The race is on for memory manufacturers to bring the next generation GDDR7 graphics memory into mass production. While rivals Samsung and Micron are aiming to have GDDR7 chips available in Q4 of 2024, South Korean semiconductor giant SK Hynix revealed at Computex 2024 that it won't kick off mass production until the first quarter of 2025. GDDR7 is the upcoming JEDEC standard for high-performance graphics memory, succeeding the current GDDR6 and GDDR6X specifications. The new tech promises significantly increased bandwidth and capacities to feed the appetites of next-wave GPUs and AI accelerators. At its Computex booth, SK Hynix showed off engineering samples of its forthcoming GDDR7 chips, with plans for both 16 Gb and 24 Gb densities.

The company is targeting blazing-fast 40 Gbps data transfer rates with its GDDR7 offerings, outpacing the 32 Gbps rates its competitors are starting with on 16 Gb parts. If realized, higher speeds could give SK Hynix an edge, at least initially. While trailing a quarter or two behind Micron and Samsung isn't ideal, SK Hynix claims having working samples now validates its design and allows partners to begin testing and qualification. Mass production timing for standardized memories also doesn't necessarily indicate a company is "late" - it simply means another vendor secured an earlier production window with a specific customer. The GDDR7 transition is critical for SK Hynix and others, given the insatiable demand for high-bandwidth memory to power AI, graphics, and other data-intensive workloads. Hitting its stated Q1 2025 mass production target could ensure SK Hynix doesn't fall too far behind in the high-stakes GDDR7 race, with faster and higher-density chips to potentially follow shortly after volume ramp.

According to sources familiar with the matter and reported by Bloomberg, the Biden administration is considering imposing further export controls to limit China's ability to acquire advanced semiconductor technologies crucial for developing AI systems. Gate-all-around (GAA) transistor technology and high-bandwidth memory (HBM) chips are at the center of the proposed restrictions. These cutting-edge components play a pivotal role in creating powerful AI accelerators. GAA transistors, a key feature in next-generation chips, promise substantial improvements in power efficiency and processing speeds. Meanwhile, HBM chips enable high-speed data transfer between a processor and memory. While existing sanctions prevent American firms from supplying Chinese companies with equipment for manufacturing leading-edge chips, concerns persist that China could still attain advanced capabilities through other means.

For instance, China's leading chipmaker, SMIC, could potentially integrate GAA transistors into its existing 7 nm process node, markedly enhancing performance. Access to HBM would further augment China's ability to develop AI accelerators on par with cutting-edge offerings from US firms. The reflections within the Biden administration show a strategic effort to preserve America's technological edge by denying China access to key semiconductor innovations. However, implementing such stringent export controls is a delicate balancing act, as it risks heightening tensions and prompting Chinese retaliation. No final decision has been made, and officials continue weighing the proposed restrictions' pros and cons. Nonetheless, the discussions highlight the pivotal role that semiconductor technology plays in the great power rivalry between the US and China, especially in the AI era.

SK hynix presented its leading AI memory solutions at COMPUTEX Taipei 2024 from June 4-7. As one of Asia's premier IT shows, COMPUTEX Taipei 2024 welcomed around 1,500 global participants including tech companies, venture capitalists, and accelerators under the theme "Connecting AI". Making its debut at the event, SK hynix underlined its position as a first mover and leading AI memory provider through its lineup of next-generation products.

"Connecting AI" With the Industry's Finest AI Memory Solutions
Themed "Memory, The Power of AI," SK hynix's booth featured its advanced AI server solutions, groundbreaking technologies for on-device AI PCs, and outstanding consumer SSD products. HBM3E, the fifth generation of HBM1, was among the AI server solutions on display. Offering industry-leading data processing speeds of 1.18 terabytes (TB) per second, vast capacity, and advanced heat dissipation capability, HBM3E is optimized to meet the requirements of AI servers and other applications. Another technology which has become crucial for AI servers is CXL as it can increase system bandwidth and processing capacity. SK hynix highlighted the strength of its CXL portfolio by presenting its CXL Memory Module-DDR5 (CMM-DDR5), which significantly expands system bandwidth and capacity compared to systems only equipped with DDR5. Other AI server solutions on display included the server DRAM products DDR5 RDIMM and MCR DIMM. In particular, SK hynix showcased its tall 128-gigabyte (GB) MCR DIMM for the first time at an exhibition.

