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Crossbar Unveils Resistive RAM Non-Volatile Memory Technology

Emerging from stealth-mode today, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar Resistive RAM (RRAM) technology. This new generation of non-volatile memory will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, enabling massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. Crossbar today also announced it has developed a working Crossbar memory array at a commercial fab, a major milestone in the development of new memory technology, signaling its readiness to begin the first phase of productization.

Due to its simple three-layer structure, Crossbar technology can be stacked in 3D, delivering multiple terabytes of storage on a single chip. Its simplicity, stackability and CMOS compatibility enable logic and memory to be easily integrated onto a single chip at the latest technology node, a capability not possible with other traditional or alternative non-volatile memory technologies.
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