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Intel Details Newest Microarchitecture and 14 Nanometer Manufacturing Process

Intel today disclosed details of its newest microarchitecture that is optimized with Intel's industry-leading 14 nm manufacturing process. Together these technologies will provide high-performance and low-power capabilities to serve a broad array of computing needs and products from the infrastructure of cloud computing and the Internet of Things to personal and mobile computing.

"Intel's integrated model - the combination of our design expertise with the best manufacturing process - makes it possible to deliver better performance and lower power to our customers and to consumers," said Rani Borkar, Intel vice president and general manager of product development. "This new microarchitecture is more than a remarkable technical achievement. It is a demonstration of the importance of our outside-in design philosophy that matches our design to customer requirements."

TSMC May Lose 16 nm and 14 nm Market Share to Competitors in 2015: Chairman

TSMC may lose out on orders to competing fabs on the 16 nanometer (nm) and 14 nm nodes, in terms of market share, in 2015, according to company chairman Morris Chang. Chips built on the 16 nm node will amount to single-digit percentages of the company's output in the year. Samsung Electronics is expected to take the lead on these processes, as it just netted orders from Qualcomm, a major mobile baseband chip and SoC designer.

Chang stressed that 20 nm and 16 nm will drive revenue for the next three years for major fabs. 20 nm products will account for 10 percent of TSMC's revenues in Q3 2014, will expand to 20 percent in Q4, and contribute over 20 percent of TSMC's revenues in 2015. TSMC's 16 nm node will be competitive for products such as mobile baseband chips, ICs, GPUs, NICs, and server chips. Despite these setbacks in the company's competitive outlook, it expects its revenues to grow by 12.6 to 14.2 percent sequentially in Q3 2014, year over year.Source: DigiTimes

Intel to Manufacture Panasonic System-on-Chips Using 14 nm Process

Intel Corporation today announced that it has entered into a manufacturing agreement with Panasonic Corporation's System LSI Business Division. Intel's custom foundry business will manufacture future Panasonic system-on-chips (SoCs) using Intel's 14 nm low-power manufacturing process.

Panasonic's next-generation SoCs will target audio visual-based equipment markets, and will enable higher levels of performance, power and viewing experience for consumers.

Cadence and Intel Collaborate to Enable a 14 nm Tri-gate Design Platform

Cadence Design Systems, Inc., a leader in global electronic design automation, and Intel Corporation, a world leader in computing innovation, today announced that the companies are collaborating to support Intel's 14 nm Tri-Gate process technology to enable customers of Intel Custom Foundry.

Cadence and Intel have together enabled the custom/analog flow, including Spectre APS, Virtuoso Schematic Editor, Virtuoso Layout Suite and Virtuoso Analog Design Environment for the 14nm Tri-Gate process. The companies are also collaborating on the development of the Cadence digital flow featuring Encounter Digital Implementation System, QRC Extraction Solution, and Tempus Timing Signoff Solution. Using these design flows, customers can leverage the power, performance and area benefits of Intel's 14 nm process technology.

Intel President: Integrated, Smart Connected Devices Fuel Next Era of Computing

As computing continues to evolve and expand beyond the traditional PC, Intel Corporation President Renée James said Intel and the Taiwan technology ecosystem have the exciting opportunity to build on the long history of collaborative innovation to deliver seamless and truly personal computing experiences.

Processor technology continues to get smaller with greater performance and lower power thanks to Moore's Law, expanding the scale and potential for Intel technology and that of the Taiwan ecosystem, from infrastructure for cloud computing and the Internet of Things to personal and mobile computing and wearable technology.

Samsung 14 nm FinFET Process Technology Ecosystem Solidly in Place

Stating that not all FinFETs are created equal, Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that the IP and design enablement ecosystem for its foundry's 14nm FinFET process technology is firmly in place as customers begin their early design work. Highlighting this fact, Samsung will be demonstrating a 14nm FinFET system-on-chip (SoC) reference board at the 51st Annual Design Automation Conference.

