News Posts matching "DRAM"

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HyperX Releases 'FURY' Memory Line

HyperX, a division of Kingston Technology Company, Inc., the independent world leader in memory products, today announced the launch of HyperX FURY memory for entry-level gamers and enthusiasts. HyperX FURY replaces the HyperX blu memory line. The new, next-generation high-performance memory offers automatic overclocking with an asymmetric, aggressive heatspreader design for the ultimate cost-efficient enthusiast computer experience.

HyperX FURY memory is fully Plug and Play (PnP) so it automatically overclocks within the system speed allowance without any manual BIOS tuning. The new heatspreader design comes in four colors (blue, black, red, and white) and features black PCB to enable gamers, modders and system builders to have color matched systems. HyperX FURY is available in 1333 MHz, 1600 MHz, and 1866 MHz frequencies.

Samsung Accelerates Ramp Up of DDR4 Production

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, said today that it is accelerating its production ramp up of DDR4 memory modules to accommodate an anticipated strong market demand along with the approaching introduction of the new Intel Xeon processor E5-2600 v3 product family. DDR4 is the most advanced memory for server and high-performance computing applications.

"At Samsung, we are taking the lead in readying the DDR4 market to coincide with the introduction of the next-generation Intel Xeon processor E5-2600 v3 product family, and plan to contribute to creating a bigger market for DRAM in the second half of 2014," said Jim Elliott, corporate vice president, Memory Marketing, Samsung Semiconductor, Inc. "We will continue to introduce high-density DDR4 modules for global OEMs that will facilitate the launch of next-generation enterprise servers and will maximize IT investment efficiency."

SK Hynix Developed the World's First Highest Density 128 GB DDR4 Module

SK Hynix Inc. announced that it has developed the world's first highest density of 128 GB (Gigabytes) module based on 8 Gb(Gigabit) DDR4 using its advanced 20 nm class technology.

This module has double density compared to existing 64 GB by taking advantage of TSV(Through Silicon Via) technology. This new product works at 2133 Mbps and with a 64-bit I/O it processes up to 17 GB of data per second. It also runs at ultra low-voltage of 1.2V which does at lower voltage than 1.35V of existing DDR3.

Micron Reports Results for the Second Quarter of Fiscal 2014

Micron Technology, Inc. today announced results of operations for its second quarter of fiscal 2014, which ended February 27, 2014. Revenues in the second quarter of fiscal 2014 were $4.11 billion and were 2 percent higher compared to the first quarter of fiscal 2014 and 98 percent higher compared to the second quarter of fiscal 2013.

GAAP Income and Per Share Data - On a GAAP basis, net income attributable to Micron shareholders in the second quarter of fiscal 2014 was $731 million, or $0.61 per diluted share, compared to net income of $358 million, or $0.30 per diluted share, in the first quarter of fiscal 2014 and a net loss of ($286) million, or ($0.28) per diluted share, in the second quarter of fiscal 2013.

Rambus and Nanya Sign Patent License Agreement

Rambus Inc., the innovative technology solutions company, and Nanya Technology Corporation, the industry leading pure-play consumer memory company, today announced they have signed a broad five-year patent license agreement. This agreement allows for the use of certain high-performance, low-power patented innovations developed by Rambus in Nanya DRAM products and enables future technology collaboration.

Under this agreement, Rambus and Nanya have settled all outstanding claims, providing Nanya with access to certain memory-related Rambus innovations through the second quarter of 2018. Other terms of the agreement are confidential.

Transcend Releases DDR3 RDIMM Modules for Apple Mac Pro

Transcend Information, Inc., a worldwide leader in storage and multimedia products, is proud to announce its launch of 16 GB and 32 GB DDR3 Registered DIMM (RDIMM) modules aimed at maximizing memory in Apple Mac Pro 2013 systems. With four user-upgradeable memory slots available, Transcend's latest high-performance DDR3 RDIMMs can boost Mac Pro 2013 Intel Xeon E5 3.5 GHz 6-Core, 3.0 GHz 8-Core, and 2.7 GHz 12-Core models to 64 GB, 96 GB, and even 128 GB total memory capacity.

"The new Mac Pro 2013 is advertised to support up to 64 GB of memory, and we understand that pro users running applications that place high demands on RAM have a need to meet and most likely exceed this threshold," said Angus Wu, Director of Research and Development at Transcend. "For this reason, we have developed and fully tested higher density modules to give users the option of raising their Mac Pro system memory to the advertised 64 GB right up to 128 GB."

