News Posts matching "10 nm"

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First 10 nm Intel Processor Out in 2017

With Intel's "tick-tock" product development cycle slowing down to a 3-launch cadence per silicon fab process, the company is preparing to launch no less than three micro-architectures on its next 10 nanometer silicon fab process. The first 10 nm CPU by Intel will launch in 2017.

In 2016, Intel will launch its 7th generation Core "Kaby Lake" processor, its third chip on the 14 nm process (after "Broadwell" and "Skylake"). The first 10 nm micro-architecture will be codenamed "Cannonlake," and will launch some time in 2017. Intel will build chips on the 10 nm for two more generations after "Cannonlake." The company's 2018 micro-architecture, built on the 10 nm will be codenamed "Icelake," and its 2019 release will be codenamed "Tigerlake." It's only 2020 that the company will pull out its next silicon fab process, 5 nm.

Source: OC3D

Samsung to Fab AMD "Zen" and "Arctic Islands" on its 14 nm FinFET Node

It has been confirmed that Samsung will be AMD's foundry partner for its next generation GPUs. It has been reported that AMD's upcoming "Arctic Islands" family of GPUs could be built on the 14 nanometer FinFET LPP (low-power Plus) process. AMD's rival NVIDIA, meanwhile, is building its next-gen "Pascal" GPU family on 16 nanometer FinFET node, likely at its traditional foundry partner TSMC.

It gets better - not only will Samsung manufacture AMD's next-gen GPUs, but also its upcoming "Zen" family of CPUs, at least a portion of it. AMD is looking to distribute manufacturing loads between two foundries, Samsung and GlobalFoundries, perhaps to ensure that foundry-level teething trouble doesn't throw its product launch cycle off the rails. One of the most talked about "Arctic Islands" GPUs is codenamed "Greenland," likely a successor to "Fiji." Sales of some of the first chips - GPUs or CPUs - made at Samsung, will begin some time in Q3 2016. Some of the other clients for Samsung's 14 nm FinFET node are Apple and Qualcomm. The company plans to speed up development of its more advanced 10 nm node to some time in 2017.


Source: ETNews

TSMC to Commence 10 nm Volume Production by Q4-2016

Semiconductor foundry TSMC assured its clients that the company will be ready with a 10 nanometer manufacturing node for volume production, by the 4th quarter of 2016. Company president and joint-CEO Mark Liu made this announcement during the company's recent Q2-2015 earnings call. "The recent progress of our 10 nanometer technology development is very encouraging and on track with our plan," he said. With volume production of chips commencing in Q4, some of the first products based on them should begin appearing in early-2017. "We ramp up 10 nm in the Q4 2016 next year, but the real product shipment will be in Q1 2017," said C.C. Wei, co-CEO.

Source: Kitguru

Moore's Law Buckles as Intel's Tick-Tock Cycle Slows Down

Intel co-founder Gordon Moore's claim that transistor counts in microprocessors can be doubled with 2 years, by means of miniaturizing silicon lithography is beginning to buckle. In its latest earnings release, CEO Brian Krzanich said that the company's recent product cycles marked a slowing down of its "tick-tock" product development from 2 years to close to 2.5 years. With the company approaching sub-10 nm scales, it's bound to stay that way.

To keep Moore's Law alive, Intel adopted a product development strategy it calls tick-tock. Think of it as a metronome that give rhythm to the company. Each "tock" marks the arrival of a new micro-architecture, and each "tick" marks its miniaturization to a smaller silicon fab process. Normally, each year is bound to see one of the two in alternation.

Samsung Mass Producing 10 nm Class High-Performance 128-Gbit 3-bit MLC NAND Flash

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).

"By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs," said Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics. "The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."

Intel 14 nm Silicon Fab Development in Progress

Intel will be capable making chips on the 14 nanometer silicon fabrication process, in 18-inch diameter wafers, "in two years," as development of the technology and machinery to make it happen is making good progress, according to company CTO Justin Rattner. He noted that Intel's aggressive tech advancement will keep Moore's Law relevant for at least the next 10 years. By the end of 2013, Intel's D1X Fab in Oregon, Fab 42 in Arizona, in the US, and Fab 24 in Ireland will begin producing batches of simple chips such as P1272 and P1273 series SoCs. After 14 nm, development for 10 nm, 7 nm, and 5 nm will follow, in order.


Source: DigiTimes

Samsung Announces 10 nm-class eMMC for Slim Smartphones and Tablets

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced a next-generation 64 GB embedded multimedia card (eMMC) using 10 nanometer (nm)-class process technology. The new 64 Gb NAND memory went into production late last month.

Myungho Kim, vice president of Memory marketing, Device Solutions, Samsung Electronics noted, "The new high-speed, small form factor eMMC reinforces Samsung's technology leadership in storage memory solutions. We look forward to expanding our line-up of embedded memory solutions in conjunction with the new chip's design, in pursuing a system-level adoption of application processors and other key components that form the foundation for the most advanced mobile platforms. This will allow us to better attend to time-to-market demands enabling the design of more convenient features for next-generation mobile applications."

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