"To ease customers design risks moving to 14nm FinFET, we need to have all the elements of the design ecosystem optimized well in advance," said Dr. Shawn Han, vice president of foundry marketing, Samsung Electronics. "We are pleased to work with the industry's leading IP and design enablement companies. Our early work at this advanced node will allow our customers to bring their next-generation SoCs to the market quickly while taking full advantage of the benefits of our 14nm FinFET technology." Samsung's foundry offering has focused its 14nm FinFET ecosystem efforts with key IP partners. Collaboration specifically around optimal Fin-based design infrastructure and early FinFET IP development has resulted in foundation libraries and advanced IP suite. On the enablement side, Samsung, with its EDA partners, has worked to optimize 3D device modeling, extraction solutions, and design verification as well as Design for Manufacturing (DFM) solutions. The result of which is the 14nm FinFET reference board that will be on display at DAC 2014.

Intel's 14 nm "Broadwell" Could Launch by Late-2014

Intel's first processors based on the company's "Broadwell" silicon, which is an incremental upgrade to "Haswell," and built on Intel's swanky new 14 nanometer silicon fabrication process, could launch by late-2014. Intel responded to the 2014 "Back to School" shopping season with 9-series chipset motherboards featuring LGA1150 sockets, and Core "Haswell" Refresh processors. Mobile CPUs based on the silicon, were launched, too. Intel couldn't deliver on "Broadwell," the processor its 9-series chipset was originally designed to accompany. Back in 2013, "Broadwell" was expected to be Intel's big mid-2014 launch, in tune with its "Tick-Tock" product development strategy, that sees introductions of new micro-architectures, and new silicon fabrication processes take turns each year.

Source: Reuters

Samsung and GLOBALFOUNDRIES to Deliver Multi-Sourced 14 nm FinFET Offering

Samsung Electronics Co., Ltd. and GLOBALFOUNDRIES today announced a new strategic collaboration to deliver global capacity for 14 nanometer (nm) FinFET process technology. For the first time, the industry's most advanced 14 nm FinFET technology will be available at both Samsung and GLOBALFOUNDRIES, giving customers the assurance of supply that can only come from true design compatibility at multiple sources across the globe.

The new collaboration will leverage the companies' worldwide leading-edge semiconductor manufacturing capabilities, with volume production at Samsung's fabs in Hwaseong, Korea and Austin, Texas, as well as GLOBALFOUNDRIES' fab in Saratoga, New York.

Altera and Intel Extend Manufacturing Partnership

Altera Corporation and Intel Corporation today announced their collaboration on the development of multi-die devices that leverage Intel's world-class package and assembly capabilities and Altera's leading-edge programmable logic technology. The collaboration is an extension of the foundry relationship between Altera and Intel, in which Intel is manufacturing Altera's Stratix 10 FPGAs and SoCs using the 14 nm Tri-Gate process.

Altera's work with Intel will enable the development of multi-die devices that efficiently integrates monolithic 14 nm Stratix 10 FPGAs and SoCs with other advanced components, which may include DRAM, SRAM, ASICs, processors and analog components, in a single package. The integration will be enabled through the use of high-performance heterogeneous multi-die interconnect technology. Altera's heterogeneous multi-die devices provide the benefit of traditional 2.5 and 3D approaches with more favorable economic metrics. The devices will address the performance, memory bandwidth and thermal challenges impacting high-end applications in the communications, high-performance computing, broadcast and military segments.

New Intel CEO Outlines Product Plans, Future of Computing Vision at IDF 2013

From data centers to ultra-mobile devices such as tablets, phones and wearables, computing segments are undergoing exciting and even game-changing transitions, said new Intel CEO Brian Krzanich during today's opening session of the Intel Developer Forum. Krzanich laid out Intel's vision and described how Intel is addressing each dynamic market segment - such as accelerating Intel's progress in ultra-mobile devices - with new products over the next year and beyond, including a new, lower-power product family.

Krzanich said Intel plans to leave no segment untapped. "Innovation and industry transformation are happening more rapidly than ever before, which play to Intel's strengths. We have the manufacturing technology leadership and architectural tools in place to push further into lower power regimes. We plan to shape and lead in all areas of computing."
Image courtesy of Engadget

Mass Production at Intel's 14 nanometer Node Begins This Year

In addition to the industry's first fully-patterned 450 mm wafer, Intel announced that its 14 nanometer silicon fabrication node at three of its fabs will begin this year. The next leap forward from 22 nm, on which two of the company's CPU generations "Ivy Bridge" and "Haswell" are based, the 14 nm node will eventually facilitate production of the company's 5th generation Core "Broadwell" processors, which are due to arrive in 2014. Given the pace at which the 14 nm node is being developed, some of the first Broadwell Core chips, at least engineering samples, will be released to the industry within 2013. Among the three Intel facilities with 14 nm nodes are D1X, located in Oregon; Fab 42, located in Arizona; and Fab 24, located in Ireland.