Samsung Mass Producing Industry's Most Advanced 4 Gb DDR3, Using 20 nm Process

Samsung Electronics Co., Ltd., the world leader in memory technology, today announced that it is mass producing the most advanced DDR3 memory, based on a new 20 nanometer process technology, for use in a wide range of computing applications. Samsung has pushed the envelope of DRAM scaling, while utilizing currently available immersion ArF lithography, in its roll-out of the industry's most advanced 20-nanometer (nm) 4-gigabit (Gb) DDR3 DRAM.

With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.

DRAM Price Fixing Case: Get a Piece of the $310 Million Settlement Pie

Did you buy computers or other consumer electronics with DRAM chips in it between 1998 and 2002? Chances are, that you've been done over by organized price-fixing by DRAM manufacturers that made computers and consumer electronics costlier than they should have been. An online claim portal sprung up in accordance with the ruling in the DRAM Indirect Purchaser Antitrust Litigation, which lets the general public (you) file a claim, seeking compensation from DRAM manufacturers.

A typical successful claim should entitle you to a compensation of $10, but in certain cases, the compensation can go as high as $1,000. Documentation (proof of purchase) is not required, but the site advises you to hold on to any documentation that you have, apart from the equipment itself. The litigation covers "indirect purchasers" only, which includes people who purchased pre-built PCs, laptops, mobile phones, game consoles, and graphics cards. People who directly purchased DRAM from DRAM makers (such as aftermarket DRAM modules), aren't eligible. However, you could argue in your claim that even while you purchased your modules from, say, OCZ, that company sourced DRAM chips from, say, Hyundai (Hynix) or Samsung, making it an "indirect purchase." Be imaginative. Get the online claims form, along with other FAQs here.
A video presentation follows.

AMD A-Series "Kaveri" Performs Better with Dual-Rank DIMMs: Report

AMD's A-Series "Kaveri" APUs perform tangibly better on system with dual-rank memory modules, according to an investigative report by ComputerBase.de. According to the report, the chip yields its best memory bandwidth when both its memory channels are populated with 2-rank DIMMs each. Either that, or four modules with one rank each. The report also found out that Kaveri can take advantage of DDR3-2400 as advertised. There was a 15.2 percent jump in performance between DDR3-1866 and DDR3-2400.

An unreliable way of checking whether a DIMM has two ranks is by looking at whether both sides of its PCB has DRAM chips; a reliable way of doing that, however, is using software such as AIDA64 (MotherboardSPD tab), which lists out number of ranks, and number of banks per rank; and of course, looking up the specs sheet. The reason visual inspection of a DIMM is not reliable these days is because of the way modern DRAM chips are designed. There are instances of DIMMs with chips on just one side, yet 2 ranks. Find more performance numbers at the source.


Source: ComputerBase.de

Toshiba Announces Slimmer 7 mm SSHD

Toshiba, a committed technology leader, announces the slim, 7mm MQ01ABF solid state hybrid drive (SSHD) series. Equipped with Toshiba's NAND flash and available in 500GB1 and 320GB capacities, the MQ01ABFH series is the first Toshiba SSHD drive family in 7 mm. The series continues Toshiba's legacy of providing world-class storage products, and offers customers a complete lineup of 2.5-inch solid state hybrid drives with the previously announced 1TB2 and 750GB MQ01ABDH series 9.5mm SSHDs for ultrathin and thin and light notebook PCs, multimedia and gaming applications, and traditional laptop PCs.

Drawing upon its knowledge and experience in NAND flash, Toshiba optimized the NAND flash performance into a tiered-storage approach that uses the speed of the DRAM and NAND components with the high-capacity of rotating media. The SSHD delivers SSD-like performance without dependence on external drivers or assistance from the host system. The PC Mark Vantage Score, the established industry method for measuring SSHD read/write performance and responsiveness, for the MQ01ABFH series is approximately 20,000, surpassing the 16,000 industry standard result.

Silicon Power Announces DDR3 Ultra Low Voltage Memory Modules

Silicon Power, the world's leading provider of memory storage solutions, today unveils the latest memory module solution, DDR3L-1333 and DDR3L-1600 Low-Voltage Series. Running at 1.35 volts at 1333 MHz and 1600 MHz, the Low-Voltage series is able to decrease hardware power consumption effectively without compromising the benefit of the performance. Apart from saving power from long-term operations, it also reduces the unnecessary heat waste, allowing advanced gamers, video and photo professionals and DIY enthusiasts to create an eco-friendly working stations.

