 8th-gen V-NAND, which feature "more than 200 layers". It's likely that Samsung's 1,000-layer claim actually looks towards the future in a timeframe of decade(s?) and isn't actually something to look forward to in the approximate future.

Samsung Electronics, the world leader in advanced memory technology, today unveiled its new enterprise solid-state drive (SSD) featuring Zoned Namespace (ZNS) technology—the PM1731a. Leveraging ZNS, the SSD will maximize available user capacity and offer an extended lifespan in storage server, data center and cloud environments.

"Samsung's ZNS SSD reflects our commitment to introducing differentiated storage solutions that can substantially enhance the reliability and lifetime of server SSDs," said Sangyeun Cho, senior vice president of the Memory Software Development Team at Samsung Electronics. "We plan to leverage quad-level cell (QLC) NAND technology in our next-generation ZNS drives to enable higher thresholds for storage performance and capacity in the enterprise systems of tomorrow."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced its launch of the industry's highest performing 24G SAS (SAS-4) SSD - the PM1653. Based on the latest SAS interface, the new drive can support twice the speed of the previous 12G SAS-3 generation. The PM1653 is also the industry's first 24G SAS SSD made with sixth-generation (1xx-layer) V-NAND chips, enabling storage capacities from 800 GB to 30.72 TB for advanced enterprise server systems.

"As the leading provider of SAS storage for a decade, Samsung has been offering the most advanced and reliable enterprise solutions in full support of the critical workloads of global server OEMs, governments and financial institutions. Samsung enterprise solutions are also accredited by the U.S. National Institute of Standards and Technology for the most powerful data security," said Kwangil Park, senior vice president of the Memory Product Planning Team at Samsung Electronics. "Like we have done with the PM1653, Samsung will continue to collaborate with our customers to accommodate the ever-growing demand of the enterprise server market for the most uncompromising offerings available."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing its most advanced line of data center SSDs, the PM9A3 E1.S.

The new PM9A3 fully complies with the Open Compute Project (OCP) NVMe Cloud SSD Specification to satisfy the rigorous demands of enterprise workloads. Defined by leading data center providers including Facebook, the OCP Specification is a set of unified interoperable standards, enabling SSD vendors to work toward next-generation storage designs with much more effectiveness.

Samsung Electronics, the world leader in advanced memory technology, today unveiled the company's first consumer PCIe 4.0 NVMe solid state drive (SSD) - the Samsung SSD 980 PRO. The new 980 PRO is designed for professionals and consumers who want cutting-edge performance in their high-end PCs, workstations and game consoles.

"Over the years, Samsung has continuously challenged the limits of high-speed flash memory storage solutions," said Dr. Mike Mang, vice president of Memory Brand Product Biz at Samsung Electronics. "The new 980 PRO SSD reflects our continuing commitment to delivering exceptional products consumers have come to expect from Samsung."

Samsung's hotly anticipated 980 PRO M.2 NVMe flagship client-segment SSD is the company's first "PRO" branded SSD to feature TLC NAND flash memory, breaking from a unique tradition of using MLC (2 bits per cell) NAND flash. Product pages of the drive went live, and its specifications clearly state the use of "Samsung V-NAND 3-bit MLC," which is another way of saying TLC. "MLC" generally referred to as NAND flash memory that stores 2 bits per cell, even through the term "Multi-level" is amorphous.

The product page lists other juicy specs of Samsung's first M.2 NVMe client SSD that takes advantage of PCI-Express gen 4. The drive uses Samsung's in-house design "Elpis" controller, which uses NVMe 1.3 protocol over PCI-Express 4.0 x4, and an LPDDR4 DRAM cache. The 980 PRO comes in capacities of up to 1 TB, with up to 1 GB of DRAM cache. Samsung rates the 1 TB version as capable of up to 7000 MB/s sequential reads, up to 5000 MB/s sequential writes, and up to 1 million IOPS 4K random reads/writes at QD32. The use of TLC impacts endurance adversely in comparison to that of the drive's immediate predecessor, the 970 PRO, with the 1 TB 980 PRO warranty covering only up to 600 TBW, in comparison to 1200 TBW of the 970 PRO 1 TB, and the 500 GB 980 PRO offering just 300 TBW warranty coverage in comparison to 600 TBW of the 970 PRO 512 GB.

