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Intel Custom Foundry Demos Industry-Leading 32 Gbps SerDes on 14 nm Process

Intel Corporation today unveiled silicon characterization results for its 1 to 32 Gbps high-speed SerDes on the 14nm process. This 32 Gbps SerDes is the second SerDes offering and adds to the previously announced 1 to 16 Gbps GP 14nm SerDes. It will be available by end of this year.

Intel's 14nm SerDes family is the second generation of SerDes offering and is built on the success of Intel's 12 and 28 Gbps SerDes, which is currently in production on Intel's 22nm Tri-gate process technology. Intel's 14nm SerDes extends the operating range while reducing power by 20 percent and area by more than 40 percent as compared to Intel's 22nm SerDes offering. This announcement marks the first time that a 32 Gbps, multiprotocol SerDes has been validated on any sub-20nm foundry process.

Samsung Now Mass Producing Industry's First 20-Nanometer 6Gb LPDDR3 Mobile DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing its six gigabit (Gb) low-power double data rate 3 (LPDDR3) mobile DRAM, based on advanced 20 nanometer (nm) process technology. The highly-efficient new mobile memory chip will enable longer battery run-time and faster application loading on large screen mobile devices with higher resolution.

"Our new 20nm 6Gb LPDDR3 DRAM provides the most advanced mobile memory solution for the rapidly expanding high-performance mobile DRAM market," said Jeeho Baek, vice president, memory marketing, Samsung Electronics. "We are working closely with our global customers to offer next-generation mobile memory solutions that can be applied to a more extensive range of markets ranging from the premium to standard segments."

Samsung's new 6Gb LPDDR3 has a per-pin data transfer rate of up to 2,133 megabits per second (Mbps). A 3GB (gigabyte) LPDDR3 package, which consists of four 6Gb LPDDR3 chips, can be easily created for use in a wide range of mobile devices. Also, the package greatly strengthens our product portfolio for premium mobile applications.

Samsung Now Mass Producing Industry's Most Advanced DDR4

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is mass producing the most advanced DDR4 memory, for enterprise servers in next-generation data centers.

With the introduction of these high-performance, high-density DDR4 modules, Samsung can better support the need for advanced DDR4 in rapidly expanding, large-scale data centers and other enterprise server applications.

Samsung Introduces World's First 3D V-NAND Based SSD for Enterprise Applications

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today introduced the first solid state drive (SSD) based on its industry-leading 3D V-NAND technology. Samsung announced its new SSD, designed for use in enterprise servers and data centers, during a keynote at the Flash Memory Summit 2013 here.

"By applying our 3D V-NAND - which has overcome the formidable hurdle of scaling beyond the 10-nanometer (nm) class*, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption," said E.S. Jung, executive vice president, semiconductor R&D center at Samsung Electronics and a keynote speaker at the Flash Memory Summit. "As we pioneer a new era of memory technology, we will continue to introduce differentiated green memory products and solutions for the server, mobile and PC markets to help reduce energy waste and to create greater shared value in the enterprise and for consumers."

SK Hynix Develops the World's First High Density 8 Gb LPDDR3

SK Hynix Inc. announced that it has developed the world's first 8 Gb(Gigabit) LPDDR3 (Low Power DDR3) using its advanced 20nm class process technology. This product is a top-performance mobile memory solution which features high density, ultrahigh speed and low power consumption.

The new products can be stacked up and realize a high density of maximum 4 GB(Gigabytes, 32 Gb) solution in a single package. In addition, the height of this package becomes dramatically thinner than the existing 4 Gb-based one. In terms of its high density and competitive package height, it is suitable for the newest trend of the mobile applications.

GLOBALFOUNDRIES Accelerates Adoption of 20nm-LPM and 14nm-XM FinFET Processes

At next week's 50th Design Automation Conference (DAC) in Austin, Texas, GLOBALFOUNDRIES will unveil a comprehensive set of certified design flows to support its most advanced manufacturing processes. The flows, jointly developed with the leading EDA providers, offer robust support for implementing designs in the company's 20nm low power process and its leading-edge 14nm-XM FinFET process. Working closely with Cadence Design Systems, Mentor Graphics and Synopsys, GLOBALFOUNDRIES has developed the flows to address the most pressing design challenges, including support for analog/mixed signal (AMS) design, and advanced digital designs, both with demonstration of the impact of double patterning on the flow.