Silicon Power Low-Voltage DDR3L series comes in selections from UDIMM to SO-DIMM at 1333 MHz and 1600 MHz, providing desktop and notebook users to save energy up to 20% from the benefits of low energy consumption. Moreover, this series is compatible with the latest Intel Haswell platform, ideal for those who are looking for a greener and power-saving alternative while enjoying the ultimate system performance.

KINGMAX Readies Full Gamut of Storage Solutions for Industrial Users

KINGMAX, a vertically integrated RAM/memory card module manufacturer, is happy to announce that it has developed a complete range of storage products catering specifically to the industrial PC sector. While the IPC and industrial control market is poised to grow further on the back of ever-expanding applications, KINGMAX will keep up its innovative R&D to meet the rapidly growing demand.

Leveraging more than 20 years of R&D and manufacturing expertise, KINGMAX now stands out as a premium one-stop supplier of industrial-grade FLASH storage products: SSDs, eMMC/eMCP/eSSDs, SD/CF cards and DRAMs. They not only come with state-of-the-art specifications but also have undergone the most stringent performance tests and safety verification.

Super Talent Expands Its NGFF SSD Lineup with PCIe DX1

Super Talent Technology, a leading manufacturer of NAND Flash storage solutions and DRAM memory modules, announces its Super Talent PCIe DX1 SSD. The Super Talent PCIe DX1 is 22.00mm x 80.00mm x 3.5mm. Although small in form factor, it is lightning quick when it comes to speed to match and satisfy the demands of a server or mobile environment. Next generation mobile computing can take full advantage of performance with these space saving SSDs. The 128 MB internal cache on the Super Talent PCIe DX1 further speeds up application load times and the overall unit is easily mounted without any cables.

ADATA Announces Market Availability of DashDrive Elite SE720

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, has launched an ultra-thin external solid state drive (SSD) with a SuperSpeed USB interface. Named the DashDrive Elite SE720, it combines the slim stainless steel chassis of the company's award-winning DashDrive Elite HE720 portable hard drive, with the performance of ADATA's market-proven NAND Flash storage solutions.

The advantages of SSDs include high shock resistance, noiseless operation, and low-power consumption. When these features are implemented in a portable USB 3.0 device, the result is a remarkably durable storage option with speeds that far outpace those of mechanical HDDs. The SE720 has read speeds up to 400 MB/sec, and write speeds of up to 300 MB/sec.

Micron Technology Reports Results for the Fourth Quarter of Fiscal 2013

Micron Technology, Inc., today announced results of operations for its fourth quarter and 2013 fiscal year, which ended August 29, 2013. For the fourth quarter, the company had net income attributable to Micron shareholders of $1.71 billion, or $1.51 per diluted share, on net sales of $2.8 billion. The results for the fourth quarter of fiscal 2013 compare to net income of $43 million, or $0.04 per diluted share, on net sales of $2.3 billion for the third quarter of fiscal 2013, and a net loss of $243 million, or ($0.24) per diluted share, on net sales of $2.0 billion for the fourth quarter of fiscal 2012.

For the 2013 fiscal year, the company had net income attributable to Micron shareholders of $1.19 billion, or $1.13 per diluted share, on net sales of $9.1 billion. Cash flows from operations were $1.8 billion for fiscal 2013. The results for fiscal 2013 compare to a net loss of $1.03 billion, or ($1.04) per diluted share, on net sales of $8.2 billion for the 2012 fiscal year.

Micron Technology Ships First Samples of Hybrid Memory Cube

Micron Technology, Inc., announced today that it is shipping 2GB Hybrid Memory Cube (HMC) engineering samples. HMC represents a dramatic step forward in memory technology, and these engineering samples are the world's first HMC devices to be shared broadly with lead customers. HMC is designed for applications requiring high-bandwidth access to memory, including data packet processing, data packet buffering or storage, and computing applications such as processor accelerators. Micron expects future generations of HMC to migrate to consumer applications within three to five years.

An industry breakthrough, HMC uses advanced through-silicon vias (TSVs)-vertical conduits that electrically connect a stack of individual chips-to combine high-performance logic with Micron's state-of-the-art DRAM. Micron's HMC features a 2GB memory cube that is composed of a stack of four 4Gb DRAM die. The solution provides an unprecedented 160 GB/s of memory bandwidth while using up to 70 percent less energy per bit than existing technologies, which dramatically lowers customers' total cost of ownership (TCO).

