News Posts matching "MRAM"

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Everspin ST-MRAM Incorporated Into Buffalo Memory SSDs

Everspin Technologies today announced that Buffalo Memory is introducing a new industrial SATA III SSD that incorporates Everspin's Spin-Torque MRAM (ST-MRAM) as cache memory. In addition to breaking new ground as a SATA III SSD, this product is also the first to specify STMRAM for its cache. Buffalo Memory will showcase the new product at its booth (B-05) at the Embedded Technology 2013 conference held in Yokohama, Japan on November 20-22.

Buffalo's SS6 series SATA III SSD with Everspin ST-MRAM cache improves tolerance for sudden power loss and reduces power consumption. SATA III runs up to 6.0 Gigabits per second, twice the rate of SATA II, which improves quality of service in high data rate applications.

New Toshiba STT-MRAM Memory Element Promises World's Best Power Consumption

Toshiba Corporation today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory.

Like all digital products, mobile devices, including smartphones and tablet PCs, rely on high-speed memory to supply the main processor with essential instructions and frequently requested data. Until now SRAM has provided the cache-memory solution. However, improving the performance of SRAM to match advances in mobile products results in increasing current leakage, both during operation and in standby mode, degrading power performance.

Everspin Debuts First Spin-Torque MRAM for High Performance Storage Systems

Everspin Technologies leads the industry in commercializing the first Spin-Torque Magnetoresistive RAM (ST-MRAM), a new type of high performance and ultra-low latency memory that is expected to transform storage architecture and help drive the continuous evolution of Moore's Law.

ST-MRAM is a performance-optimized Storage Class Memory (SCM) that bridges the role of today's conventional memory with the demands of tomorrow's storage systems by providing non-volatility, high endurance and ultra-low latency. The 64 Mb device is the first product in Everspin's ST-MRAM roadmap that is planned to scale to gigabit density memories with faster speeds. Select customers are now evaluating samples of Everspin's EMD3D064M 64 Mb DDR3 ST-MRAM.

Buffalo Readies New Line of SSDs with MRAM Caches

Buffalo launched a new line of SSDs that incorporate MRAM (magnetic random access memory) caches. The caches provide increase tolerance to power loss, and momentarily hold data that's being transacted between the drive and the host, which buys the controller some time to prevent data loss, when the power goes down. Pictures suggest that Buffalo could have SSDs in both SATA and IDE flavors. So far, MRAM cache is the only distinctive feature of a new line of SSDs Buffalo is working on, which it will unveil a little later, at the Embedded Systems Expo (ESEC) 2012.

Source: Hermitage Akihabara

Hynix and Toshiba Sign Joint Development for MRAM

Hynix Semiconductor Inc. and Toshiba Corporation today announced that they have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next generation memory device. Once technology development is successfully completed, the companies intend to cooperate in manufacturing MRAM products in a production joint venture. Hynix and Toshiba have also extended their patent cross licensing and product supply agreements.

Toshiba recognizes MRAM as an important next-generation memory technology with the potential to sustain future growth in its semiconductor business. Hynix has a cutting-edge memory technology, most notably in manufacturing process optimization and cost competitiveness. The collaboration announced today, between two of the world’s leading semiconductor manufacturers in a promising new technology, is expected to make a significant contribution to the continued progress of the world semiconductor industry.

Spin Flip Trick Points to Fastest RAM Yet

Here's a good story catch found by one of our readers and sent to me. Because of the nature of this post I won't try to rewrite it, otherwise I might make a mistake explaining the technical terms used. The text below is borrowed from the original source of the news - NewScientistTech.

Do you wish your computer was faster? Engineers and physicists from Germany have demonstrated the quickest prototype yet of an advanced form of RAM tipped by hardware manufacturers to be the future of computing. The device is so fast it brushes against a fundamental speed-limit for the process. Magnetoresistive random access memory (MRAM) is a faster and more energy efficient version of the RAM used in computers today, and hardware companies think it will in a few years dominate the market.

NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHz

NEC Corporation today announced that it has succeeded in developing a new SRAM (Static Random Access Memory) - compatible MRAM that can operate at 250MHz, the world's fastest MRAM (Magnetoresistive Random Access Memory) operation speed. MRAM is expected to be the dominant next-generation memory technology as it realizes ultra fast operation speeds, nonvolatility - ability to retain data with the power off, and unlimited write endurance. Verification at the SRAM speed level proves that the newly-developed MRAM could be embedded in system LSIs as SRAM substitutes in the future.

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