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GLOBALFOUNDRIES Achieves 14nm FinFET Technology Success for Next-Gen AMD Product

GLOBALFOUNDRIES today announced it has demonstrated silicon success on the first AMD (NASDAQ: AMD) products using GLOBALFOUNDRIES' most advanced 14nm FinFET process technology. As a result of this milestone, GLOBALFOUNDRIES' silicon-proven technology is planned to be integrated into multiple AMD products that address the growing need for high-performance, power-efficient compute and graphics technologies across a broad set of applications, from personal computers to data centers to immersive computing devices.

AMD has taped out multiple products using GLOBALFOUNDRIES' 14nm Low Power Plus (14LPP) process technology and is currently conducting validation work on 14LPP production samples. Today's announcement represents another significant milestone towards reaching full production readiness of GLOBALFOUNDRIES' 14LPP process technology, which will reach high-volume production in 2016. The 14LPP platform taps the benefits of three-dimensional, fully-depleted FinFET transistors to enable customers like AMD to deliver more processing power in a smaller footprint for applications that demand the ultimate in performance.

GLOBALFOUNDRIES Launches Industry's First 22nm FD-SOI Technology Platform

GLOBALFOUNDRIES today launched a new semiconductor technology developed specifically to meet the ultra-low-power requirements of the next generation of connected devices. The "22FDX" platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28 nm planar technologies, providing an optimal solution for the rapidly evolving mainstream mobile, Internet-of-Things (IoT), RF connectivity and networking markets.

While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides the best path for cost-sensitive applications by leveraging the industry's first 22nm two-dimensional, fully-depleted silicon-on-insulator (FD-SOI) technology. It offers industry's lowest operating voltage at 0.4 volt, enabling ultra-low dynamic power consumption, less thermal impact, and smaller end-product form-factors. The 22FDX platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.

"The 22FDX platform enables our customers to deliver differentiated products with the best balance of power, performance and cost," said Sanjay Jha, chief executive officer of GLOBALFOUNDRIES. "In an industry first, 22FDX provides real-time system software control of transistor characteristics: the system designer can dynamically balance power, performance, and leakage. Additionally, for RF and analog integration, the platform delivers best scaling combined with highest energy efficiency."

GLOBALFOUNDRIES Completes Acquisition of IBM Microelectronics Business

GLOBALFOUNDRIES today announced that it has completed its acquisition of IBM's Microelectronics business. With the acquisition, GLOBALFOUNDRIES gains differentiated technologies to enhance its product offerings in key growth markets, from mobility and Internet of Things (IoT) to Big Data and high-performance computing. The deal strengthens the company's workforce, adding decades of experience and expertise in semiconductor development, device expertise, design, and manufacturing. And the addition of more than 16,000 patents and applications makes GLOBALFOUNDRIES the holder of one of the largest semiconductor patent portfolios in the world.

"Today we have significantly enhanced our technology development capabilities and reinforce our long-term commitment to investing in R&D for technology leadership," said Sanjay Jha, chief executive officer of GLOBALFOUNDRIES. "We have added world-class technologists and differentiated technologies, such as RF and ASIC, to meet our customers' needs and accelerate our progress toward becoming a foundry powerhouse." Through the addition of some of the brightest and most innovative scientists and engineers in the semiconductor industry, GLOBALFOUNDRIES solidifies its path to advanced process technologies at 10 nm, 7 nm, and beyond.

GLOBALFOUNDRIES To Acquire IBM's Microelectronics Business

IBM and GLOBALFOUNDRIES today announced that they have signed a Definitive Agreement under which GLOBALFOUNDRIES plans to acquire IBM's global commercial semiconductor technology business, including intellectual property, world-class technologists and technologies related to IBM Microelectronics, subject to completion of applicable regulatory reviews. GLOBALFOUNDRIES will also become IBM's exclusive server processor semiconductor technology provider for 22 nanometer (nm), 14 nm and 10 nm semiconductors for the next 10 years.

The Agreement, once closed, enables IBM to further focus on fundamental semiconductor research and the development of future cloud, mobile, big data analytics, and secure transaction-optimized systems. IBM continues its previously announced $3 billion investment over five years for semiconductor technology research to lead in the next generation of computing. GLOBALFOUNDRIES will have primary access to the research that results from this investment through joint collaboration at the Colleges of Nanoscale Science and Engineering (CNSE), SUNY Polytechnic Institute, in Albany, N.Y.