Transcend Introduces High Performance Server Memory

Transcend Information, Inc. (Transcend), a worldwide leader in storage and multimedia products, today announced the arrival of its 8 GB DDR3L-1600 Low Voltage 1.35V RDIMM memory module. Aimed at improving high performance data mining and big data analytics, the DDR3 Low Voltage RDIMM allows enterprises to address the challenges of server memory density, performance, and power consumption.

Strong demand for data center services continues to grow as more organizations are taking advantage of the huge and highly available computing and storage resources of cloud and virtualization systems. However, the success of implementing these technologies rests on the ability to quickly load applications and easily process information.

Micron and Intel Collaborate on Security Feature for Ultrathin Devices

Micron Technology, Inc., (Nasdaq:MU) today announced the availability of a replay-protected monotonic counter (RPMC) feature for their SPI NOR Flash memory devices, which are validated for future Intel Ultrabook platforms. The cost-effective 64Mb density is the sweet-spot solution currently available for immediate platform-enablement activities.

The RPMC feature in Micron's SPI NOR device is the first in a family of cryptographic primitives that will significantly enhance preboot security in cost-sensitive embedded, mobile, and personal computing architectures. The RPMC-enabled device facilitates critical nonvolatile data storage, while making systems resistant to rollback and replay attacks. It enables original equipment manufacturers (OEMs) to further strengthen code/data storage in the boot memory and deliver more secure systems to customers.
Micron's 64Mb RPMC-enabled SPI NOR device supports nonvolatile storage and authentication needs that are critical to the chipset security implementation for future Intel Ultrabook platforms and is compliant with Intel's Serial Flash Hardening Product External Architecture Specification. The device, which is available in SO8W and W-DFN 0.8mm packages, also includes improved erase performance to increase throughput and lower the initial cost of manufacturing programming.

ADATA Launches New Generation DDR4 DRAM Modules

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash storage application products, announced today that the company's new generation DDR4 SDRAM modules will be on display at the Intel Developer Forum 2013 (IDF13), held this year in San Francisco. Targeting server and render farm applications, the new DDR4 modules show that ADATA is once again at the front of the pack in providing new high-performance solutions to the enterprise market.

DDR4 SDRAM stands for double data rate fourth generation synchronous dynamic random-access memory, and its most notable features are faster clock frequencies and data transfer rates as compared to DDR3, as well as low power consumption. Running at just 1.2 volts, these new modules are expected to achieve transfer rates of 3.2Gbps, at frequencies as high as 2133MHz, far outstripping the capabilities of previous generations of DRAM. In large scale server applications, the advantages of DDR4 will lead to lower costs and greatly improved overall system performance. The new DDR4 SDRAM modules will be showcased along with the company's other premium memory solutions at booth number 554 at IDF13.

KingSpec 2.5 GB/s PCIe SSD Detailed

In the swarming SSD market, what better way to blast your way from obscurity to worldwide attention, than launching a ludicrously fast SSD? KingSpec unveiled the MC2J677M1T, a PCI-Express SSD that's tested to be capable of sequential speeds as high as 2.5 GB/s (gigabytes per second). Pictured below, the drive is an almost full-height add-on card with PCI-Express 2.0 x8 bus interface. The card seats a high performance SATA 6 Gb/s RAID controller by LSI (under that fan-heatsink), which is wired to eight mSATA 6 Gb/s ports, holding the eight sub-units.

The eight mSATA SSD sub-units on the MC2J677M1T each hold 120 GB of data (totaling 960 GB). Each sub-unit runs a JMicron-made controller, Intel-made MLC NAND flash, and Nanya-made DRAM cache. The LSI RAID controller is designed to be plug-and-play, i.e., the drive is bootable, and you won't need an F6 driver during Windows installation to detect the drive. A quick ATTO benchmark run by TheSSDReview, which has one of these drives, yielded sequential read speeds well past 2,500 MB/s.


Source: TheSSDReview

Samsung Now Mass Producing Industry's Most Advanced DDR4

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is mass producing the most advanced DDR4 memory, for enterprise servers in next-generation data centers.

With the introduction of these high-performance, high-density DDR4 modules, Samsung can better support the need for advanced DDR4 in rapidly expanding, large-scale data centers and other enterprise server applications.