Source: Expreview

Samsung Delivers Strong 14 nm FinFET Logic Process and Design Infrastructure

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that it reached another milestone in the development of 14-nanometer (nm) FinFET process technology with the successful tape-out of multiple development vehicles in collaboration with its key design and IP partners. In addition, Samsung has signed an agreement with ARM for 14 nm physical IP and libraries. This agreement is the latest in a series from Samsung and ARM that has delivered production proven SoC enablement. Samsung, together with its ecosystem partners, is in a position to offer leading edge customers a robust design infrastructure to drive an ever expanding advanced mobile SoC market.

"As we move closer to true mobile computing, chip designers are eager to take advantage of the gains in performance and significantly lower power of 14 nm FinFET to deliver PC like user experience on a mobile device," said Dr. Kyu-Myung Choi, senior vice president of System LSI infrastructure design center, Device Solutions Division, Samsung Electronics. "The design complexities at 14 nm require complete harmony between the process technology, design methodology, tools and IPs. We are synchronizing all the key elements so our customers can deliver their newest chips to market quickly and efficiently."

Intel 14 nm Silicon Fab Development in Progress

Intel will be capable making chips on the 14 nanometer silicon fabrication process, in 18-inch diameter wafers, "in two years," as development of the technology and machinery to make it happen is making good progress, according to company CTO Justin Rattner. He noted that Intel's aggressive tech advancement will keep Moore's Law relevant for at least the next 10 years. By the end of 2013, Intel's D1X Fab in Oregon, Fab 42 in Arizona, in the US, and Fab 24 in Ireland will begin producing batches of simple chips such as P1272 and P1273 series SoCs. After 14 nm, development for 10 nm, 7 nm, and 5 nm will follow, in order.


Source: DigiTimes

Cadence Announces Tapeout of 14 nm Test-Chip

Cadence Design Systems, Inc., a leader in global electronic design innovation, announced today the tapeout of a 14-nanometer test-chip featuring an ARM Cortex-M0 processor implemented using IBM's FinFET process technology. The successful tapeout is the result of close collaboration between the three technology leaders as they teamed to build an ecosystem to address the new challenges from design through manufacturing inherent in a 14-nanometer FinFET-based design flow.

The 14-nanometer ecosystem and chip are significant milestones of a multi-year agreement between ARM, Cadence and IBM to develop systems-on-chip (SoCs) at the advanced process nodes of 14 nanometers and beyond. SoCs designed at 14 nanometers with FinFET technology offer the promise of a significant reduction in power consumption.

GLOBALFOUNDRIES Unveils FinFET Transistor Architecture for Next-Gen Mobile Devices

GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company's 14nm-XM offering will give customers the performance and power benefits of three-dimensional "FinFET" transistors with less risk and a faster time-to-market, helping the fabless ecosystem maintain its leadership in mobility while enabling a new generation of smart mobile devices.

The XM stands for "eXtreme Mobility," and it is the industry's leading non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60% improvement in battery life when compared to today's two-dimensional planar transistors at the 20 nm node.

NVIDIA Wants 450 mm Wafers, Seeking Foundry Partnership with GlobalFoundries, Samsung

NVIDIA is formulating a long-term chip manufacturing strategy that will see its interests secure by the time chip manufacturing has moved on to 14 nm (which follows 20 nm and today's 28 nm), which could arrive around 2015. Chip manufacturing by foundry partners is a potentially major irritant for NVIDIA, which wants to see wafer sizes getting increased from the current 300 mm manufacturing at TSMC, to 450 mm, and fast. TSMC will achieve 450 mm (18-inch) wafer manufacturing capability only by 2015. Another irritant for NVIDIA is TSMC's change in business model, which charges fabless customers "per wafer manufactured", rather than "per working chip yielded", giving them what they perceive to be the shorter end of the stick. NVIDIA is thus rigorously evaluating other foundry partners. We know from a slightly older report that Samsung has sent NVIDIA test chips manufactured at its Austin, Texas facility. There is talk that NVIDIA could also seek partnerships with GlobalFoundries, of which AMD recently relinquished all its stakes on. NVIDIA needs reliable, high-volume foundry partners that can keep it competitive not just with its main business of GPUs, but also a potential gold mine that is application processors.

Source: VR-Zone
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