News Posts matching "LPDDR3"

Return to Keyword Browsing

Samsung Now Mass Producing Industry's First 20-Nanometer 6Gb LPDDR3 Mobile DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing its six gigabit (Gb) low-power double data rate 3 (LPDDR3) mobile DRAM, based on advanced 20 nanometer (nm) process technology. The highly-efficient new mobile memory chip will enable longer battery run-time and faster application loading on large screen mobile devices with higher resolution.

"Our new 20nm 6Gb LPDDR3 DRAM provides the most advanced mobile memory solution for the rapidly expanding high-performance mobile DRAM market," said Jeeho Baek, vice president, memory marketing, Samsung Electronics. "We are working closely with our global customers to offer next-generation mobile memory solutions that can be applied to a more extensive range of markets ranging from the premium to standard segments."

Samsung's new 6Gb LPDDR3 has a per-pin data transfer rate of up to 2,133 megabits per second (Mbps). A 3GB (gigabyte) LPDDR3 package, which consists of four 6Gb LPDDR3 chips, can be easily created for use in a wide range of mobile devices. Also, the package greatly strengthens our product portfolio for premium mobile applications.

How Intel Plans to Transition Between DDR3 and DDR4 for the Mainstream

The transition between DDR2 and DDR3 system memory types was slower than the one between DDR and DDR2. DDR3 made its mainstream debut with Intel's X38 and P35 Express platforms, at a time when the memory controller was still within the domain of a motherboard chipset, at least in Intel's case. The P35 supported both DDR2 and DDR3 memory types, and motherboard manufacturers made high-end products based on each of the two memory types, with some even supporting both.

Higher module prices posed a real, and higher latencies, posed a less real set of drawbacks to the initial adoption of DDR3. Those, coupled with the limited system bus bandwidth, to take advantage of DDR3. DDR3 only really took off with Nehalem, Intel's first processor with an integrated memory controller (IMC). An IMC, again in Intel's case, meant that the CPU came with memory I/O pins, and could only support one memory type - DDR3. Since then, DDR3 proliferated to the mainstream. Will the story repeat itself during the transition between DDR3 and the new DDR4 memory introduced alongside Intel's Core i7 "Haswell-E" HEDT platform? Not exactly.

First Intel Core M "Broadwell" Benchmarks Surface

Here are some of the first benchmarks of Intel's ambitious Core M processor, a performance-segment dual-core processor with a thermal envelope of just 4.5W, making it ideal for tablets, ultra-portables, and mainstream desktops. At IDF 2014, Intel showed off a 12.5-inch tablet running a Core M 5Y70 chip. An MCM of the CPU and PCH dies, the CPU die features two "Broadwell" 64-bit x86 cores, a large new graphics processor with 24 execution units and 192 stream engines, 4 MB of shared L3 cache, a dual-channel LPDDR3 memory controller, and a PCI-Express 3.0 root complex. The PCH die wires out the platform's various connectivity options.

The 12.5-inch Core M tablet was put through three tests, Cinebench R11.5, SunSpider 1.0.2, and 3DMark Ice Storm Unlimited. With the multi-threaded CPU-intensive Cinebench R11.5, the Core M scores a respectable 17 FPS in the GL bench, with 2.48 pts CPU. That's about 60 percent the performance of a Core i7-870. Significantly higher than anything Atom, Pentium, or AMD E-Series. With SunSpider, the Core M put out a score of 142.8, under Internet Explorer 12 running under Windows 8.1. With 3DMark IceStorm Unlimited, the Core M sprung up a surprise - 50,985 points. That over double that of a Qualcomm Snapdragon 800, and faster than the IGPs AMD E-Series APUs ship with. Color us interested.

Source: HotHardware

OCZ Vector 180 SSD PCB Pictured

Here are some of the first pictures of OCZ Vector 180, the company's upcoming high-end consumer SSD in the 2.5-inch form-factor, with SATA 6 Gb/s interface. This drive is so durable and resistant to bad power, that OCZ is classifying it as both consumer-enthusiast and entry-enterprise (fit for servers). The drive features OCZ-Indilinx Barefoot 3 M00 series processor, with what appears to be LPDDR3 cache, and a power-outage mitigating logic. When it senses a power-outage or unstable power, the drive finishes all outstanding read/write operations under power from of a capacitor bank, and "parks" itself, to prevent data loss. It features Toshiba MLC NAND flash built on the 19 nm silicon fabrication process. The drive comes in capacities of up to 960 GB, and offers sequential transfer rates of up to 550 MB/s, and 4K random access throughput of up to 100,000 IOPS.

