News Posts matching "DRAM"

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Samsung Starts Production of 8-Gigabit DDR4 Based on 20 Nanometer Technology

Samsung Electronics announced that it is mass producing the industry's most advanced 8-gigabit (Gb) DDR4 memory and 32-gigabyte (GB) module, both of which will be manufactured based on a new 20-nanometer (nm) process technology, for use in enterprise servers.

"Our new 20 nm 8 Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers," said Jeeho Baek, Vice President of Memory Marketing at Samsung Electronics. "By expanding the production of our 20 nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market."

ADATA Launches HC500 External Hard Drive

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, today launches the Choice HC500 2.5" Hard Drive with TV recording support features. The HC500 external storage hard drive attaches to your smart television or PC via a super-fast USB 3.0 cable, and sports a sandblasted titanium or gold casing. Available in 500GB, 1TB and 2TB capacities, the Choice HC500 Hard Drive comes with smart backup software that allows you back up data, and then set up your very own personal data cloud using a PC or smartphone.

Flawlessly crafted in either titanium or gold matte, the HC500 Hard Drive offers both the easy connectivity of directly attached personal data and TV media storage. For those who require direct connectivity, simply plug the hard drive into your PC or smart TV. Store and manage any kind of personal media via super-fast USB 3.0 on your PC, and then connect the HC500 to your smart TV to enjoy full-featured video capabilities such as playback, rewind and fast-forward. Too busy to enjoy your favorite TV programs? Just leave your Choice HC500 Hard Drive plugged into your television and record hours of movies and programs to enjoy later.

Virtium Introduces DDR4 VLP UDIMM and VLP RDIMM Products

Virtium, the embedded industry's trusted supplier of highly reliable infrastructure SSDs and industrial memory modules, today expanded its embedded infrastructure market support with two new DDR4 VLP UDIMM and VLP RDIMM memory module form factors.

Virtium was one of the first to offer DDR4 memory modules, and the company's latest modules give embedded-industrial OEMs increased performance, lower power and higher bandwidth advantages thanks to the latest evolution in DRAM technology. Offering power savings of up to 40% and as much as twice the bandwidth compared to previous-generation DDR3 modules, Virtium's DDR4 modules are ideal solutions for server blades, networking and telecom applications.

Samsung Now Mass Producing Industry's First 20-Nanometer 6Gb LPDDR3 Mobile DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing its six gigabit (Gb) low-power double data rate 3 (LPDDR3) mobile DRAM, based on advanced 20 nanometer (nm) process technology. The highly-efficient new mobile memory chip will enable longer battery run-time and faster application loading on large screen mobile devices with higher resolution.

"Our new 20nm 6Gb LPDDR3 DRAM provides the most advanced mobile memory solution for the rapidly expanding high-performance mobile DRAM market," said Jeeho Baek, vice president, memory marketing, Samsung Electronics. "We are working closely with our global customers to offer next-generation mobile memory solutions that can be applied to a more extensive range of markets ranging from the premium to standard segments."

Samsung's new 6Gb LPDDR3 has a per-pin data transfer rate of up to 2,133 megabits per second (Mbps). A 3GB (gigabyte) LPDDR3 package, which consists of four 6Gb LPDDR3 chips, can be easily created for use in a wide range of mobile devices. Also, the package greatly strengthens our product portfolio for premium mobile applications.

SanDisk Announces ULLtraDIMM Design Win with Huawei

SanDisk Corporation, a global leader in flash storage solutions, today announced that its award-winning ULLtraDIMM Solid State Drive (SSD), has been selected by Huawei Technologies Co. Ltd for inclusion in its RH8100 V3 servers. Huawei selected the ULLtraDIMM SSD after extensive testing under a variety of enterprise workloads and end-user scenarios using the RH8100 V3 server, which demonstrated the ULLtraDIMM SSD achieved the industry's lowest write latency at less than five microseconds and offered bandwidth that topped that of any other SSD solution. Adding flash-based storage to the DDR memory bus with direct connection to the processor allows Huawei to deliver a powerful solution to help customers address growing data center application performance requirements without significant additional infrastructure investments.