On June 4th, COMPUTEX 2024 was successfully held at the Taipei Nangang Exhibition Center. Mnemonic Electronic Co., Ltd., the Taiwanese subsidiary of Longsys, showcased industry-leading high-capacity SSDs under the theme "Embracing the Era of High-Capacity SSDs." The products on display included the Mnemonic MS90 8TB SATA SSD, FORESEE ORCA 4836 series enterprise NVMe SSDs, FORESEE XP2300 PCIe Gen 4 SSDs, and rich product lines comprising embedded storage, memory modules, memory cards, and more. The company offers reliable industrial-grade, automotive-grade, and enterprise-grade storage products, providing high-capacity solutions for global users.

High-Capacity SSDs
For SSDs, Mnemonic Electronic presented products in various form factors and interfaces, including PCIe M.2, PCIe BGA, SATA M.2, and SATA 2.5-inch. The Mnemonic MS90 8 TB SATA SSD supports the SATA interface with a speed of up to 6 Gb/s (Gen 3) and is backward compatible with Gen 1 and Gen 2. It also supports various SATA low-power states (Partial/Sleep/Device Sleep) and can be used for nearline HDD replacement, surveillance, and high-speed rail systems.

Team Group at the 2024 Computex showcased its flagship gaming and overclocking memory kit, the T-Force Xtreem DDR5 series. The cooling solution features a heavy aluminium heat-spreader, with a diamond-cut T-Force logo. Besides the usual black and white colors, at Computex Team Group unveiled a pink version of its T-Force Xtreme. This DDR5 memory kit comes in capacities of 1x 16 GB, 2x 16 GB, 2x 24 GB, 2x 32 GB, and 2x 48 GB; and speeds ranging between DDR5-6400 to DDR5-7600.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is showcasing multiple high-speed overclocked DDR5 memory kits on live-demo systems featuring the latest Intel and AMD platforms at Computex 2024. Aiming to demonstrate the maximum overclocking potential of the latest G.SKILL DDR5 memory on the latest platforms, these live-demo builds feature DDR5 memory speeds of up to DDR5-10600 and a variety of high-performance motherboards from ASRock, ASUS, Gigabyte, and MSI.

DDR5-10600 32 GB (16 GB x2) - Extreme Memory Speed on Air
Aiming for the highest DDR5 memory speed possible, G.SKILL shows off a 32 GB (16 GB x2) capacity memory kit running at a whopping speed of DDR5-10600 with an AMD Ryzen 5 8500G processor and ASUS ROG Crosshair X670E GENE motherboard.

Kingston at the 2024 Computex showed us their latest gaming and overclocking PC memory products, under its FURY brand. The star attraction here, is the FURY Impact DDR5 CAMM2 module. Kingston is partnering with MSI to bring this standard to the gaming PC space, as part of its new Project Zero ecosystem. A DDR5 CAMM2 is basically a dual-channel (4 sub-channel) DDR5 memory-on-a-stick. The module has wiring for both the channels and all four sub-channels, and a total of two ranks (1R/DPC). The module sits on a land-grid, just like the processor, and is held in place by a series of screws. When installed, a CAMM2 looks a lot more discreet than a bunch of DIMMs that stick out perpendicularly to the plane of the motherboard.

Kingston DDR5 CAMM2 will come in typical dual-channel capacities, such as 32 GB; with typical speeds. The CAMM2 standard was originally designed for mainstream notebooks and mini-PC desktops, but MSI adapted it to an ATX desktop motherboard with its Project Zero backside connectivity. Next up, we have the FURY Renegade RGB DDR5 series, with its high DDR5 speeds, and plenty of RGB bling. Densities range between 16 GB (1x 16 GB) to 96 GB (2x 48 GB), with popular densities along the way, such as 2x 16 GB, and 2x 24 GB. Speeds range between DDR5-6000, all the way till DDR5-8000 (with XMP 3.0).

