News Posts matching "NAND flash"

Return to Keyword Browsing

Samsung Starts Mass Production of Industry's First 3-bit 3D V-NAND Flash Memory

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs).

"With the addition of a whole new line of high density SSDs that is both performance- and value-driven, we believe the 3-bit V-NAND will accelerate the transition of data storage devices from hard disk drives to SSDs," said Jaesoo Han, Senior Vice President, Memory Sales & Marketing, Samsung Electronics. "The wider variety of SSDs will increase our product competitiveness as we further expand our rapidly growing SSD business."

The 3-bit V-NAND is Samsung's latest second generation V-NAND device, which utilizes 32 vertically stacked cell layers per NAND memory chip. Each chip provides 128 gigabits (Gb) of memory storage.

ADATA Launches Enterprise Grade Server SSD - SR1010

ADATA Technology, a leading global manufacturer of high-performance DRAM memory modules and NAND Flash application products, today launches its SR1010 enterprise grade server SSD featuring comprehensive data encryption, reliability, superior performance and high compatibility with many operating systems. Available in 100GB, 240GB and 480GB sizes, ADATA's SR1010 SSD is a perfect upgrade solution for industrial servers, data centers and embedded devices.

For enterprise servers and data centers, unexpected system failure leads to incalculable damage and loss of vital information. To help safeguard against such scenarios, commercial servers require a powerful yet effective protection mechanism: PLP (Power-Loss Protection). Thanks to PLP technology, ADATA's SR1010 SSD helps to prevent catastrophic data crashes caused by system failures, such as utility power grid failures or data center backup generator failures. ADATA's SR1010 SSD also supports S.M.A.R.T., which monitors your SSDs' status, thus ensuring your data's security and integrity, as well as improving the SSD's efficiency.

Toshiba Offers World's Smallest-Class e-MMC Embedded NAND Flash Memory Products

Toshiba America Electronic Components, Inc., (TAEC), a committed leader that collaborates with technology companies to create breakthrough designs, today announced the launch of a class of e-MMCTM embedded NAND flash memory products that are among the world's smallest.The new products integrate NAND chips fabricated with Toshiba's cutting-edge 15 nm process technology and a controller to manage basic control functions for NAND applications into a single package.

Fully compliant with the latest JEDEC e-MMC standard, the new chips are designed for application in a wide range of digital consumer products, including smartphones, tablet PCs and wearable devices. Sample shipment of the 16 gigabyte (GB) products begins today, with 8GB, 32GB, 64GB, and 128GB products to follow. By utilizing the 15nm process technology, the new product's package size is approximately 26 percent smaller than comparable Toshiba products and offers faster read/write performance due to improvements in basic chip performance and controller optimization. The read speed is approximately eight percent faster (max.), while the write speed is approximately 20 percent faster (max.).

Samsung 850 EVO SSD Coming Soon

Samsung and the world's second solid-state drive based on 3D vertical-NAND flash technology, the 850 EVO, was spotted on marketing material, ahead of its launch. Closely trailing the company's flagship 2.5-inch SATA 6 Gb/s drive, the 850 Pro, the 850 EVO will have lower price per GB. The drive will be based on Samsung's 3-bit (TLC) 3D V-NAND chips, and Samsung's updated triple-core processor. Given how Samsung is offering a stunning 10-year warranty with the 850 Pro, this drive could come with a similar warranty. The 850 Pro, for example, is rated with a TBW ceiling of 150 TB, double that of its predecessor.

Source: Expreview

Toshiba and SanDisk Celebrate the Opening of the Second Phase of Fab 5

Toshiba Corporation and SanDisk Corporation today celebrated the opening of the second phase of the No. 5 semiconductor fabrication facility (Fab 5) and the start of construction of the new No. 2 fabrication facility (Fab 2) at Yokkaichi Operations, Toshiba's NAND Flash memory plant in Mie prefecture, Japan.