GLOBALFOUNDRIES Names Tom Caulfield as GM of its New York Fab

GLOBALFOUNDRIES, a leading provider of advanced semiconductor manufacturing technology, today appointed Dr. Thomas Caulfield as senior vice president and general manager of the company's latest leading-edge 300mm semiconductor wafer manufacturing facility (Fab 8), located in Saratoga County, NY. Caulfield, an accomplished industry leader with more than 20 years of technical and global executive experience, will lead the operations, expansion and ramp of semiconductor manufacturing production at Fab 8, where GLOBALFOUNDRIES supports customers on the world's most advanced semiconductor manufacturing technology platforms including 28 nanometer (nm), 20 nm, and the recently announced 14 nm FinFET platform.

"We are expanding our Fab 8 manufacturing campus, strengthening strategic partnerships, and deepening customer relationships so we can offer our customers leading-edge technology and a more flexible and cost-effective way of doing business," said GLOBALFOUNDRIES CEO Sanjay Jha. "Tom is a proven and respected industry leader with more than two decades of semiconductor technology and manufacturing experience and we are excited to have him join our team to drive the next phase of growth at Fab 8."

Toshiba Joins GLOBALSOLUTIONS Ecosystem as Worldwide ASIC Partner

GLOBALFOUNDRIES today announced that Toshiba Corporation will join the company's GLOBALSOLUTIONS ecosystem of partners. As a worldwide ASIC partner, Toshiba will enable its Fit Fast Structured Array (FFSA) and ASIC solutions based upon GLOBALFOUNDRIES' technologies and services for customers across the globe. The agreement includes participation on multi-project wafer (MPW) runs and production wafers covering the whole portfolio of GLOBALFOUNDRIES technologies, including leading-edge process nodes.

Initially, the partnership will focus on implementations of Toshiba's FFSAs manufactured with GLOBALFOUNDRIES' 65nm and 40nm low-power process technologies, with 28nm arrays to follow. Toshiba's FFSA products-including libraries and intellectual property (IP)-allow customers to reduce development time and costs by customizing existing base wafers, choosing from a number of design platforms at GLOBALFOUNDRIES. For higher-volume applications, customers can work with Toshiba's libraries to develop fully custom system-on-chips (SoCs). With an initial product completed, customers can then leverage the embedded FFSA technology to provide quick-turn derivative products, with much lower development costs.

Samsung and GLOBALFOUNDRIES to Deliver Multi-Sourced 14 nm FinFET Offering

Samsung Electronics Co., Ltd. and GLOBALFOUNDRIES today announced a new strategic collaboration to deliver global capacity for 14 nanometer (nm) FinFET process technology. For the first time, the industry's most advanced 14 nm FinFET technology will be available at both Samsung and GLOBALFOUNDRIES, giving customers the assurance of supply that can only come from true design compatibility at multiple sources across the globe.

The new collaboration will leverage the companies' worldwide leading-edge semiconductor manufacturing capabilities, with volume production at Samsung's fabs in Hwaseong, Korea and Austin, Texas, as well as GLOBALFOUNDRIES' fab in Saratoga, New York.

AMD Amends Wafer Supply Agreement With GLOBALFOUNDRIES

AMD today announced that it amended its Wafer Supply Agreement (WSA) with GLOBALFOUNDRIES Inc. for 2014. Under the terms of the amendment, AMD and GLOBALFOUNDRIES agreed on purchase commitments for 2014 and established fixed pricing and other terms of the WSA which apply to products AMD will purchase from GLOBALFOUNDRIES.

Under this amendment AMD expects to pay GLOBALFOUNDRIES approximately $1.2 billion in 2014. These purchases contemplate AMD's current PC market expectations and the manufacturing of certain Graphics Processor Units (GPUs) and semi-custom game console products at GLOBALFOUNDRIES in 2014. The 2014 amendment does not impact AMD's 2014 financial goals including gross margin.

Toshiba to Collaborate with GLOBALFOUNDRIES on FFSA Manufacturing

Toshiba Corporation today announced that the company will collaborate with GLOBALFOUNDRIES in the manufacture of Toshiba's FFSA (Fit Fast Structured Array) products. Toshiba will expand its FFSA business through production at GLOBALFOUNDRIES's fabs. Initial products will be manufactured using GLOBALFOUNDRIES 65nm-LPe and 40nm-LP processes, with plans to extend the collaboration to the company's 28nm High-K Metal Gate (HKMG) technology.