GeIL will feature at Computex 2024 the EVO V series and TUF GAMING ALLIANCE MEMORY with an Active Dual Fan Cooling System, ensuring optimal stability and performance. GeIL enhances memory stability and reliability with CKD (Client Clock Driver) chips in CUDIMM and CSODIMM products. The CAMM2 and LPCAMM2 modules offer faster speeds and larger capacities for next-gen compact devices, ideal for AI PCs and server applications requiring high capacity and quick access.

GeIL TUF GAMING ALLIANCE MEMORY
In addition to the well-known EVO V series, GeIL TUF GAMING ALLIANCE MEMORY includes the Active Dual Fan Cooling System design, which greatly helps heat dissipation. The enhanced cooling efficiency ensures optimal stability and performance under the most demanding conditions. To provide users with a variety of product options, GeIL TUF GAMING ALLIANCE MEMORY also offers an RGB SKU without fans. Both models will be demonstrated at GeIL's booth at Computex 2024.

GeIL - Golden Emperor International Ltd. - one of the world's leading PC components & peripheral manufacturers, today announces a new specification: DDR5-9000 CL40-54-54-112 32 GB (2 x 16 GB) optimized for AMD Ryzen 8000G series processors, providing the ultimate system performance for AMD enthusiasts.

Blazing Speed at DDR5-9000 CL40 1.45 V
With the blazing speed of DDR5 9000 MT/s, users can expect more responsive performance in the most demanding applications and games. The impressive specification of DDR5-9000 16 GB x 2 CL40-54-54-112 at 1.45 V is validated with AMD Ryzen 8000G series processors and the ASUS ROG CROSSHAIR X670E GENE motherboard, as shown in the screenshots below.

The Samsung Electronics Union is reportedly planning to strike on June 7, TrendForce reports that this strike will not impact DRAM and NAND Flash production, nor will it cause any shipment shortages. Additionally, the spot prices for DRAM and NAND Flash had been declining prior to the strike announcement, and there has been no change in this downtrend since the announcement.

Samsung's global share of DRAM and NAND Flash output in 2023 was 46.8% and 32.4%, respectively. Even though the South Korean plants account for all 46.8% of global DRAM production and about 17.8% of global NAND Flash production, TrendForce identifies four reasons why this strike will not impact production. Firstly, the strike involves employees at Samsung's headquarters in Seocho, Seoul, where union participation in higher, but these employees do not directly engage in production. Secondly, this strike is planned for only one day, which falls within the flexible scheduling range for production.

SK Hynix, leader in HBM3E memory, has now shared more details about HBM4E. Based on fresh reports by Wccftech and ET News, SK Hynix plans to make an HBM memory type that features multiple things like computing, caching, and network memory, all within the same package. This will make SK Hynix stand out from others. This idea is still in the early stages, but SK Hynix has started getting the design information it needs to support its goals. The reports say that SK Hynix wants to lay the groundwork for a versatile HBM with its upcoming HBM4 design. The company reportedly plans to include a memory controller on board, which will allow new computing abilities with its 7th generation HBM4E memory.

By using SK Hynix's method, everything will be unified as a single unit. This will not only make data transfer faster because there is less space between parts, but it will also make it more energy-efficient. Previously in April, SK Hynix announced that it has been working with TSMC to produce the next generation of HBM and improve how logic chips and HBM work together through advanced packaging. In late May, SK Hynix has disclosed yield details regarding HBM3E for the first time, the memory giant reporting successfully reducing the time needed for mass production of HBM3E chips by 50%, while getting closer to the target yield of 80%. The company plans to keep developing HBM4, which is expected to start mass production in 2026.

Micron Technology, a leader in innovative data center solutions, today announced it has achieved its qualification sample milestone for the Micron CZ120 memory expansion modules using Compute Express Link (CXL). Micron is the first in the industry to achieve this milestone, which accelerates the adoption of CXL solutions within the data center to tackle the growing memory challenges stemming from existing data-intensive workloads and emerging artificial intelligence (AI) and machine learning (ML) workloads.

Using a new and emerging CXL standard, the CZ120 required substantial hardware testing for reliability, quality and performance across CPU providers and OEMs, along with comprehensive software testing for compatibility and compliance with OS and hypervisor vendors. This achievement reflects the collaboration and commitment across the data center ecosystem to validate the advantages of CXL memory. By testing the combined products for interoperability and compatibility across hardware and software, the Micron CZ120 memory expansion modules satisfy the rigorous standards for reliability, quality and performance required by customers' data centers.