"The ULLtraDIMM SSD was designed to expand the reach of ultra-low latency flash storage throughout the data center and scale to meet the requirements of any enterprise application, no matter how bandwidth or capacity intensive," said John Scaramuzzo, senior vice president and general manager, Enterprise Storage Solutions at SanDisk. "We are very excited to partner with Huawei to offer this innovative, ultra-low latency storage solution, which will accelerate the performance of its customers' cloud, virtualization, OLTP, HPC and other applications, and help them experience the benefits of a flash-transformed data center."

Century Micro Unveils Entry-level DDR4 ECC Registered Memory Modules

Japanese memory maker Century Micro announced its entry-level DDR4 ECC registered memory modules. Compatible with Intel Xeon E5-2600 v3 and Core i7-5000 HEDT processors, the modules come in density of 8 GB (model: CD8G-D4RE2133L82), making up single-module and four-module (32 GB) kits. The CD8G-D4RE2133L82 complies with JEDEC specifications, and runs at DDR4-2133 MHz speeds, with a module voltage of 1.2V, and timings of 15-15-15. The module features an 8-layer PCB, and appears to use DRAM chips made by SK Hynix. The modules will start selling in a couple of weeks from now.

JEDEC Publishes Wide IO 2 Mobile DRAM Standard

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD229-2 Wide I/O 2. Wide I/O 2 offers a significant speed increase over Wide I/O, while retaining Wide I/O's vertically stacked through silicon via (TSV) architecture and optimized packaging. Combined, these characteristics position Wide I/O 2 to deliver the ever-increasing speed, capacity, and power efficiency demanded by mobile devices such as smartphones, tablets and handheld gaming consoles. JESD229-2 may be downloaded free of charge from the JEDEC website here.

Wide I/O 2 provides four times the memory bandwidth (up to 68GBps) of the previous version of the standard, but at lower power consumption (better bandwidth/Watt) with the change to 1.1V supply voltage. From a packaging standpoint, the Wide I/O 2 die is optimized to stack on top of a system on chip (SOC) to minimize power consumption and footprint.

The Stilt Drives AMD FX-8370 to 8722.78 MHz

Finnish overclocker "The Stilt" overclocked his brand new AMD FX-8370 to a record-breaking 8722.78 MHz. The target was achieved using a base-clock of 276.91 MHz, and a multiplier of 31.5x, core voltage of 2.004V, and DRAM frequency of 1107 MHz (2214 MHz DDR). Other hardware included an ASUS Crosshair V Formula-Z motherboard, and 2x 4 GB of AMD made DDR3 memory. The setup was cooled by a liquid nitrogen evaporator. Find the validation and other details here.

Samsung Starts Mass Producing First 3D TSV Technology Based DDR4 Modules

Samsung Electronics, Ltd. announced today that it has started mass producing the industry's first 64 gigabyte (GB), double data rate-4 (DDR4), registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) "through silicon via" (TSV) package technology. The new high-density, high-performance module will play a key role in supporting the continued proliferation of enterprise servers and cloud-based applications, as well as further diversification of data center solutions.

The new RDIMMs include 36 DDR4 DRAM chips, each of which consists of four 4-gigabit (Gb) DDR4 DRAM dies. The low-power chips are manufactured using Samsung's most advanced 20-nanometer (nm) class* process technology and 3D TSV package technology.

JEDEC Releases LPDDR4 Standard for Low Power Memory Devices

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-4 Low Power Double Data Rate 4 (LPDDR4). Designed to significantly boost memory speed and efficiency for mobile computing devices such as smartphones, tablets, and ultra-thin notebooks, LPDDR4 will eventually operate at an I/O rate of 4266 MT/s, twice that of LPDDR3.