Samsung Electronics reported today KRW 52.97 trillion in consolidated revenue and KRW 8.15 trillion in operating profit for the second quarter ended June 30, 2020. Even as the spread of COVID-19 caused closures and slowdowns at stores and production sites around the world, the Company responded to challenges through its extensive global supply chain, while minimizing the impact of the pandemic by strengthening online sales channels and optimizing costs.

Quarterly operating profit rose 26 percent from the previous quarter and 23 percent from a year earlier, thanks to firm demand for memory chips and appliances, as well as a one-off gain at its Display Panel Business. A partial recovery in global demand since May also helped offset some COVID-19 effects, resulting in higher earnings than initially expected. Revenue in the quarter fell 4 percent from the previous quarter and 6 percent from a year earlier due to reduced sales of smartphones and other devices.

Samsung Electronics, the world leader in advanced memory technology, today announced plans to expand its NAND flash production capacity in Pyeongtaek, Korea, reinforcing the company's ability to meet demands from emerging technologies. Construction, which began this May, will pave the way for mass production of Samsung's cutting-edge V-NAND memory in the second half of 2021.

"The new investment reaffirms our commitment to sustain undisputed leadership in memory technologies, even in uncertain times," said Cheol Choi, executive vice president of Memory Global Sales & Marketing at Samsung Electronics. "We will continue to serve the market with the most optimized solutions available, while contributing to growth of the overall IT industry and the economy in general."

Samsung announced today in an OCP Virtual Summit keynote that it has developed a solid state drive (PM9A3 SSD) with a SNIA-based E1.S form factor and full PCIe Gen 4 support to harness the production efficiencies of the company's sixth-generation (1xx-layer), three-bit V-NAND. At the same time, the company said that it has introduced a comprehensive reference design for its E1.S-based storage system.

The keynote, in addition to announcing the PM9A3, highlighted a new approach to open source multi-industry storage collaboration that spotlighted the development of an open-source platform (OSP) fundamentally tied to cloud-scale infrastructure deployments. It was presented by Jongyoul Lee, senior vice president of Samsung's Memory Software Development Team at the Open Compute Project Virtual Global Summit.

Samsung Electronics today reported financial results for the first quarter ended March 31, 2020. Total revenue was KRW 55.33 trillion, a decrease of 7.6% from the previous quarter mainly due to weak seasonality for the Company's display business and Consumer Electronics Division and partially due to effects of COVID-19. From a year earlier, revenue rose 5.6% due to increasing demand for server and mobile components.

Operating profit was lower by KRW 0.7 trillion quarter-on-quarter to KRW 6.45 trillion, affected by the same factors that weighed on revenue with a corresponding decrease in operating margin, even though memory earnings were higher. Compared with a year earlier, operating profit increased by KRW 0.2 trillion with an improved product mix in the mobile business and additional diversification of the Company's customer base in mobile OLED.

In the quarter, foreign exchange movements had little impact on the overall operating profit as the positive effects from a stronger U.S. dollar and euro against the won - felt mainly in the component business - were offset by weakness in currencies in major emerging markets.

Samsung Electronics is reportedly developing its 7th generation V-NAND memory with ultra-high 3D stacking technology. The first model will feature at least 160 layers, subsequent models will feature more. In early signs of the company not wanting to yield the technological initiative to China's YMTC, the first 160-layer V-NAND by Samsung is slated to come out roughly around the time YMTC's 128-layer 3D NAND flash hits mass production, towards the end of 2020.

At the heart of the ultra-high 3D stack is Samsung's proprietary Double Stack technology. The double-stack technology creates electron holes at two separate times for current to go through circuits. The current-generation single-stack chips creates these holes once throughout the stack per cycle. The 160-layer NAND flash is expected to herald a 67% increase in densities per package over the 96-layer chips in the market. Densities could also be increased by other means such as switching to newer semiconductor fabrication nodes, and PLC (5 bits per cell), which is currently being developed by KIOXIA.