Samsung 840 EVO mSATA 1TB Now on Pre-order

Earlier available only through the OEM channel, Samsung 840 EVO mSATA 1 TB, the highest capacity mSATA SSD, is beginning to show up in retail channels, stateside. B&H Photo Video has the drive listed on pre-order for US $615. The drive is sought after in the production industry, particularly by users of digital video cameras that feature mSATA SSD slots, as it allows you to film lossless high-resolution video longer. It's also a potential favorite among Ultrabook users. The 840 EVO mSATA features Samsung's MEX controller, which embeds a triple-core ARM processor; and TLC NAND flash memory. It offers impressive sequential speeds of up to 540 MB/s reads, and up to 520 MB/s writes. The controller uses no over-provisioning, and relies on a 1 GB LPDDR3 DRAM as scratchpad. The other sizes the 840 EVO mSATA is available in, include 120 GB, 250 GB, and 500 GB.


Source: Laptoping

SK Hynix Develops Industry-Leading 6 Gb LPDDR3 Memory

SK Hynix Inc. announced that it has developed 6 Gb (Gigabit) LPDDR3 (Low Power DDR3) using its 20 nm class process technology. This product is a high-performance mobile memory solution that features low power consumption and high-density, which is ideal for next generation premium mobile devices.

Four 6 Gb LPDDR3 products can be stacked up and realize a high density of maximum 3 GB (Gigabytes, 24 Gb) solution in a single package. In consequence, this package reduces the operating power as well as the standby current by 30% and the height of the package becomes thin compared to the Company's 4 Gb-based one. In addition, it works at ultra low-voltage of 1.2V thus it satisfies low power consumption which mobile applications demand.

SK Hynix Develops the World's First High Density 8 Gb LPDDR3

SK Hynix Inc. announced that it has developed the world's first 8 Gb(Gigabit) LPDDR3 (Low Power DDR3) using its advanced 20nm class process technology. This product is a top-performance mobile memory solution which features high density, ultrahigh speed and low power consumption.

The new products can be stacked up and realize a high density of maximum 4 GB(Gigabytes, 32 Gb) solution in a single package. In addition, the height of this package becomes dramatically thinner than the existing 4 Gb-based one. In terms of its high density and competitive package height, it is suitable for the newest trend of the mobile applications.

Samsung Now Producing 4 Gb LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry's first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node. The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

"By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "Our 20nm-class four gigabit mobile DRAM provides another example of our ability to deliver well-differentiated, high-performance, high-density memory to customers in a timely manner."

Rambus Introduces R+ LPDDR3 Memory Architecture Solution

Rambus Inc., the innovative technology solutions company that brings invention to market, today announced its first LPDDR3 offering targeted at the mobile industry. In the Rambus R+ solution set, the R+ LPDDR3 memory architecture is fully compatible with industry standards while providing improved power and performance. This allows customers to differentiate their products in a cost-effective manner with improved time-to-market. Further helping improve design and development cycles, the R+ LPDDR3 is also available with Rambus' collaborative design and integration services.

The R+ LPDDR3 architecture includes both a controller and a DRAM interface and can reduce active memory system power by up to 25% and supports data rates of up to 3200 megabits per second (Mbps), which is double the performance of existing LPDDR3 technologies. These improvements to power efficiency and performance enable longer battery life and enhanced mobile device functionality for streaming HD video, gaming and data-intensive apps.

Leaked Slides Reveal Details on Intel Atom 'Bay Trail-T' Platform

As confirmed by some freshly-leaked slides, 2014 will see Intel bring some new guns to the fight with ARM, including Bay Trail-T, the successor of Clover Trail and the first Atom platform to take advantage of the 22 nm manufacturing process.

The star of Bay Trail-T is the Valleyview SoC which will feature four (out-of-order) Silvermont cores clocked at up to 2.1 GHz (delivering up to 60% higher performance than the Clover Trail chip), a two-channel LPDDR3 memory controller, an upgraded video decoder, support for resolutions up to 2560 x 1600 pixels, and a new GPU boasting DirectX 11 capabilities and offering up to a 3x performance boost over Clover Trail.

Devices based on Bay Trail-T are expected to have a standby battery life of 20 days and would last for 11 hours of continuous video playback, before needing to be charged.

Source: Mobile Geeks

Samsung Announces Production of Industry's First 30 nm-class 2GB LPDDR3 Mobile Memory

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, has begun mass producing the industry’s first two gigabyte (GB), low power double-data-rate 3 (LPDDR3) memory, using 30 nanometer (nm) class* technology, for next-generation mobile devices.