Toshiba's FFSA products, developed in collaboration with BaySand Inc. of the U.S., can be configured simply by customizing the design of a few metal layers. This customization process secures a much shorter development turn-around-time than with conventional ASIC devices, and satisfies increasing market needs for high performance, high specifications and low power technologies. At a time of ever-shorter product life cycles, time available for development is at a premium, and solutions that meet demand and allow tweaking of the specifications until just before the start of trial production increase the freedom and flexibility of developers.

GLOBALFOUNDRIES Announces New Chief Executive to Lead Next Phase of Growth

Building on the successful track record of its first five years in the semiconductor industry and its continued commitment to build out its global network of manufacturing facilities, GLOBALFOUNDRIES announced today, from its new offices in Silicon Valley, Sanjay Jha has been appointed as the company's new Chief Executive Officer. Jha has served as CEO of Motorola Mobility Inc. and as the COO of Qualcomm Inc.

Ajit Manocha, who served as an advisor to the company's shareholder prior to being appointed CEO of GLOBALFOUNDRIES in mid-2011, will return to that role and will work closely with Jha on his transition.

Micron Technology Appoints Rajan Rajgopal as Vice President of Quality

Micron Technology, Inc. (Nasdaq:MU), today announced that the company has named Rajan Rajgopal, vice president of Quality. Rajgopal will be responsible for overseeing all aspects of Micron's quality systems including manufacturing, customer program management and product ramps. He brings more than 25 years of experience to Micron and most recently served as the vice president of Global Quality and Customer Enablement for GLOBALFOUNDRIES in Singapore.

"Micron continues to evolve as a memory business driven by systems-level solutions, and quality plays a heightened role in serving our valued customers," said Micron President Mark Adams. "We are excited to have Rajan join our team and leverage his experience in serving our customers in an increasingly diversified set of application segments."

RockChip Builds SoCs on GlobalFoundries' 28 nm HKMG Process

GLOBALFOUNDRIES and Fuzhou Rockchip Electronics Co., Ltd. today announced that Rockchip's next-generation mobile processors are ramping to production on GLOBALFOUNDRIES' 28 nm High-K Metal Gate (HKMG) process technology. Based on a multi-core ARM Cortex-A9 design, the RK3188 and RK3168 chips are optimized for tomorrow's high-performance, low-cost tablets that require long-lasting battery life (see product specifications in annex).

The combination of Rockchip's design and GLOBALFOUNDRIES' 28 nm HKMG process technology resulted in a mainstream tablet System-on-Chip (SoC) capable of operating at up to 1.8 GHz performance, while still maintaining the power efficiency expected by mobile device users. The chips began sampling to OEMs in early 2013 and are now ramping to support a wide range of manufacturers.

GLOBALFOUNDRIES Accelerates Adoption of 20nm-LPM and 14nm-XM FinFET Processes

At next week's 50th Design Automation Conference (DAC) in Austin, Texas, GLOBALFOUNDRIES will unveil a comprehensive set of certified design flows to support its most advanced manufacturing processes. The flows, jointly developed with the leading EDA providers, offer robust support for implementing designs in the company's 20nm low power process and its leading-edge 14nm-XM FinFET process. Working closely with Cadence Design Systems, Mentor Graphics and Synopsys, GLOBALFOUNDRIES has developed the flows to address the most pressing design challenges, including support for analog/mixed signal (AMS) design, and advanced digital designs, both with demonstration of the impact of double patterning on the flow.

The GLOBALFOUNDRIES design flows work with its process design kits (PDKs) to provide real examples that demonstrate the entire flow. The user can download the design database, the PDK, detailed documentation and multi-vendor scripts to learn how to set up and use the GLOBALFOUNDRIES design flow. The flows use open source examples and provide the customer with working, executable and customizable flows.

Globalfoundries and Infineon Collaborate for 40 nm Embedded Flash Process

Infineon Technologies and GLOBALFOUNDRIES Inc. today announced a joint technology development and production agreement for 40 nanometer (nm) embedded flash (eFlash) process technology. The cooperation will focus on technology development based on Infineon's eFlash cell design and manufacturing of automotive and security microcontrollers (MCUs) with 40nm process structures. Production of the next generation 40nm eFlash MCUs will take place at different GLOBALFOUNDRIES sites, initially in Singapore with subsequent transfer to its site in Dresden, Germany.