Beijing has doubled down on its push for semiconductor self-sufficiency with the establishment of a new $47.5 billion investment fund to accelerate growth in the domestic chip sector. The fund, officially registered on May 24th under the name "China Integrated Circuit Industry Investment Fund Phase III", represents the largest of three state-backed vehicles aimed at cultivating China's semiconductor capabilities. The announcement comes as tensions over advanced chip technology continue to escalate between the U.S. and China. Over the past couple years, Washington has steadily ratcheted up export controls on semiconductors to Beijing over national security concerns about potential military applications. These measures have lent new urgency to China's quest for self-sufficiency in chip design and manufacturing.

With a war chest of 344 billion yuan ($47.5 billion), the "Big Fund" dwarfs the combined capital of the first two semiconductor investment vehicles launched in 2014 and 2019. Officials have outlined a multipronged strategy targeting key bottlenecks, focusing on equipment for chip fabrication plants. The fund has bankrolled major projects such as flash memory maker Yangtze Memory Technologies and leading foundries like SMIC and Huahong. China's homegrown chip industry still needs to catch up to global leaders like Intel, Samsung, and TSMC. However, the immense scale of state-directed capital illustrates Beijing's unwavering commitment to developing a self-reliant supply chain for semiconductors—a technology viewed as indispensable for economic and military competitiveness. News of the "Big Fund" sent Chinese chip stocks surging over 3% on hopes of fresh financing tailwinds.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce the highly anticipated Trident Z5 Royal series of high-performance overclock DDR5 memory. Featuring a mirrored-finish heat spreader in gold or silver color and a full-length crystalline light bar, the Trident Z5 Royal is the embodiment of high-class luxury of the flagship Trident Z5 product family.

Trident Z5 Royal marks the return of the popular luxury-class design to the new generation of DDR5 memory under the Trident Z5 design, inheriting from its DDR4 predecessor the lustrous mirrored-finish heat spreader in gold or silver color and a crystalline light bar design for a magnificent display of RGB lighting. Each heat spreader is CNC-cut from aluminium and electroplated for a stunning design befitting its Royal name.

Yesterday we reported on DDR6 memory hitting new heights of performance and it looks like LPDDR6 will follow suit, at least based on details in a JEDEC presentation. LPDDR6 will just like LPDDR5 be available as solder down memory, but it will also be available in a new LPCAMM2 module. The bus speed of LPDDR5 on LPCAMM2 modules is expected to peak at 9.2 GT/s based on JEDEC specifications, but LPDDR6 will extend this to 14.4 GT/s or roughly a 50 percent increase. However, today the fastest and only LPCAMM2 modules on the retail market which are using LPDDR5X, comes in at 7.5 GT/s, which suggests that launch speeds of LPDDR6 will end up being quite far from the peak speeds.

There will be some other interesting changes to LPDDR6 CAMM2 modules as there will be a move from 128-bit per module to 192-bit per module and each channel will go from 32-bits to 48-bits. Part of the reason for this is that LPDDR6 is moving to a 24-bit channel width, consisting of two 12-bit sub channels, as mentioned in yesterday's news post. This might seem odd at first, but in reality is fairly simple, LPDDR6 will have native ECC (Error Correction Code) or EDC (Error Detection Code) support, but it's currently not entirely clear how this will be implemented on a system level. JEDEC is also looking at developing a screwless solution for the CAMM2 and LPCAMM2 memory modules, but at the moment there's no clear solution in sight. We might also get to see LPDDR6 via LPCAMM2 modules on the desktop, although the presentation only mentions CAMM2 for the desktop, something we've already seen that MSI is working on.

G.Skill is giving finishing touches to its new line of flagship overclocking PC DDR5 memory series, the Trident Z5 Royal. The series first broke cover in Computex 2023, but the company never got around to launching actual products. It's last Royal-branded memory series that made it to mass-production was the Trident Z Royal Elite DDR4 series from 2021. The company was probably dragging its feet with the Trident Z5 Royal series because by mid-2023, memory speeds in excess of 8000 MT/s weren't as popular as they are today, among the enthusiast crowd. The G.Skill Trident Z5 Royal series memory module comes in two trims, gold and silver. Both have the same geometric design, and are crowned by an acrylic lighting diffuser that resembles a cluster of gemstones. The series will probably consist of memory kits that are both high-capacity (48 GB, 64 GB, 96 GB); and high speed (DDR5-8000 and upward). The company will probably launch these next month. We'll be sure to swing by the G.Skill booth to show you more.The company's teaser video follows.