Toshiba started construction of the second phase of Fab 5 in August 2013, and Toshiba and SanDisk have overseen installation of production equipment in the expanded facility since July this year. Production in phase 2 began at the start of this month, with 15 nm NAND flash memory process technology, the world's smallest and most advanced node. Toshiba and SanDisk announced deployment of this jointly developed 15 nm NAND flash process in April this year, with initial production in part of Fab 5 phase 1, and now target conversion of the remaining capacity in phase 1 to the new process technology.

AMD Announces the Radeon R7 Line of Solid State Drives

AMD today announced its Radeon R7 line of mainstream solid-state drives. Built by OCZ, the drives feature Toshiba-made MLC NAND flash, and OCZ's Indilinx Barefoot 3 M00 processors. Built in the 7 mm-thick 2.5-inch form-factor, the drives feature SATA 6 Gb/s interface, and are available in three capacities, 120 GB, 240 GB, and 480 GB.

All three offer sequential read speeds of up to 550 MB/s; while the 120 GB variant offers up to 470 MB/s of sequential writes; the 240 GB and 480 GB ones offer up to 530 MB/s. Their 4K random read performance numbers are up to 85,000 IOPS, up to 95,000 IOPS, and up to 100,000 IOPS, respectively; while the 4K sequential write performance for all three are rated at up to 90,000 IOPS. The Radeon R7 is essentially an OCZ Vector 150 with lighter processor clocks, and could be priced accordingly.

Apotop Launches S3C SSD

Apotop, maker of creative electronics and peripherals, has released the S3C SATA III SSD with SM2246 controller and Synchronous NAND Flash coming in 64GB, 128GB, 256GB, and 512GB sizes.

Upgrade and speed up your computer with the Apotop S3C SSD which uses cutting-edge solid state architecture with a SM2246 controller with Synchronous NAND flash, capable of reaching sequential read speeds of up to 500 MB/s. The S3C also allows for exceptionally quick file transfers during editing and backup because of the supported 300 MB/s sequential write speed.

Toshiba to Showcase Latest NAND and Storage Products at Flash Memory Summit

Toshiba Corporation (TOKYO: 6502) today announced that it will showcase its latest NAND flash and storage products at Flash Memory Summit, the world's largest flash memory conference, which will be held from August 5 to 7 at the Santa Clara Convention Center in Santa Clara, California, USA. The exhibition part of Flash Memory Summit will be held in the latter two days, August 6 and 7, and Toshiba will be exhibiting at booth #504.

AMD Readies Radeon R7 Branded Client SSDs

AMD's Radeon brand is turning out to be its only hope in capturing high-end gaming PC sales. The brand now covers AMD's high-performance GPUs, system memory modules, and now, client SSDs. The company is giving final touches to three client SSD models in the 2.5-inch SATA form-factor, bearing the Radeon R7 brand, featuring capacities of 120 GB, 240 GB, and 480 GB.

All three feature SATA 6 Gb/s interface, and offer sequential read speeds as high as 550 MB/s, sequential writes of up to 470 MB/s on the 120 GB variant; and up to 530 MB/s on both the 240 GB and 480 GB ones. The three offer 4K random access throughput of up to 85,000 IOPS, 95,000 IOPS, and 100,000 IOPS, respectively; with 4K QD32 steady-state throughput of 12,000 IOPS, 20,000 IOPS, and 23,000 IOPS, respectively. The three are based on OCZ's Indilinx Barefoot 3 processor, driving Toshiba-made 19 nm MLC NAND flash chips. The three will be formally launched on the 13th of August, 2014.


Source: WCCFTech

SSD Price War on the Cards

The consumer SSD market could witness a price-war, with leading manufacturers spooling up production, according to industry sources. NAND flash chip supplier Micron Technology reportedly reduced supplies of its chips to other manufacturers, in a possible bid to increase production of consumer SSDs bearing its own channel brand, Crucial Memory. The company plans to double shipments of Crucial-branded SSDs quarter-over-quarter. Elsewhere, Kingston Digital ramped up SSD shipments to 600,000 units a month, to step up competition against SanDisk and Samsung.