The GLOBALFOUNDRIES design flows work with its process design kits (PDKs) to provide real examples that demonstrate the entire flow. The user can download the design database, the PDK, detailed documentation and multi-vendor scripts to learn how to set up and use the GLOBALFOUNDRIES design flow. The flows use open source examples and provide the customer with working, executable and customizable flows.

Samsung Now Producing 4 Gb LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

"By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "Our 20nm-class four gigabit mobile DRAM provides another example of our ability to deliver well-differentiated, high-performance, high-density memory to customers in a timely manner."

GLOBALFOUNDRIES Demonstrates 3D TSV Capabilities on 20nm Technology

GLOBALFOUNDRIES today announced the accomplishment of a key milestone in its strategy to enable 3D stacking of chips for next-generation mobile and consumer applications. At its Fab 8 campus in Saratoga County, N.Y., the company has demonstrated its first functional 20nm silicon wafers with integrated Through-Silicon Vias (TSVs). Manufactured using GLOBALFOUNDRIES' leading-edge 20nm-LPM process technology, the TSV capabilities will allow customers to stack multiple chips on top of each other, providing another avenue for delivering the demanding performance, power, and bandwidth requirements of today's electronic devices.

TSVs are vertical vias etched in a silicon wafer that are filled with a conducting material, enabling communication between vertically stacked integrated circuits. The adoption of three-dimensional (3D) chip stacking is increasingly being viewed as an alternative to traditional technology node scaling at the transistor level. However, TSVs present a number of new challenges to semiconductor manufacturers.

Western Digital Makes Strategic Investment in Skyera

Skyera Inc. and Western Digital Corp. (NASDAQ: WDC) today announced that Skyera has received strategic funding from Western Digital Capital as part of its recently announced Series B round of financing. Western Digital Capital co-invested in the $51 million round as an extension of the strategic relationship between the two companies that also includes joint technology development. Western Digital had previously funded Skyera as its initial outside investor.

"The backing of Western Digital has enabled us to ramp our business across marketing, sales and engineering which has been instrumental in creating the industry's most innovative solid-state solution," said Radoslav Danilak , chief executive officer of Skyera. "With our skyHawk family of enterprise solid-state storage systems we are witnessing the next era of solid-state storage and I strongly believe that having a close working relationship with Western Digital, the world's top disk drive vendor, is invaluable as we set out to reshape the storage landscape."

VIA Labs Announces Next-Generation USB 3.0 to NAND Flash Controllers

VIA Labs, Inc., a leading supplier of USB 3.0 integrated chip controllers, today announced its two latest USB 3.0 device controllers, the VIA VL752 and VIA VL753 SuperSpeed USB 3.0 to NAND flash controllers. The VIA VL752 and VIA VL753 deliver enhanced performance using the latest NAND flash technologies including 19nm, 20nm and 21nm geometries and have been certified by the USB Implementers Forum (USB-IF) for SuperSpeed operation, ensuring high quality, seamless interoperability, and effortless backwards compatibility.

The two-channel the VIA VL752 and single-channel VIA VL753 offer data transfer speeds up to 280MB/s, flexible bad block management, support for the latest 200MHz DDR NAND Flash, and a robust ECC engine for greater data integrity. The package sizes from the previous generation of VIA Superspeed USB to NAND flash controllers have been reduced to a QFN68 8 x 8mm package for the VIA VL752 and a QFN48 6 x 6mm package for the VIA VL753 to enable the smallest form-factor designs.

NVIDIA to Pull Through 2013 with Kepler Refresh, "March of Maxwell" in 2014

Those familiar with "Maxwell," codename for NVIDIA's next-generation GPU architecture, will find the new company roadmap posted below slightly different. For one, Maxwell is given a new launch timeframe, in 2014. Following this year's successful run at the markets with the Kepler family of GPUs, NVIDIA is looking up to Kepler Refresh GK11x family of GPUs to lead the company's product lineup in 2013. The new GPUs will arrive in the first half of next year, most likely in March, and will be succeeded by the Maxwell family of GPUs in 2014. Apart from the fact that Kepler established good performance and energy-efficiency leads over competitive architectures, a reason behind Maxwell's 2014 launch could be technical. We know from older reports that TSMC, NVIDIA's principal foundry partner, will begin mass production of 20 nanometer chips only by Q4-2013.