Super Talent USB 3.0 Express DRAMDisk Now Available

Super Talent Technology, a leading manufacturer of NAND flash storage solutions, today announces the availability of the long awaited USB 3.0 Express DramDisk. With sequential read scores of up to 4041 MB/s and sequential write scores of up to 5388 MB/s, the USB 3.0 Express DramDisk is a speed demon of a drive housed in a sleek aluminum casing. The USB 3.0 Express DramDisk and its unique built-in software utilizes your computer's available RAM to transfer files at an amazingly quick rate. Software is included.

This USB also transfers files while you are using the program, cutting down on wait time later. A productivity gem for creative professionals whose daily regime relies upon constantly moving files on-the-go-cutting their valued time in half.

Micron Announces The Finalization Of Elpida Takeover

Micron Technology, Inc. (Nasdaq:MU) ("Micron") and Elpida Memory, Inc. ("Elpida") trustees announced today the closing of Micron's acquisition of 100 percent of Elpida's equity, pursuant to a Sponsor Agreement entered into on July 2, 2012 in connection with Elpida's corporate reorganization proceedings conducted under the jurisdiction of the Tokyo District Court. In a related transaction, Micron also announced today the completion of its acquisition of a 24 percent share of Rexchip Electronics Corporation from Powerchip Technology Corporation and certain of its affiliates. The transactions will be recorded for accounting purposes as being effective at 11:59 p.m., Tokyo time, on July 31, 2013.

Elpida's assets include a 300 millimeter (mm) DRAM fabrication facility located in Hiroshima, Japan; an approximate 65 percent ownership interest in Rexchip, whose assets include a 300mm DRAM fabrication facility located in Taiwan; and a 100 percent ownership interest in Akita Elpida Memory, Inc., whose assets include an assembly and test facility located in Akita, Japan. Together with the Rexchip shares acquired from Powerchip, Micron will control approximately 89 percent of Rexchip's outstanding shares and 100 percent of Rexchip product supply. The manufacturing assets of Elpida and Rexchip together can produce more than 185,000 300mm wafers per month, which represents an approximate 45 percent increase in Micron's current manufacturing capacity.

ADATA Launches Newest XPG V2 3100 Overclocking Memory

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, announced today the launch of the latest XPG V2 series overclocking memory, running at a stellar 3100 megahertz. This new product's dual channel is designed to bring ultimate performance to gamers using Intel Core fourth-generation processors and the latest Z87 platform.

The XPG 3100 V2 is the result of special cooperation with Asrock, and suitable for all motherboards that employ the enthusiast oriented Z87 chipset. Due to strict compatibility testing and QVL (Qualified Vendor List) certification, the modules can be directly overclocked using XMP (EXtreme Memory Profile) to the highest frequency of 3100Mhz. This unprecedented speed will gratify those who always seek an edge in boosting system performance.

SK Hynix Memory Solutions Announces Dr. Khandker Nazrul Quader as CEO

SK hynix memory solutions (SKHMS) is pleased to announce that Dr. Khandker Nazrul Quader has joined SKHMS as President and CEO effective June 21, 2013. "It has been nearly one year since SK hynix acquired controller expertise through the acquisition of Link-A-Media Devices, now SK hynix memory solutions (SKHMS)," stated Dr. Park, President and CEO of SK hynix and Chairman of the Board of SKHMS. "The addition of Dr. Quader's leadership with his extensive background in NAND technology and design, Advanced Non-volatile memories and DRAM storage technologies and his extensive experience and expertise in Multi-level Flash memory management systems will further leverage the value of the SKHMS team, especially at this time of significant market growth in the areas of Flash memory based storage solutions. It is my pleasure to welcome Dr. Quader as part of SK family."

"I'm very excited to join and lead the SKHMS (formerly Link-A-Media) team at a time when the flash memory industry is poised for phenomenal growth in SSD and mobile markets," said Dr. Quader. "The integration of the controller solution know-how of SKHMS combined with the Advanced Non-volatile memories and DRAM technologies and the manufacturing capabilities of SK hynix is producing leading-edge products across multiple market segments. Full vertical integration of controller hardware, advanced flash memory systems architecture, firmware, NAND, other forms of non-volatile memory, and DRAM coupled with high volume memory manufacturing capability is quite rare in the industry and allows our customers to have a one-stop storage solution provider with the capacity, support and expertise the industry demands. The combined focus of SK hynix and SKHMS provides excellent opportunity to become a market leader in Enterprise, Client and Mobile storage."
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