BIWIN is a rather large OEM of consumer NAND flash and DRAM products for some of the largest PC brands, including HP and Acer, among several others. It is based out of Shenzhen, China, and trades as 688525 on the Shanghai Stock Exchange. The company has been making retail overclocking PC memory; high performance M.2 NVMe and SATA SSDs; as well as portable SSDs and USB flash drives for several years now. We've reviewed several of these including. BIWIN now wants to break cover, and sell these products under its own brand in the retail channel. BIWIN is planning to make a big splash at the 2024 Computex next month, where it will showcase not just the products it's making for the big PC brands, but also those it plans to directly market under its own marquee.

From what we gather, BIWIN will continue to be an OEM for the big ticket brands it's serving, but will also run a first-party product stack. This would give its product managers freedom to come up with original product designs and specifications for their products, and choose where and how to sell them. The company in its LinkedIn post announcing this move, also posted teasers from its upcoming Computex booth, showcasing BIWIN-branded PC overclocking memory, portable SSDs, USB flash drives, memory cards, and M.2 NVMe SSDs. We'll be sure to give you a detailed tour of this booth from Computex.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is announcing the release of Ripjaws M5 RGB, a high-performance RGB DDR5 memory series designed for the latest DDR5-enabled Intel platforms. At launch, initial specifications will be offered up to DDR5-6400 CL32-39-39-102 96 GB (2x48GB). Available in matte black or matte white aluminium heatspreaders and features customizable RGB lighting, the Ripjaws M5 RGB is an ideal memory kit for a wide variety of PC builds and themes.

Designed for Stylish Performance
Available in matte white or matte black aluminium heatspreaders and standing at 41 mm tall, the Ripjaws M5 RGB series is designed for a minimalistic look and features customizable RGB lighting to match a wide variety of PC build themes.

Intel has prepared the Core Ultra 5-238V, a Lunar Lake-MX CPU that integrates 32 GB of LPDDR5X memory into the CPU package. This new design represents a significant departure from the traditional approach of using separate memory modules, promising enhanced performance and efficiency, similar to what Apple is doing with its M series of processors. The Core Ultra 5-238V is the first of its kind for Intel to hit mass consumers. Previous attempt was with Lakefield, which didn't take off, but had advanced 3D stacked Foveros packaging. With 32 GB of high-bandwidth, low-power LPDDR5X memory directly integrated into the CPU package, the Core Ultra 5-238V eliminates the need for separate memory modules, reducing latency and improving overall system responsiveness. This seamless integration results in faster data transfer rates and lower power consumption with LPDDR5X memory running at 8533 MT.

Applications that demand intensive memory usage, such as video editing, 3D rendering, and high-end gaming, will be the first to experience performance gains. Users can expect smoother multitasking, quicker load times, and more efficient handling of memory-intensive tasks. The Core Ultra 5-238V is equipped with four big Lion Cove and four little Skymont cores, in combination with seven Xe2-LPG cores based on Battlemage GPU microarchitecture. The bigger siblings to Core Ultra 5, the Core Ultra 7 series, will feature eight Xe2-LPG cores instead of seven, with the same CPU core count, while all of them will run the fourth generation NPU.

Patriot Memory, a renowned name in performance memory and storage solutions, has teamed up with MSI, an innovator in gaming hardware, to unleash the Viper Xtreme 5 RGB DDR5 MPOWER Series - an extreme-speed DDR5 memory kit crafted for gamers, overclockers, and power users. This cutting-edge collaboration between the two brands combines blistering data rates up to 8000MT/s with massive 32 GB (16 GB x2) or 48 GB (24 GB x2) capacities. The Viper Xtreme 5 RGB DDR5 MPOWER series unleashes a torrent of memory bandwidth, turbocharging gaming rigs, content creation workstations, and other high-intensity applications demanding extreme responsiveness and throughput.