The new interface promises to have an enormous impact on the performance and capabilities of next-generation portable electronics. "LPDDR4 represents a dramatic performance increase," said Mian Quddus, Chairman, JEDEC Board of Directors. "It is intended to meet the power, bandwidth, packaging, cost and compatibility requirements of the world's most advanced mobile systems." Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, the JESD209-4 LPDDR4 standard can be downloaded from the JEDEC website for free by clicking here.

Corsair Officially Announces Vengeance LPX and Dominator Platinum DDR4 Memory

Corsair, a leader in high-performance PC hardware, today announced the availability of Corsair Vengeance LPX and Dominator Platinum lines of high-speed DDR4 computer memory. This new generation of memory ushers in a new age of ultrafast computing with optimizations such as increased DRAM bandwidth, higher bus frequencies, lower power usage, and higher reliability.

Corsair Vengeance LPX and Dominator Platinum DDR4 memory kits are validated with motherboard partners (ASUS, ASRock, EVGA, Gigabyte, and MSI) and use the new XMP 2.0 profile to deliver easy, reliable overclocking performance with the upcoming next-generation Intel X99 platforms and Intel Core i7 processors (codenamed Haswell-E). The Vengeance LPX and Dominator Platinum memory kits are supplied with a limited lifetime warranty.

Super Talent Announces Availability of New M.2 Form-factor SSDs

Super Talent Technology, a leading manufacturer of NAND Flash storage solutions and DRAM memory modules, updates its NGFF SSD series. Super Talent next generation form factor SSDs are internally mounted high performance storage solutions utilizing M.2 connectors. These devices are designed to be used for embedded applications and mobile computing in a variety of industries.

"Super Talent's NGFF SSDs are used extensively in today's rapidly expanding ultra-lightweight computing sector. The small form factor and high performance speeds make them a highly sought after storage solution for mobile computing," said VP of Engineering, Shimon Chen.

Micron Announces Monolithic 8 Gb DDR3 SDRAM

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced the introduction of a monolithic 8 Gb DDR3 SDRAM component, enhancing its leadership position as a diverse memory solutions provider for enterprise applications such as data analytics. This new design is based on Micron's latest-generation 25 nm DRAM manufacturing process.

DDR3 is the mainstream DRAM technology for the enterprise market, and the addition of an 8 Gb monolithic component will enable cost-effective, high-capacity solutions optimized to support large-scale, data-intensive workloads.

I'M Intelligent Memory Debuts 8 Gb DDR3 Components, 16 GB Modules

I'M Intelligent Memory, a Hong Kong based fabless DRAM manufacturer, announces availability of the world's first 8 Gigabit (Gb) DDR3 components with a single chip-select, doubling the amount of memory per chip compared to other DDR3 DRAM devices on the market. Based on these new 8 Gb components, I'M is also introducing the first 16 Gigabyte (GB) DDR3 UDIMM and SO-DIMM memory modules with optional ECC error-correction.

The JEDEC specification JESD79-3 has always allowed an 8 Gb density for DDR3 memory devices. While most DRAM manufactures are waiting for a 2x nm process to fit such high memory capacity into a single DRAM IC package, I'M has developed its own a revolutionary way to manufacture 8 Gb DDR3 components with single chip-select utilizing existing 30 nm manufacturing technologies.

GeIL DDR4 Memory Smiles for the Camera

GeIL showed off its first DDR4 memory module, which will serve as a common platform for a number of the company's consumer memory lines. Depending on the DRAM chip density, the module will come in capacities of 4 GB, 8 GB, and 16 GB. The module voltage will stay at 1.2V, and it will come in clock speeds of 1600 MHz (CL 10~12), 1866 MHz (CL 12~14), 2133 MHz (CL 14~16), 2400 MHz (CL 15), 2666 MHz, and 3200 MHz. GeIL will craft out several models based on this common PCB.

Buffalo Announces DRAM-cached HD-PGDU3 External HDD

Buffalo announced a unique new external HDD, which it claims is the world's fastest. No, it doesn't embed an SSD, but a host-agnostic hot-data juggling system between a conventional hard drive (capacities of 500 GB and 1 TB), and 1 GB of DDR3 DRAM cache. As the drive powers up, frequently accessed data (hot-data), is copied onto the fast DRAM cache. As access frequencies of data on the HDD rise, they're juggled onto the cache.