Samsung started mass production of the industry’s most advanced mobile DRAM (dynamic random access memory) chip, only 10 months after it began producing the industry’s first 30nm-class based 2GB LPDDR2 memory in October, 2011. The new LPDDR3, which marks the first time a 2GB LPDDR3 density is available in one space-saving package, utilizes four LPDDR3 chips stacked together. LPDDR3 is needed for fast processors, high resolution displays and 3D graphics in tablets and smartphones.

SK Hynix Introduces DDR3L-Reduced Standby for Mobile Solutions

SK Hynix announced that it has introduced DDR3L-RS (Reduced Standby) DRAM for mobile solutions using its 20nm class technology. This product significantly reduces the standby power consumption.

By using cutting-edge 20nm class technology and efficiently managing standby current, this DDR3L-RS product reduces 70% of standby power compared to existing DDR3L DRAM while it maintains DDR3L performance. DDR3L DRAM which has recently gone mainstream works at 1.35V, while DDR3 DRAM does at 1.5V.

JEDEC Announces Publication of LPDDR3 Standard for Low Power Memory Devices

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-3 LPDDR3 Low Power Memory Device Standard, designed to satisfy the performance and memory density demands of the latest generation of mobile devices such as smartphones, tablets, ultra-thin notebooks and similar connected devices on the newest, high-speed 4G networks.

LPDDR3 offers a higher data rate, improved bandwidth and power efficiency, and higher memory densities over its groundbreaking predecessor, LPDDR2. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, the LPDDR3 Low Power Memory Device Standard is available for free download from the JEDEC website: http://www.jedec.org/sites/default/files/docs/JESD209-3.pdf.

DRAMeXchange: Six Upcoming Trends in the DRAM and NAND Flash Industries

According to DRAMeXchange, a research division of TrendForce, the following report presents a forecast of six major DRAM and NAND Flash industry trends in 2012-2015.

Trend-1: Mainstream PC DRAM Specification DDR3 to Dominate Market Until 2014

DDR3 has been the mainstream PC DRAM specification since 2011, and DRAMeXchange expects it will remain so until 2014. Although JEDEC will officially announce standards for DDR4 in 2012, DRAMeXchange is conservative as to whether the new specification will follow the historical pattern set by DDR and DDR2 and hit the market in 2014-2015, as the marginal benefit to PC performance provided by DDR4 will be limited. However, Intel will still hold decisive influence over the matter.

JEDEC Publishes Breakthrough Standard for Wide-IO Mobile DRAM

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the availability of a new standard for Wide I/O mobile DRAM: JESD229 Wide I/O Single Data Rate (SDR). Widely anticipated by the industry, Wide I/O mobile DRAM is a breakthrough technology that will meet industry demands for increased levels of integration as well as improved bandwidth, latency, power, weight and form factor; providing the ultimate in performance, energy efficiency and small size for smartphones, tablets, handheld gaming consoles and other mobile devices. JESD229 may be downloaded free of charge from the JEDEC website here.

Wide I/O mobile DRAM enables chip-level three dimensional (3D) stacking with Through Silicon Via (TSV) interconnects and memory chips directly stacked upon a System on a Chip (SoC). The standard defines features, functionalities, AC and DC characteristics, and ball/signal assignments. It is particularly well-suited for applications requiring extreme power efficiency and increased memory bandwidth (up to 17GBps). Examples include 3D Gaming, HD Video (1080p H264 video, pico projectors), and running multiple applications simultaneously. Wide I/O offers twice the bandwidth of the previous generation standard, LPDDR2, at the same rate of power consumption.

Elpida Starts Shipments of 4 Gbit Wide-IO LPDDR3 Memory Chips

Elpida Memory, Inc., the world's third largest Dynamic Random Access Memory manufacturer, today announced that it has begun sample shipments of 4-gigabit Wide IO Mobile RAM and 4-gigabit DDR3 Mobile RAM (LPDDR3).

Wide IO Mobile RAM is a next-generation mobile memory chip that provides solutions to opposing needs for faster speed and lower power consumption. The rising performance of smartphones and tablet devices in recent years has led to demand for faster DRAMs (DRAMs with greater data transfer rates), but in turn this has generated concerns about increases in system power consumption.

The solution is that Wide IO Mobile RAM expands the I/O width by using x512-bit, a data width that is more than 10 times larger than the width for existing DRAMs, which enables a data transfer rate of 12.8 gigabytes per second (GB/s) per chip while operating at a low speed of 200MHz. The reduced DRAM speed results in approximately 50% less power consumption compared with DDR2 Mobile RAM (LPDDR2), currently the leading DRAM choice for mobile devices, configured at the same transfer rate.
Return to Keyword Browsing