Optimized for Maximum Overclocking Potential
Intel XMP 3.0 certified for seamless plug-and-play overclocking on the latest Intel platforms, the Xtreme 5 RGB DDR5 MPOWER kit also integrates with MSI's user-friendly EZ Dashboard utility. This enables granular control over advanced timings and voltages to extract every last drop of performance.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell Mechanism for 3D X-DRAM. Andy Hsu, Founder & CEO presented groundbreaking Technology CAD (TCAD) simulation results for NEO's 3D X-DRAM during the 16th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.

Neo Semiconductor reveals a unique performance boosting mechanism called Back-gate Channel-depth Modulation (BCM) for Floating Body Cell that can increase data retention by 40,000X and sensing window by 20X.

Micron Technology, Inc., today announced the availability of Crucial LPCAMM2, the disruptive next-generation laptop memory form factor that features LPDDR5X mobile memory to level up laptop performance for professionals and creators. Consuming up to 58% less active power and with a 64% space savings compared to DDR5 SODIMMs, LPCAMM2 delivers higher bandwidth and dual-channel support with a single module. LPCAMM2 is an ideal high-performance memory solution for handling AI PC and complex workloads and is compatible with the powerful and versatile Lenovo ThinkPad P1 Gen 7 mobile workstations.

"LPCAMM2 is a game-changer for mobile workstation users who want to enjoy the benefits of the latest mobile high performance memory technology without sacrificing superior performance, upgradeability, power efficiency or space," said Jonathan Weech, senior director of product marketing for Micron's Commercial Products Group. "With LPCAMM2, we are delivering a future-proof memory solution, enabling faster speeds and longer battery life to support demanding creative and AI workloads."

SK hynix participated in the first-ever Compute Express Link Consortium Developers Conference (CXL DevCon) held in Santa Clara, California from April 30-May 1. Organized by a group of more than 240 global semiconductor companies known as the CXL Consortium, CXL DevCon 2024 welcomed a majority of the consortium's members to showcase their latest technologies and research results.

CXL is a technology that unifies the interfaces of different devices in a system such as semiconductor memory, storage, and logic chips. As it can increase system bandwidth and processing capacity, CXL is receiving attention as a key technology for the AI era in which high performance and capacity are essential. Under the slogan "Memory, The Power of AI," SK hynix showcased a range of CXL products at the conference that are set to strengthen the company's leadership in AI memory technology.

SK hynix held a press conference unveiling its vision and strategy for the AI era today at its headquarters in Icheon, Gyeonggi Province, to share the details of its investment plans for the M15X fab in Cheongju and the Yongin Semiconductor Cluster in Korea and the advanced packaging facilities in Indiana, U.S.

The event, hosted by theChief Executive Officer Kwak Noh-Jung, three years before the May 2027 completion of the first fab in the Yongin Cluster, was attended by key executives including the Head of AI Infra Justin (Ju-Seon) Kim, Head of DRAM Development Kim Jonghwan, Head of the N-S Committee Ahn Hyun, Head of Manufacturing Technology Kim Yeongsik, Head of Package & Test Choi Woojin, Head of Corporate Strategy & Planning Ryu Byung Hoon, and the Chief Financial Officer Kim Woo Hyun.

Micron Technology, Inc. (Nasdaq: MU), today announced it is leading the industry by validating and shipping its high-capacity monolithic 32Gb DRAM die-based 128 GB DDR5 RDIMM memory in speeds up to 5,600 MT/s on all leading server platforms. Powered by Micron's industry-leading 1β (1-beta) technology, the 128 GB DDR5 RDIMM memory delivers more than 45% improved bit density, up to 22% improved energy efficiency and up to 16% lower latency over competitive 3DS through-silicon via (TSV) products.

Micron's collaboration with industry leaders and customers has yielded broad adoption of these new high-performance, large-capacity modules across high-volume server CPUs. These high-speed memory modules were engineered to meet the performance needs of a wide range of mission-critical applications in data centers, including artificial intelligence (AI) and machine learning (ML), high-performance computing (HPC), in-memory databases (IMDBs) and efficient processing for multithreaded, multicore count general compute workloads. Micron's 128 GB DDR5 RDIMM memory will be supported by a robust ecosystem including AMD, Hewlett Packard Enterprise (HPE), Intel, Supermicro, along with many others.