Samsung Advanced Institute of Technology, the core R&D incubator for Samsung Electronics, has developed a new transistor structure utilizing graphene, touted as the "miracle material." As published online in the journal Science on Thursday, 17th May, this research is regarded to have brought us one step closer to the development of transistors that can overcome the limits of conventional silicon.

Currently, semiconductor devices consist of billions of silicon transistors. To increase the performance of semiconductors (the speed of devices), the options have to been to either reduce the size of individual transistors to shorten the traveling distance of electrons, or to use a material with higher electron mobility which allows for faster electron velocity. For the past 40 years, the industry has been increasing performance by reducing size. However, experts believe we are now nearing the potential limits of scaling down.Image courtesy of Sammy Hub

A new form of graphene created by researchers at The University of Texas at Austin could prevent laptops and other electronics from overheating, ultimately, overcoming one of the largest hurdles to building smaller and more powerful electronic devices.

The research team, which includes colleagues at The University of Texas at Dallas, the University of California-Riverside and Xiamen University in China, published its findings online today in the Advance Online Publication of Nature Materials. The study will also appear in the print journal of Nature Materials.

Troy, N.Y. – Electronics are getting smaller and smaller, flirting with new devices at the atomic scale. However, many scientists predict that the shrinking of our technology is reaching an end. Without an alternative to silicon-based technologies, the miniaturization of our electronics will stop. One promising alternative is graphene - the thinnest material known to man. Pure graphene is not a semiconductor, but it can be altered to display exceptional electrical behavior. Finding the best graphene-based nanomaterials could usher in a new era of nanoelectronics, optics, and spintronics (an emerging technology that uses the spin of electrons to store and process information in exceptionally small electronics).

Sweden's Chalmers University researchers demonstrated a graphene-based transistor design that allows more compact RF mixer processing. This could very well be a breakthrough, because it not only allows designing much more compact radio-frequency electronics, but also allows circuits to run faster. This could accelerate the development of Terahertz electronics systems whose applications include radar, radio astronomy, and process monitoring. Its developers have named it G-FET, or Graphene field-effect transistor. An allotrope of carbon, graphene is an honeycomb lattice of carbon atoms on an atomic-scale. It is electrically-symmetrical, giving it the ability to act as electron or hole carrier. This means that a single G-FET can act as an RF mixer without needing the feeding circuits used in current designs.Sources: The Register, Chalmers

A team at Rice University has determined that a strip of graphite only 10 atoms thick can serve as the basic element in a new type of memory, making massive amounts of storage available for computers, handheld media players, cell phones and cameras. In new research available online in Nature Materials, Rice professor James Tour and postdoctoral researchers Yubao Li and Alexander Sinitskii describe a solid-state device that takes advantage of the conducting properties of graphene. Tour said such a device would have many advantages over today’s state-of-the-art flash memory and other new technologies. Graphene memory would increase the amount of storage in a two-dimensional array by a factor of five, he said, as individual bits could be made smaller than 10 nanometers, compared to the 45-nanometer circuitry in today’s flash memory chips. The new switches can be controlled by two terminals instead of three, as in current chips.