Source: WCCFTech

Micron 20 nm NAND Flash Powers Skyhawk Enterprise SSD

Micron Technology, Inc. today announced another new storage industry milestone—the integration of its 20nm NAND flash storage media into a high-endurance, high-capacity enterprise system. San Jose-based Skyera is using Micron's 20nm, 128 gigabit (Gb) multilevel cell (MLC) NAND flash storage media to pack an astounding 44 terabytes (TB) into a single, compact enterprise storage system for big data, cloud computing, and virtualization applications. Skyera's Skyhawk system uses more than 3,000 Micron flash storage components, creating a high-capacity, high-performance storage solution that fits into a 1U form factor—about the size of a pizza box.

Both the end system and the components have earned industry awards for innovation. The Skyhawk storage system‘s impressive capabilities earned it Best of Show at this year’s Flash Memory Summit in August. In February, UBM TechInsights recognized Micron‘s groundbreaking 20nm MLC NAND (developed jointly with Intel); giving it their top honor—Semiconductor of the Year. This 20nm process technology is critical to creating storage media with the capacity, endurance, and cost-effectiveness required for enterprise storage on this scale—and Micron’s device is the only MLC NAND available in a 128 Gb density.

SK Hynix Introduces DDR3L-Reduced Standby for Mobile Solutions

SK Hynix announced that it has introduced DDR3L-RS (Reduced Standby) DRAM for mobile solutions using its 20nm class technology. This product significantly reduces the standby power consumption.

By using cutting-edge 20nm class technology and efficiently managing standby current, this DDR3L-RS product reduces 70% of standby power compared to existing DDR3L DRAM while it maintains DDR3L performance. DDR3L DRAM which has recently gone mainstream works at 1.35V, while DDR3 DRAM does at 1.5V.

ARM and GLOBALFOUNDRIES Collaborate to Enable Devices on 20 nm and FinFET

GLOBALFOUNDRIES and ARM today announced a multi-year agreement to jointly deliver optimized system-on-chip (SoC) solutions for ARM processor designs on GLOBALFOUNDRIES’ 20-nanometer (nm) and FinFET process technologies. The new agreement also extends the long-standing collaboration to include graphics processors, which are becoming an increasingly critical component in mobile devices. As part of the agreement, ARM will develop a full platform of ARM Artisan Physical IP, including standard cell libraries, memory compilers and POP IP solutions. The results will help enable a new level of system performance and power-efficiency for a range of mobile applications, from smartphones to tablets to ultra-thin notebooks.

The companies have been collaborating for several years to jointly optimize ARM Cortex-A series processors, including multiple demonstrations of performance and power-efficiency benefits on 28nm as well as a 20nm test-chip implementation currently running through GLOBALFOUNDRIES fab in Malta, N.Y. This agreement extends the prior efforts by driving production IP platforms that will enable customer designs on 20nm and promote rapid migration to three-dimensional FinFET transistor technology. This joint development will enable a faster time to delivering SoC solutions for customers using next-generation ARM CPUs and GPUs in mobile devices.

SK Hynix to Launch Client-side SSD in the US

SK Hynix announced its launch of client SSD (Solid State Drive). The SSD features faster speed and low power consumption than HDD (Hard Disk Drive) so it is expected to replace the HDD as another type of storage for PCs and other applications.

The first ever SK Hynix’s client 2.5” SSD consists of ONFI synchronous NAND Flash memory using 20nm class process and densities of 128GB (Gigabyte) and 256GB are available. It significantly improves the speed and reliability by adopting SATA III interface with data transmissions at 6Gb/s (Gigabits per second). This high performance SSD generates sequential read speeds of 510MB/s (Megabytes per second) and sequential write speeds of 470MB/s. It is three or four times faster than the traditional HDD.

Samsung Electronics Announces New 300 mm Logic Line in Korea

Samsung Electronics Co. Ltd., a world leader in advanced semiconductor solutions, today announced plans to build a new fabrication line in Hwaseong, South Korea, to meet the growing demands for logic products. Samsung will invest 2.25 trillion Korean won in the new fabrication line, which will break ground this month with a target timeline for completion by the end of 2013.

The new fabrication line will mainly produce highly advanced mobile application processors on 300mm wafers at 20nm and 14nm process nodes. Along with Lines 9 and 14, which have been converted to System LSI fabrication earlier this year, the new line will help supply to the expanding need for smart mobile solutions.

GLOBALFOUNDRIES Silicon Validates 28nm AMS Production Design

At next week’s Design Automation Conference (DAC) in San Francisco, Calif., GLOBALFOUNDRIES plans to demonstrate an enhanced silicon-validated design flow for its 28nm Super Low Power (SLP) technology with Gate First High-k Metal Gate (HKMG). The flow provides proven and complete front-to-back support for advanced analog/mixed-signal (AMS) design using the industry’s latest design automation technology. In addition, the company will reveal jointly developed design flows with its EDA partners in certifying both analog and digital “double patterning aware” flows for its 20nm process, with silicon validation expected in early 2013 at that technology node.