An in-built lithium-ion battery ensures that there's no data loss when data is being juggled to and from the cache due to an abrupt disconnection; and it also ensures that hot-data stays on the DRAM for a few hours, even with the drive disconnected. An LED battery level meter keeps you updated on battery life. The battery recharges each time the drive is plugged in to the host. The drive uses USB 3.0 SuperSpeed interface, although there's no mention of UASP support. Under real-world circumstances, the DRAM-cached drive offers transfer rates of up to 400 MB/s. Measuring 81 mm x 18 mm x 133 mm (WxDxH), the drives weigh in at about 250 g.


Source: Hermitage Akihabara

HyperX Releases 'FURY' Memory Line

HyperX, a division of Kingston Technology Company, Inc., the independent world leader in memory products, today announced the launch of HyperX FURY memory for entry-level gamers and enthusiasts. HyperX FURY replaces the HyperX blu memory line. The new, next-generation high-performance memory offers automatic overclocking with an asymmetric, aggressive heatspreader design for the ultimate cost-efficient enthusiast computer experience.

HyperX FURY memory is fully Plug and Play (PnP) so it automatically overclocks within the system speed allowance without any manual BIOS tuning. The new heatspreader design comes in four colors (blue, black, red, and white) and features black PCB to enable gamers, modders and system builders to have color matched systems. HyperX FURY is available in 1333 MHz, 1600 MHz, and 1866 MHz frequencies.

Samsung Accelerates Ramp Up of DDR4 Production

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, said today that it is accelerating its production ramp up of DDR4 memory modules to accommodate an anticipated strong market demand along with the approaching introduction of the new Intel Xeon processor E5-2600 v3 product family. DDR4 is the most advanced memory for server and high-performance computing applications.

"At Samsung, we are taking the lead in readying the DDR4 market to coincide with the introduction of the next-generation Intel Xeon processor E5-2600 v3 product family, and plan to contribute to creating a bigger market for DRAM in the second half of 2014," said Jim Elliott, corporate vice president, Memory Marketing, Samsung Semiconductor, Inc. "We will continue to introduce high-density DDR4 modules for global OEMs that will facilitate the launch of next-generation enterprise servers and will maximize IT investment efficiency."

SK Hynix Developed the World's First Highest Density 128 GB DDR4 Module

SK Hynix Inc. announced that it has developed the world's first highest density of 128 GB (Gigabytes) module based on 8 Gb(Gigabit) DDR4 using its advanced 20 nm class technology.

This module has double density compared to existing 64 GB by taking advantage of TSV(Through Silicon Via) technology. This new product works at 2133 Mbps and with a 64-bit I/O it processes up to 17 GB of data per second. It also runs at ultra low-voltage of 1.2V which does at lower voltage than 1.35V of existing DDR3.

Micron Reports Results for the Second Quarter of Fiscal 2014

Micron Technology, Inc. today announced results of operations for its second quarter of fiscal 2014, which ended February 27, 2014. Revenues in the second quarter of fiscal 2014 were $4.11 billion and were 2 percent higher compared to the first quarter of fiscal 2014 and 98 percent higher compared to the second quarter of fiscal 2013.

GAAP Income and Per Share Data - On a GAAP basis, net income attributable to Micron shareholders in the second quarter of fiscal 2014 was $731 million, or $0.61 per diluted share, compared to net income of $358 million, or $0.30 per diluted share, in the first quarter of fiscal 2014 and a net loss of ($286) million, or ($0.28) per diluted share, in the second quarter of fiscal 2013.

Rambus and Nanya Sign Patent License Agreement

Rambus Inc., the innovative technology solutions company, and Nanya Technology Corporation, the industry leading pure-play consumer memory company, today announced they have signed a broad five-year patent license agreement. This agreement allows for the use of certain high-performance, low-power patented innovations developed by Rambus in Nanya DRAM products and enables future technology collaboration.