"Next generation embedded Flash microcontrollers with 40nm process structures will further enhance our competitive strength in the automotive as well as chip card and security markets," says Arunjai Mittal, Member of the Management Board of Infineon Technologies. "We trust in GLOBALFOUNDRIES with their excellent manufacturing background and sites on different continents to fulfill Infineon's stringent quality, infrastructure security and business continuity requirements."

AMD Reports 2013 First Quarter Results

AMD (NYSE:AMD) today announced revenue for the first quarter of 2013 of $1.09 billion, an operating loss of $98 million and a net loss of $146 million, or $0.19 per share. The company reported a non-GAAP operating loss of $46 million and a non-GAAP net loss of $94 million, or $0.13 per share.

"Our first quarter results reflect our disciplined operational execution in a difficult market environment," said Rory Read, AMD president and CEO. "We have largely completed our restructuring and are now focused on delivering a powerful set of new products that will accelerate our business in 2013. We will continue to diversify our portfolio and attack high-growth markets like dense server, ultra low-power client, embedded and semi-custom solutions to create the foundation for sustainable financial returns."

Hybrid Memory Cube Consortium Finalizes Specifications

More than 100 developer and adopter members of the Hybrid Memory Cube Consortium (HMCC) today announced they've reached consensus for the global standard that will deliver a much-anticipated, disruptive memory computing solution. Developed in only 17 months, the final specification marks the turning point for designers in a wide range of segments-from networking and high-performance computing, to industrial and beyond-to begin designing Hybrid Memory Cube (HMC) technology into future products.

A major breakthrough with HMC is the long-awaited utilization of advanced technologies to combine highperformance logic with state-of-the-art DRAM. With this first HMC milestone reached so quickly, consortium members have elected to extend their collaborative effort to achieve agreement on the next generation of HMC interface standards.

GLOBALFOUNDRIES Demonstrates 3D TSV Capabilities on 20nm Technology

GLOBALFOUNDRIES today announced the accomplishment of a key milestone in its strategy to enable 3D stacking of chips for next-generation mobile and consumer applications. At its Fab 8 campus in Saratoga County, N.Y., the company has demonstrated its first functional 20nm silicon wafers with integrated Through-Silicon Vias (TSVs). Manufactured using GLOBALFOUNDRIES' leading-edge 20nm-LPM process technology, the TSV capabilities will allow customers to stack multiple chips on top of each other, providing another avenue for delivering the demanding performance, power, and bandwidth requirements of today's electronic devices.

TSVs are vertical vias etched in a silicon wafer that are filled with a conducting material, enabling communication between vertically stacked integrated circuits. The adoption of three-dimensional (3D) chip stacking is increasingly being viewed as an alternative to traditional technology node scaling at the transistor level. However, TSVs present a number of new challenges to semiconductor manufacturers.

GLOBALFOUNDRIES Offers Enhanced 55 nm CMOS Logic Process

GLOBALFOUNDRIES today announced additional enhancements to the foundry's 55-nanometer (nm) Low-Power Enhanced (LPe) process technology platform – 55nm LPe 1V – with qualified, next-generation memory and logic IP solutions from ARM. The 55nm LPe 1V is the industry's first and only enhanced process node to support ARM's 1.0/1.2V physical IP library, enabling chip designers to use a single process that supports two operating voltages in a single SoC.

"The key advantage of this 55nm LPe 1V offering is that the same design libraries can be used whether you are designing at 1.0 voltage or 1.2 voltage power option," said Bruce Kleinman, Vice President of Product Marketing at GLOBALFOUNDRIES. "What it means is that same set of design rules and models can be adopted, with no extra mask layer or special process required. This translates into cost saving and design flexibility without compromising on the power and optimization features."

Rambus Introduces R+ LPDDR3 Memory Architecture Solution

Rambus Inc., the innovative technology solutions company that brings invention to market, today announced its first LPDDR3 offering targeted at the mobile industry. In the Rambus R+ solution set, the R+ LPDDR3 memory architecture is fully compatible with industry standards while providing improved power and performance. This allows customers to differentiate their products in a cost-effective manner with improved time-to-market. Further helping improve design and development cycles, the R+ LPDDR3 is also available with Rambus' collaborative design and integration services.

The R+ LPDDR3 architecture includes both a controller and a DRAM interface and can reduce active memory system power by up to 25% and supports data rates of up to 3200 megabits per second (Mbps), which is double the performance of existing LPDDR3 technologies. These improvements to power efficiency and performance enable longer battery life and enhanced mobile device functionality for streaming HD video, gaming and data-intensive apps.