SSD makers are likely to take advantage of the entry of M.2 standard in the consumer space, with the introduction of Intel's 9-series chipset. M.2 offers 10 Gb/s of interface bandwidth (physical layer PCI-Express 2.0 x2), and some non-standard implementations are wired to offer even 20 Gb/s (physical layer PCI-Express 2.0 x4). M.2 slots feature SATA 6 Gb/s wiring in some onboard implementations, which could pave the way for M.2 replacing 2.5-inch SATA as the highest selling SSD form-factor, in the near future.


Source: DigiTimes

Updated Intel Roadmap Reveals SSD 750 Series, M.2 Push by Company

Alongside an updated desktop CPU roadmap, Intel posted an updated consumer SSD roadmap at its 3D Revolution 2014 presentation in Rome. It reveals the company's next-generation consumer SSD series, codenamed "August Ridge," and branded SSD 750 series. Targeting both the "consumer" and "professional" (≠ enterprise) market segments, the SSD 750 series comes in three form-factors, 2.5-inch SATA 6 Gb/s, mSATA 6 Gb/s, and M.2 (likely PCIe 2.0 x2 link layer). The series will sell in most popular sub-terabyte capacities, and will be based on the company's 20 nm MLC NAND flash. We have no reason to believe Intel will discontinue using SandForce-made processors in its consumer SSDs. Intel's SSD 750 series "August Ridge" is slated for Q4-2014.

GeIL Shows off ZENITH Line of High-Performance SSDs

GeIL stepped into the modern SSD scene with its ZENITH line of SSDs. The series consists of two models, the performance-focused ZENITH S3, and the value-focused ZENITH A3. Both are built in the 7 mm-thick 2.5-inch form-factor, with SATA 6 Gb/s interface, and both come in capacities of 60 GB, 120 GB, 240 GB, and 480 GB. Both appear to be powered by Seagate-SandForce controllers, and MLC NAND flash memory. The ZENITH A3 offers sequential transfer rates of up to 540 MB/s reads, with up to 300 MB/s writes; while the ZENITH S3 offers up to 550 MB/s reads, with up to 500 MB/s writes.

Samsung Starts Mass Producing Industry's First 32-Layer 3D V-NAND Flash Memory

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first three-dimensional (3D) V-NAND flash memory using 32 vertically stacked cell layers, which is its second generation V-NAND offering. Samsung's 32-layer 3D V-NAND - also referred to as Vertical NAND - requires a higher level of design technology to stack the cell arrays than the previous 24-layer V-NAND, yet delivers much greater production efficiency because Samsung can use essentially the same equipment it used for production of the first generation V-NAND.

In addition, Samsung has just launched a line-up of premium SSDs based on its 2nd generation V-NAND flash memory with 128 gigabyte (GB), 256GB, 512GB and 1TB storage options. After introducing 3D V-NAND-based SSDs to data centers last year, Samsung is now extending its V-NAND SSD line-up to high-end PC applications, in expanding its market base. "We increased the availability of our 3D V-NAND by introducing an extensive V-NAND SSD line-up that covers the PC market in addition to data centers," said Young-Hyun Jun, executive vice president, memory sales and marketing, Samsung Electronics. "Look for us to provide a consistent, timely supply of high-performance, high-density V-NAND SSDs as well as core V-NAND chips for IT customers globally, contributing to fast market adoption of 3D NAND technology."

