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Intel and Micron develop first-ever 128 Gb NAND Flash memory chip

Flash buddies Intel and Micron have today announced a significant breakthrough in terms of NAND density, the first 128 Gb (16 GB) MLC NAND memory chip. Manufactured on 20 nm process technology, this 128 Gb chip complies with the ONFI 3.0 specification (enabling speeds of up to 333 megatransfers per second) and can be used for new, high-capacity solid state drives, as well as for next-generation tablets, smartphones and other portable devices.

According to Intel and Micron, this milestone was made possible by the use of a new, innovative cell structure that 'breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.'

Intel, Micron Extend NAND Flash Technology Leadership, Introduce 20 nm NAND Flash

Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).

The growth in data storage combined with feature enhancements for tablets and smartphones is creating new demands for NAND flash technology, especially greater capacity in smaller designs. The new 20nm 8GB device measures just 118mm² and enables a 30 to 40 percent reduction in board space (depending on package type) compared to the companies' existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.
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