As a result of GLOBALFOUNDRIES’ commitment to silicon validation of flows before releasing them, customers have the confidence to produce signoff-ready 28nm digital and analog designs using the industry's most advanced set of design tools, tool scripts, and methodologies from the leading EDA suppliers. The company’s tight collaboration with the design tool and IP ecosystem also accelerates its ability to develop working flows for advanced nodes such as 20nm, providing their advantages in gate density, performance, and lower power to customers ahead of other foundries.

Samsung Now Producing Highest Density Mobile LPDDR2 Using 20nm-class Technology

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, announced today that it has begun producing the industry’s first four gigabit (Gb), low power double-data-rate 2 (LPDDR2) memory using 20 nanometer (nm) class* technology. The mobile DRAM (dynamic random access memory) chip, which went into mass production last month, will help the market to deliver advanced devices that are faster, lighter and provide longer battery life than today’s mobile devices.

“Samsung began expanding the market for 4Gb DRAM last year with the first mass-produced 30nm-class DRAM, and now we are working on capturing most of the advanced memory market with our new 20nm-class 4Gb DRAM,” said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. “In the second half of this year, we expect to strongly increase the portion of 20nm-class DRAM within our overall DRAM output to make the 4Gb DRAM line-up the mainstream product in DRAM production, and therefore keeping the leadership position in the premium market and strengthening our competitive edge.”

TSMC Woos Apple with 20 nm Production

TSMC, which is currently able to meet less than 70 percent of orders placed by Qualcomm, NVIDIA, AMD, TI, and Broadcom, for 28 nm chip manufacturing, is planning an early investment into its succeeding 20 nm manufacturing process that will ensure it has a new process ready well in advance (of its 2013 target), so it could seek orders in advance, and attain high volume capacity by 2013. Industry sources say TSMC has a good chance of landing orders for CPUs by Apple, in 2014. Apple's current-generation A5X chip is built on the 40 nm process, by Samsung. TSMC has revealed plans to invest about US$700 million in building a 20nm R&D line in 2012 – instead of its originally-planned 2013.

Source: DigiTimes

GLOBALFOUNDRIES Fab 8 Adds Tools to Enable 3D Chip Stacking at 20nm and Beyond

GLOBALFOUNDRIES today announced a significant milestone on the road to enabling 3D stacking of chips for next-generation mobile and consumer applications. At its Fab 8 campus in Saratoga County, NY, the company has begun installation of a special set of production tools to create Through-Silicon Vias (TSVs) in semiconductor wafers processed on the company’s leading-edge 20nm technology platform. The TSV capabilities will allow customers to stack multiple chips on top of each other, providing another avenue for delivering the demanding requirements of tomorrow’s electronic devices.

Essentially vertical holes etched in silicon and filled with copper, TSVs enable communication between vertically stacked integrated circuits. For example, the technology could allow circuit designers to place stacks of memory chips on top of an application processor, which can dramatically increase memory bandwidth and reduce power consumption—a key challenge for designers of the next generation of mobile devices such as smartphones and tablets.

Microsoft and Samsung Cooperate on More Efficient Cloud Implementation

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced test results for servers utilizing the world's first 20 nanometer (nm) class Green Memory that were conducted at the Microsoft Technology Center (MTC) in Munich. A system based on Samsung's 20 nm-class DDR3 memory and solid state drives (SSDs) together with Microsoft Windows Server 2008 R2 and Hyper-V proved to be twice as fast as current memory configurations for servers setting up virtual machine instances and recovering data in private cloud environments. These advanced configurations also consumed as much as 50 percent less power per server.

Intel and Micron develop first-ever 128 Gb NAND Flash memory chip

Flash buddies Intel and Micron have today announced a significant breakthrough in terms of NAND density, the first 128 Gb (16 GB) MLC NAND memory chip. Manufactured on 20 nm process technology, this 128 Gb chip complies with the ONFI 3.0 specification (enabling speeds of up to 333 megatransfers per second) and can be used for new, high-capacity solid state drives, as well as for next-generation tablets, smartphones and other portable devices.

According to Intel and Micron, this milestone was made possible by the use of a new, innovative cell structure that 'breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.'
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