Marvell Announces New PCIe SSD Controller Supporting SATA Express

Marvell today announced the launch of its new 88SS1083 PCI Express (PCIe) solid state drive (SSD) controller -a two-lane PCIe Gen2 SSD controller. With performance transfer rates up to 1 GB/s, Marvell's 88SS1083 controller allows SSD manufacturers to offer PCIe SSD at price parity to SATA SSD. The Marvell 88SS1083 is the industry's first controller to be fully compliant with the SATA Express standard, which leverages the most popular PCIe interface and brings in low latency, dual-lane support and 1 GB/s data transfer rate.

The new 88SS1083 controller also supports Separate RefClock with Independent SSC (SRIS), a critical feature as it eliminates the need for an expensive shielded cable for minimizing noise and instead allows for a cost-effective SATA Express cable. SATA Express host can connect either high-performance SATA Express SSDs or traditional SATA devices at similar accessory costs.

"Improving performance while maintaining low power becomes more important than ever, especially for today's ultrathin notebooks and tablets," said Rajan Pai, Vice President, Sales and Field Applications Engineering at Marvell. "The new 88SS1083 allows SSD OEMs to offer higher performance, PCIe-based SSD solutions at similar prices to SATA and is quickly becoming the controller of choice for global OEMs. Marvell is proudly pioneering a new generation of high-performance and low-power silicon solutions that is driving our industry forward."

Toshiba to Replace Fab 2 at Yokkaichi Japan for Transition to 3D NAND Technology

Toshiba Corporation today announced that it will demolish the No. 2 semiconductor fabrication facility (Fab 2) at Yokkaichi Operations, the company's NAND Flash memory plant in Mie prefecture, Japan, and replace it with a new fab on the same site. Toshiba also entered into a non-binding memorandum of understanding with SanDisk Corporation to invest jointly in the new facility. The primary purpose of the new wafer fab is to secure space for converting existing Toshiba and SanDisk 2D NAND capacity to 3D NAND beginning in 2016.

Demolition work on the current Fab 2 will start in May with construction beginning in September 2014, with a target completion date of Summer 2015. The clean room within the new fab will be built in phases to align the clean room investment with the timing of conversion of 2D NAND capacity to 3D NAND. Construction of the initial cleanroom will be complete in time for 2016 output. Decisions on capacity conversion ramp and equipment investment, the start of production, and production levels in the new fab will reflect market trends.

Samsung Announces Operation of Memory Facility in Xi'an, China

Samsung Electronics, Co., Ltd., a global leader in memory semiconductor technology, today announced that its memory fabrication line in Xi'an China has begun full-scale manufacturing operations. The new facility will manufacture Samsung's advanced NAND flash memory chips: 3D V-NAND. Samsung Electronics Vice Chairman and CEO Dr. Oh-Hyun Kwon hosted a plant inauguration event, which welcomed a large number of attendees including government dignitaries such as Zhao Zhengyong, Secretary of Communist Party of China Committee of Shaanxi province, Lou Qinjian, Governor of Shaanxi province, and Young-se Kwon, Ambassador of the Republic of Korea to the People's Republic of China. Other honored attendees included Samsung suppliers and customers.

Construction of the new manufacturing facility took only 20 months since Samsung broke ground here in September, 2012. The total area of the facility is approximately 230,000 square meters, situated on 1.14 million square meters of land. In remarks delivered during the ceremony, Dr. Kwon said, "The city of Xi'an was the starting point of the Silk Road, which had performed a key role in bridging cultures from the East and the West. We expect that our new facility in Xi'an - the fruit of close cooperation with China, will mark the crowning of a 21st century Silk Road."

Samsung Begins Mass Production of Industry's First Enterprise 3-bit NAND SSD

Samsung Electronics, Co., Ltd., the world leader in advanced memory technology, said today that it has begun mass producing the industry's first high-performance, three-bit-NAND-based SSD for servers and data centers. The new SSD will allow data centers to better manage workloads related to social networking, web browsing and email, and enhance operation efficiency. Installations of the 3-bit MLC (multi-level-cell) NAND SSDs, initially in large-scale data centers, are expected to begin later this quarter.

"Following the last year's introduction of 3-bit NAND-based SSDs for PC markets, our new 3-bit SSD for data centers will help considerably in expanding the market base for SSDs," said Young-Hyun Jun, executive vice president, memory sales and marketing, Samsung Electronics. "We expect SSD market growth will gain momentum as this new SSD delivers significant improvements in data center investment efficiency, leading to full-fledged commercialization of SSDs in IT systems later this year."

SanDisk Announces 15 Nanometer Technology

SanDisk Corporation, a global leader in flash storage solutions, today announced the availability of its 1Z-nanometer (nm) technology, the most advanced NAND flash process node in the world. The 15 nm technology will ramp on both two bits-per-cell (X2) and three bits-per-cell (X3) NAND flash memory architectures with production ramp to begin in the second half of 2014.

"We are thrilled to continue our technology leadership with the industry's most advanced flash memory process node, enabling us to deliver the world's smallest and most cost effective 128 gigabit chips," said Dr. Siva Sivaram, senior vice president, memory technology, SanDisk. "We are delighted that these new chips will allow us to further differentiate and expand our portfolio of NAND flash solutions."

Toshiba Starts Mass Production of World's First 15 nm NAND Flash Memory

Toshiba Corporation today announced that it has developed the world's first 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the new technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba's NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba's previous flagship process. The second stage of Fab 5 is currently under construction, and the new technology will also be deployed there.

Toshiba has achieved the world's smallest class chip size with the 15nm process plus improved peripheral circuitry technology. The new chips achieve the same write speed as chips formed with second generation 19 nm process technology, but boost the data transfer rate to 533 megabits a second, 1.3 times faster, by employing a high speed interface.

Crucial Announces the M550 Series SSDs

Crucial announced its M550 series of performance SSDs, succeeding its existing M500 series. Built in 7 mm-thick 2.5-inch SATA, mSATA, and M.2 form-factors, the M550 series offers higher sequential transfer rates, and comes in higher capacities near existing price-points, over its predecessor. It also introduces a handful new features, such as NWA (native write acceleration), RAIN (redundant array of independent NAND), adaptive thermal protection (ATP), and hardware encryption. The drives appear to be based on a Marvell-made controller platform, with Micron-made MLC NAND flash. The mSATA 6 Gb/s and M.2 models come in capacities of 128 GB, 256 GB, and 512 GB; while the 2.5-inch SATA 6 Gb/s models include 1 TB capacity. The drives offer sequential reads as high as 550 MB/s, with up to 500 MB/s of sequential writes. They're backed by 3-year warranties, and should eventually replace the M500 series from their existing price points.

OCZ Storage Solutions Launches New Z-Drive 4500 PCIe SSD with WXL Software

OCZ Storage Solutions - a Toshiba Group Company and leading provider of high-performance solid-state drives (SSDs) for computing devices and systems, today announced the introduction of the enterprise-class Z-Drive 4500 PCI Express (PCIe) SSD Series. The new Z-Drive 4500 Series delivers even higher performance in comparison to OCZ's Z-Drive R4 Series, leverages 19 nanometer (nm) MLC NAND flash, and features a more robust architectural design covering 800GB, 1.6TB and 3.2TB usable capacities.

Each model within the Z-Drive 4500 Series is integrated with OCZ's new Windows Accelerator (WXL) Software -- a flash management and caching solution for Microsoft Windows Server applications also announced by the Company today. WXL Software enables IT managers to deliver low-latency flash deployable as a local flash volume, a flash cache for HDD volumes or as a combination of both.

Intel "Fultondale" and "Pleasantdale" SSDs Not Very Pleasant with Thermals

As SSDs play catch-up with HDDs on the capacity front, the focus will shift to NAND flash memory designers increasing transistor densities using newer silicon fabrication technologies. In the absence of that, SSD designers will have to cram more number of NAND flash chips to achieve desired high capacities. That throws up two key issues with having too many chips in one place - heat and power. Intel is gearing up to deal with heat on its upcoming "Fultondale" and "Pleasantdale" SSDs for data-centers. Leaked company documents seen by VR-Zone reveal renders of what Intel expects the drives to look like.

Built in the 3.5-inch form-factor the drives are built almost entirely of chunky metal, with a retractable top lid, and its body. The body doubles up as heatsink, it features metal ridges which dissipate heat drawn from the NAND flash chips of the SSD to the air. Internally, the drive will feature at least two PCBs, one which holds the controller, cache RAM (if any), and some NAND flash chips; while the other holds NAND flash chips entirely. How hot can things get? According to the source, the drive could draw as much as 25W of power. That could amount to enough heat to warrant a passive heatsink. Intel is expected to unveil the two drives at IDF Beijing, slated for Q4-2014.

Source: VR-Zone

Toshiba Announces Slimmer 7 mm SSHD

Toshiba, a committed technology leader, announces the slim, 7mm MQ01ABF solid state hybrid drive (SSHD) series. Equipped with Toshiba's NAND flash and available in 500GB1 and 320GB capacities, the MQ01ABFH series is the first Toshiba SSHD drive family in 7 mm. The series continues Toshiba's legacy of providing world-class storage products, and offers customers a complete lineup of 2.5-inch solid state hybrid drives with the previously announced 1TB2 and 750GB MQ01ABDH series 9.5mm SSHDs for ultrathin and thin and light notebook PCs, multimedia and gaming applications, and traditional laptop PCs.

Drawing upon its knowledge and experience in NAND flash, Toshiba optimized the NAND flash performance into a tiered-storage approach that uses the speed of the DRAM and NAND components with the high-capacity of rotating media. The SSHD delivers SSD-like performance without dependence on external drivers or assistance from the host system. The PC Mark Vantage Score, the established industry method for measuring SSHD read/write performance and responsiveness, for the MQ01ABFH series is approximately 20,000, surpassing the 16,000 industry standard result.

Toshiba Announces PX02SS SSD for Write-Intensive Workloads

The Storage Products Business Unit of Toshiba America Electronic Components, Inc., a committed technology leader, announces a new addition to its family of enterprise solid state drives (eSSD), the PX02SS. In capacities of up to 800GB1, the new 2.5-inch form factor SAS interface eSSD is designed for various write-intensive enterprise applications and is ideally suited for large workloads, such as data processing and online transactions.

The PX02SS features a 12 Gb/s SAS interface, and select models offer industry standard self-encrypting technology. With high transaction workloads in mind, the newest eSSD supports up to 30 full drive writes per day for all available capacity points and has a layered error correction code (ECC) approach for improved reliability. The PX02SS underscores the breadth of Toshiba's storage products, both SSDs and hard disk drives (HDDs) for mobile and enterprise markets, giving customers a "one stop shop" capability for their storage requirements.

KINGMAX Launches SME Xvalue for HDD-to-SSD Upgrade

For today's PC users, high-performance, high-quality SSDs are increasingly the preferred choice. KINGMAX, a premium memory and Flash module manufacturer that serves the world market, is proud to introduce SME 32/35, the latest additions to its SME Xvalue SSD Series. The SME SATA III2.5"SSDs make a timely debut as many must be considering a replacement or upgrade of their HDDs. For most end users, performance is hardly the ultimate determinant for choosing between the two storage devices, empirical studies show. But they know SSDs are faster than HDDs and that the former does speed up their system both during booting and in operation.

An exceptionally attractive cost-performance ratio justifies SME as a bargain. This is especially the case with those who would rather go for a partial refresh as an across-the-board upgrade of their existing old devices seems hardly warranted. Pitted against comparable HDD counterparts, it stands out with an ultra-low cost per IOPS and extraordinary operational efficiency on the same measure of power consumption.
Return to Keyword Browsing