Under this agreement, Rambus and Nanya have settled all outstanding claims, providing Nanya with access to certain memory-related Rambus innovations through the second quarter of 2018. Other terms of the agreement are confidential.

Transcend Releases DDR3 RDIMM Modules for Apple Mac Pro

Transcend Information, Inc., a worldwide leader in storage and multimedia products, is proud to announce its launch of 16 GB and 32 GB DDR3 Registered DIMM (RDIMM) modules aimed at maximizing memory in Apple Mac Pro 2013 systems. With four user-upgradeable memory slots available, Transcend's latest high-performance DDR3 RDIMMs can boost Mac Pro 2013 Intel Xeon E5 3.5 GHz 6-Core, 3.0 GHz 8-Core, and 2.7 GHz 12-Core models to 64 GB, 96 GB, and even 128 GB total memory capacity.

"The new Mac Pro 2013 is advertised to support up to 64 GB of memory, and we understand that pro users running applications that place high demands on RAM have a need to meet and most likely exceed this threshold," said Angus Wu, Director of Research and Development at Transcend. "For this reason, we have developed and fully tested higher density modules to give users the option of raising their Mac Pro system memory to the advertised 64 GB right up to 128 GB."

Samsung Mass Producing Industry's Most Advanced 4 Gb DDR3, Using 20 nm Process

Samsung Electronics Co., Ltd., the world leader in memory technology, today announced that it is mass producing the most advanced DDR3 memory, based on a new 20 nanometer process technology, for use in a wide range of computing applications. Samsung has pushed the envelope of DRAM scaling, while utilizing currently available immersion ArF lithography, in its roll-out of the industry's most advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.

With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.

DRAM Price Fixing Case: Get a Piece of the $310 Million Settlement Pie

Did you buy computers or other consumer electronics with DRAM chips in it between 1998 and 2002? Chances are, that you've been done over by organized price-fixing by DRAM manufacturers that made computers and consumer electronics costlier than they should have been. An online claim portal sprung up in accordance with the ruling in the DRAM Indirect Purchaser Antitrust Litigation, which lets the general public (you) file a claim, seeking compensation from DRAM manufacturers.

A typical successful claim should entitle you to a compensation of $10, but in certain cases, the compensation can go as high as $1,000. Documentation (proof of purchase) is not required, but the site advises you to hold on to any documentation that you have, apart from the equipment itself. The litigation covers "indirect purchasers" only, which includes people who purchased pre-built PCs, laptops, mobile phones, game consoles, and graphics cards. People who directly purchased DRAM from DRAM makers (such as aftermarket DRAM modules), aren't eligible. However, you could argue in your claim that even while you purchased your modules from, say, OCZ, that company sourced DRAM chips from, say, Hyundai (Hynix) or Samsung, making it an "indirect purchase." Be imaginative. Get the online claims form, along with other FAQs here.
A video presentation follows.

AMD A-Series "Kaveri" Performs Better with Dual-Rank DIMMs: Report

AMD's A-Series "Kaveri" APUs perform tangibly better on system with dual-rank memory modules, according to an investigative report by ComputerBase.de. According to the report, the chip yields its best memory bandwidth when both its memory channels are populated with 2-rank DIMMs each. Either that, or four modules with one rank each. The report also found out that Kaveri can take advantage of DDR3-2400 as advertised. There was a 15.2 percent jump in performance between DDR3-1866 and DDR3-2400.

An unreliable way of checking whether a DIMM has two ranks is by looking at whether both sides of its PCB has DRAM chips; a reliable way of doing that, however, is using software such as AIDA64 (MotherboardSPD tab), which lists out number of ranks, and number of banks per rank; and of course, looking up the specs sheet. The reason visual inspection of a DIMM is not reliable these days is because of the way modern DRAM chips are designed. There are instances of DIMMs with chips on just one side, yet 2 ranks. Find more performance numbers at the source.


Source: ComputerBase.de
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