Nitero Demos 60 GHz Wi-Fi Solution on GLOBALFOUNDRIES' 65 nm-LPe RF Technology

Today at the 2013 Consumer Electronics Show (CES), Nitero, a fabless semiconductor company developing next-generation Wi-Fi solutions for mobile devices, demonstrated its innovative 60 GHz Wi-Fi solution manufactured on GLOBALFOUNDRIES' 65 nanometer (nm) Low Power Enhanced (LPe) RF platform optimized for mobile SoC applications.

Nitero's 60 GHz solution, which complements and completes today's Wi-Fi solutions such as 802.11n and 802.11ac, eliminates the need for physical connectors and their cables, dramatically increasing ease-of-use in tablet and handset devices. The company's multi-gigabit, ultra-low power Wi-Fi solution allows consumers to enjoy the same capabilities and flexibility of high-end notebook computers in the convenient portability of a mobile device. Compliant with the now IEEE ratified 802.11ad industry standard, Nitero plans for its upcoming solution to be Wi-Fi CERTIFIED for popular solutions from the Wi-Fi Alliance such as Wi-Fi Direct and Miracast.

GLOBALFOUNDRIES to Build R&D Facility in New York

GLOBALFOUNDRIES today announced plans to build a new global R&D facility at its Fab 8 campus in Saratoga County, N.Y. The new Technology Development Center (TDC) is expected to play a key role in the company's strategy to develop innovative semiconductor solutions allowing customers to compete at the leading edge of technology.

The TDC will feature more than a half million square feet of flexible space to support a range of technology development and manufacturing activities, including cleanroom and laboratory space. Representing an investment of nearly $2 billion, the facility will increase the total capital investment for the Fab 8 campus to more than $8 billion. Construction of the TDC is planned to begin in early 2013 with completion targeted for late 2014. Since breaking ground on Fab 8 in 2009, GLOBALFOUNDRIES has created approximately 2,000 new direct jobs and that number is expected to grow by another 1,000 employees for a total of about 3,000 new jobs by the end of 2014.

AMD Amends Wafer Supply Agreement With GLOBALFOUNDRIES

AMD today announced that it successfully amended its Wafer Supply Agreement (WSA) with GLOBALFOUNDRIES Inc.
The closure of amendment negotiations solidifies AMD's new operating model as communicated at the third quarter 2012 earnings announcement.

To better align with today's PC market dynamics, AMD and GLOBALFOUNDRIES agreed on purchase commitments for fourth quarter 2012 and established fixed pricing and other terms of the WSA which apply to products AMD will purchase from GLOBALFOUNDRIES through Dec. 31, 2013.

GLOBALFOUNDRIES, IBM, Intermolecular Collaborate to Speed Advanced Logic Development

Intermolecular, Inc. today announced that GLOBALFOUNDRIES and IBM will leverage Intermolecular's High Productivity Combinatorial (HPC) technology, as the companies work to speed development of manufacturing technologies down to the 10 nm node.

Intermolecular's combinatorial technology allows many more tests to be done using a single wafer. This enables experimental data to be generated and analyzed with significantly greater speed and efficiency than a traditional development line, accelerating innovation in materials, processes, and device architectures.

GLOBALFOUNDRIES Unveils FinFET Transistor Architecture for Next-Gen Mobile Devices

GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company's 14nm-XM offering will give customers the performance and power benefits of three-dimensional "FinFET" transistors with less risk and a faster time-to-market, helping the fabless ecosystem maintain its leadership in mobility while enabling a new generation of smart mobile devices.

The XM stands for "eXtreme Mobility," and it is the industry's leading non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60% improvement in battery life when compared to today's two-dimensional planar transistors at the 20 nm node.

GLOBALFOUNDRIES Appoints Joe Chen as New Sales Head for Greater China

GLOBALFOUNDRIES today announced that Joe Chen has been appointed as the new Vice President of Sales for the Greater China region, joining the company from Marvell Technology, a leading provider of storage, communications and consumer semiconductor products.

“Joe will play a key role in driving our sales strategy in the growing markets in Asia”
In this role, Chen will be responsible for sales in the Greater China region consisting of China and Taiwan. He will build and mentor a top-quality regional sales team, and grow and maintain successful and trusted partnerships with existing and new customers to expand the company’s market share in Asia. Chen reports to Chuck Fox, Senior Vice President of Worldwide Sales at GLOBALFOUNDRIES.
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