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DapuStor Roealsen5 R5110 3.8 TB (Kioxia BiCS4 eTLC)

3.8 TB
Capacity
DP616
Controller
TLC
Flash
PCIe 4.0 x8
Interface
Add-In Card
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Front
SSD Controller
Controller
NAND Die
NAND Die
The DapuStor Roealsen5 R5110 is a solid-state drive in the Add-In Card form factor. It is only available in the 3.8 TB capacity listed on this page. With the rest of the system, the DapuStor Roealsen5 R5110 interfaces using a PCI-Express 4.0 x8 connection. The SSD controller is the DP616 from DapuStor. DapuStor has installed 96-layer TLC NAND flash on the Roealsen5 R5110, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Roealsen5 R5110 is rated for sequential read speeds of up to 9,600 MB/s and 5,200 MB/s write; random IOPS reach up to 1720K for reads and 270K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. DapuStor guarantees an endurance rating of 7008 TBW, a high value.

Solid-State-Drive

Capacity: 3.8 TB (3840 GB)
Hardware Versions:
  • Kioxia BiCS4 eTLC
    3.8 TB
  • Kioxia BiCS5 eTLC
    7.5 TB
Overprovisioning: 519.7 GB / 14.5 %
Production: Active
Released: Unknown
Part Number: Unknown
Market: Enterprise

Physical

Form Factor: Add-In Card
Interface: PCIe 4.0 x8
Protocol: NVMe 1.4
Power Draw: 6.5 W (Idle)
Unknown (Avg)
18.0 W (Max)

Controller

Manufacturer: DapuStor
Name: DP616
Architecture: ARM Cortex-A53
Core Count: 8-Core
Frequency: 1,800 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 16 @ 1,600 MT/s
Chip Enables: 8
Controller Features: DRAM

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: Unknown
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type and Size: Unknown

Performance

Sequential Read: 9,600 MB/s
Sequential Write: 5,200 MB/s
Random Read: 1,720,000 IOPS
Random Write: 270,000 IOPS
Endurance: 7008 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)
Jun 1st, 2024 02:41 EDT change timezone

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