Report an Error

Galax HOF Pro 20 512 GB

512 GB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Galax HOF Pro 20 is a solid-state drive in the M.2 2280 form factor. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Galax HOF Pro 20 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Galax has installed 96-layer TLC NAND flash on the HOF Pro 20, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The HOF Pro 20 is rated for sequential read speeds of up to 4,800 MB/s and 2,100 MB/s write; random IOPS reach up to 400K for reads and 500K for writes.
At its launch, the SSD was priced at 95 USD. The warranty length is set to five years, which is an excellent warranty period. Galax guarantees an endurance rating of 850 TBW, a good value.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Unknown
Price at Launch: 95 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G8NBJR-UHC
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 4,800 MB/s
Sequential Write: 2,100 MB/s
Random Read: 400,000 IOPS
Random Write: 500,000 IOPS
Endurance: 850 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.9
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

Jun 1st, 2024 03:54 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts