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Spansion Introduces Industry's Highest-Performance 1.8V Serial NOR Flash Memory

Spansion Inc., a global leader in embedded systems solutions, today expanded the company's high-speed Serial NOR portfolio with a high-performance family of 1.8V flash devices, the Spansion FS-S Serial Flash family.

With read speeds up to 133 MHz in Single/Dual/Quad I/O mode and 80 MHz in double data rate (DDR) mode, the FS-S family delivers up to 80 MBytes/second (MB/s) of read throughput and is 50 percent faster than competing solutions. In addition, industry leading programming performance of up to 1.08 MB/s - twice the programming speed of competing solutions - accelerates manufacturing throughput and lowers programming costs dramatically. Spansion's FS-S family also offers the fastest erase time in the industry of up to 0.5 MB/s.

Micron's High-Density 45nm Serial NOR Flash Doubles Programming Speed

Micron Technology, Inc. (Nasdaq:MU), today announced the availability of 45nm Serial NOR Flash memory samples in 512Mb, 1Gb, and 2Gb densities with a standard SPI interface. These new MT25Q SPI NOR devices offer a cost-effective solution with high performance, enhanced security and drop-in compatibility with legacy NOR devices, enabling high-density SPI NOR adoption in consumer, automotive, industrial and networking applications.

Micron's MT25Q devices satisfy embedded application requirements with best-in-class 2 MB/s programming speed. In addition, MT25Q devices offer improved erase performance and 66 MB/s read performance, enabling fast updates and boot performance for embedded systems. The MT25Q family also offers the industry's first serial NOR 2Gb device in a 6mm x 8mm BGA package, which is the smallest package available in the market today.

Micron Unveils Serial NOR Flash Interface for Future Ultrathin Devices

Micron Technology, Inc., today announced the availability of a replay-protected monotonic counter (RPMC) feature for their SPI NOR Flash memory devices, which are validated for future Intel Ultrabook platforms. The cost-effective 64Mb density is the sweet-spot solution currently available for immediate platform-enablement activities.

The RPMC feature in Micron's SPI NOR device is the first in a family of cryptographic primitives that will significantly enhance preboot security in cost-sensitive embedded, mobile, and personal computing architectures. The RPMC-enabled device facilitates critical nonvolatile data storage, while making systems resistant to rollback and replay attacks. It enables original equipment manufacturers (OEMs) to further strengthen code/data storage in the boot memory and deliver more secure systems to customers.

Micron and Intel Collaborate on Security Feature for Ultrathin Devices

Micron Technology, Inc., (Nasdaq:MU) today announced the availability of a replay-protected monotonic counter (RPMC) feature for their SPI NOR Flash memory devices, which are validated for future Intel Ultrabook platforms. The cost-effective 64Mb density is the sweet-spot solution currently available for immediate platform-enablement activities.

The RPMC feature in Micron's SPI NOR device is the first in a family of cryptographic primitives that will significantly enhance preboot security in cost-sensitive embedded, mobile, and personal computing architectures. The RPMC-enabled device facilitates critical nonvolatile data storage, while making systems resistant to rollback and replay attacks. It enables original equipment manufacturers (OEMs) to further strengthen code/data storage in the boot memory and deliver more secure systems to customers.
Micron's 64Mb RPMC-enabled SPI NOR device supports nonvolatile storage and authentication needs that are critical to the chipset security implementation for future Intel Ultrabook platforms and is compliant with Intel's Serial Flash Hardening Product External Architecture Specification. The device, which is available in SO8W and W-DFN 0.8mm packages, also includes improved erase performance to increase throughput and lower the initial cost of manufacturing programming.

Toshiba Develops High Speed Nano Flash 100 Standard

Toshiba Corporation today announced that it has developed NANO FLASH-100 much faster access for embedded microcontrollers, based on Toshiba's original NANO FLASH. The rich functionality and high speed capabilities of embedded microcontrollers require much flash memory with much faster access rates. Toshiba has recognized and responded to this by developing NANO FLASH which merges two features: high speed programming, based on NAND flash memory cell device technology; and NOR flash memory circuit technology.

Toshiba has subsequently brought this high level performance to its original microcontrollers and to ARM core-based microcontrollers. Now, as more users use ARM core-based microcontrollers, there is an emerging need for greater speed and large memory capacities. NANO FLASH-100 is highly suited to this market.

Micron Technology, Inc., Reports Results for the First Quarter of Fiscal 2013

Micron Technology, Inc., (NASDAQ: MU) today announced results of operations for its first quarter of fiscal 2013, which ended November 29, 2012. For the first quarter, the company had a net loss attributable to Micron shareholders of $275 million, or $0.27 per diluted share, on net sales of $1.8 billion. The results for the first quarter of fiscal 2013 compare to a net loss of $243 million, or $0.24 per diluted share, on net sales of $2.0 billion for the fourth quarter of fiscal 2012, and a net loss of $187 million, or $0.19 per diluted share, on net sales of $2.1 billion for the first quarter of fiscal 2012.

Revenues from sales of NAND Flash products were 4 percent lower in the first quarter of fiscal 2013 compared to the fourth quarter of fiscal 2012, due to a 9 percent decrease in sales volume, partially offset by a 5 percent increase in average selling prices. Trade NAND Flash sales volume in the first quarter of fiscal 2013 decreased compared to the fourth quarter of fiscal 2012 primarily as a result of lower production of NAND Flash products. Revenues from sales of DRAM products in the first quarter of fiscal 2013 were 9 percent lower compared to the fourth quarter of fiscal 2012 primarily due to an 11 percent decrease in average selling prices. Sales of NOR Flash products were relatively unchanged for the first quarter of fiscal 2013 compared to the fourth quarter of fiscal 2012.

Spansion Announces Industry's First 8 Gb NOR Flash Memory at 45 nm

Spansion Inc., the leading innovator in Flash memory solutions, today announced the industry's first single-die 8 (Gigabit) Gb NOR Flash memory product at 45 nanometer (nm). The 8 Gb Spansion GL-T delivers high-quality, fast random access read performance to enable a better user experience with interactive graphics, animation and video in games and industrial applications.

Based on Spansion's proprietary, highly reliable MirrorBit technology, the 8 Gb Spansion GL-T will begin sampling next month. The Spansion GL-T family at 45 nm is the newest addition to the Spansion GL parallel NOR product line and complements the 65 nm Spansion GL-S product family, which ranges from 128 Megabit (Mb) through 4 Gb densities. With the fastest read and program speeds for NOR Flash memory in the industry, Spansion continues to expand its customer engagements and design wins for the Spansion GL product family, which is targeted at enriching the user experience in consumer, automotive, gaming, telecom and industrial applications.

Total Flash Memory Market Declines Slightly in 2012

The NAND and NOR flash memory market landscape is shifting rapidly, with increasingly sophisticated mobile handsets playing a leading role in driving industry trends and determining which suppliers will be successful, according to an IHS iSuppli Mobile & Embedded Market Tracker Report from information and analytics provider IHS.

Revenue for the flash memory market by year-end is projected to decline to $24.3 billion, down 4.7 percent from 25.5 percent from $25.5 billion in 2011. The NAND segment this year will account for $20.8 billion and the NOR sector will make up the remainder at $3.5 billion.
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