News for "28nm"
| Tuesday, October 6th 2009 |
ARM and GLOBALFOUNDRIES today announces a long-term strategic relationship to provide their mutual customers with an innovative SoC enablement program. To support the long-term relationship, GLOBALFOUNDRIES and ARM have signed a broad agreement on processor implementation and circuit optimization to provide mutual customers with a robust enablement program geared towards next-generation applications.
The SoC enablement program, built around a full suite of ARM Physical IP, Fabric IP and Processor IP, will deliver customers unparalleled design flexibility on GLOBALFOUNDRIES' most advanced HKMG semiconductor manufacturing capabilities. The collaborative efforts of the partnership will initially focus on enabling SoC products which use the low power and high performance ARM Cortex -A9 processor on GLOBALFOUNDRIES 28nm HKMG process. The characteristics of GLOBALFOUNDRIES 28nm "Gate First" HKMG technology is optimized for high performance processing with minimal leakage making it an ideal choice for advanced mobile solutions.
The SoC enablement program, built around a full suite of ARM Physical IP, Fabric IP and Processor IP, will deliver customers unparalleled design flexibility on GLOBALFOUNDRIES' most advanced HKMG semiconductor manufacturing capabilities. The collaborative efforts of the partnership will initially focus on enabling SoC products which use the low power and high performance ARM Cortex -A9 processor on GLOBALFOUNDRIES 28nm HKMG process. The characteristics of GLOBALFOUNDRIES 28nm "Gate First" HKMG technology is optimized for high performance processing with minimal leakage making it an ideal choice for advanced mobile solutions.
| Wednesday, September 30th 2009 |
As the semiconductor industry begins its transition to the next technology node, GLOBALFOUNDRIES is on track to take its position as the foundry technology leader. On October 1 at the Global Semiconductor Alliance Emerging Opportunities Expo & Conference in Santa Clara, Calif., GLOBALFOUNDRIES (Booth 321) will provide the latest details on its technology roadmap for the 32nm/28nm generations and its innovative "Gate First" approach to building transistors based on High-K Metal Gate (HKMG) technology.
"With each new technology generation, semiconductor foundries are increasingly challenged with the economics to sustain R&D and the know-how to bring these technologies to market in high-volume," said Len Jelinek, director and chief analyst, iSuppli. "With a heritage of rapidly ramping leading-edge technologies to high volumes at mature yields, combined with aggressive investments in capacity and technology, GLOBALFOUNDRIES is uniquely-positioned to challenge for next-generation foundry leadership."
"With each new technology generation, semiconductor foundries are increasingly challenged with the economics to sustain R&D and the know-how to bring these technologies to market in high-volume," said Len Jelinek, director and chief analyst, iSuppli. "With a heritage of rapidly ramping leading-edge technologies to high volumes at mature yields, combined with aggressive investments in capacity and technology, GLOBALFOUNDRIES is uniquely-positioned to challenge for next-generation foundry leadership."
| Tuesday, August 25th 2009 |
Taiwan Semiconductor Manufacturing Company, Ltd. has become the first foundry not only to achieve 28 nm functional 64 Mb SRAM yield, but also to achieve it across all three 28 nm nodes.
“Achieving 64 Mb SRAM yield across all three 28 nm process nodes is striking. It is particularly noteworthy because this achievement demonstrates the manufacturing benefits of the gate-last approach that we developed for the two TSMC 28 nm high-k metal gate processes,” explained Dr. Jack Sun, vice president, Research and Development at TSMC.
“This accomplishment underscores TSMC’s process technology capability and value in 28 nm. It shows TSMC is not only able to extend conventional SiON technology to 28 nm, but is also able to deliver the right 28 nm HKMG technology at the same time,” explained Dr. Mark Liu, senior vice president, Advanced Technology Business at TSMC.
“Achieving 64 Mb SRAM yield across all three 28 nm process nodes is striking. It is particularly noteworthy because this achievement demonstrates the manufacturing benefits of the gate-last approach that we developed for the two TSMC 28 nm high-k metal gate processes,” explained Dr. Jack Sun, vice president, Research and Development at TSMC.
“This accomplishment underscores TSMC’s process technology capability and value in 28 nm. It shows TSMC is not only able to extend conventional SiON technology to 28 nm, but is also able to deliver the right 28 nm HKMG technology at the same time,” explained Dr. Mark Liu, senior vice president, Advanced Technology Business at TSMC.
| Friday, April 17th 2009 |
In a move that signals a firm and ongoing commitment to advanced semiconductor technology leadership, IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28-nanometer, high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology.
The low-power, 28nm technology platform can provide power-performance and time-to-market advantages for producers of a broad range of power-sensitive mobile and consumer electronics applications, including the fast-growing mobile Internet device market segment. The favorable leakage characteristics of the HKMG technology result in optimized battery life for the next generation of mobile products.
The low-power, 28nm technology platform can provide power-performance and time-to-market advantages for producers of a broad range of power-sensitive mobile and consumer electronics applications, including the fast-growing mobile Internet device market segment. The favorable leakage characteristics of the HKMG technology result in optimized battery life for the next generation of mobile products.