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Intel DC S3510 120 GB

120 GB
Capacity
PC29AS21CB0
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Intel DC S3510 was a solid-state drive in the 2.5" form factor, launched in May 2015, that is no longer in production. It was available in capacities ranging from 80 GB to 1.6 TB. This page reports specifications for the 120 GB variant. With the rest of the system, the Intel DC S3510 interfaces using a SATA 6 Gbps connection. The SSD controller is the PC29AS21CB0 from Intel. Intel has installed MLC NAND flash on the DC S3510, the flash chips are made by Micron. The DC S3510 is rated for sequential read speeds of up to 475 MB/s and 135 MB/s write; random IO reaches 68K IOPS for read and 5K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Intel guarantees an endurance rating of 70 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 120 GB
Variants: 80 GB 120 GB 240 GB 480 GB 800 GB 1.2 TB 1.6 TB
Overprovisioning: 16.2 GB / 14.5 %
Production: End-of-life
Released: May 2015
Part Number: SSDSC2BB120G6
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.60 W (Idle)
2.4 W (Avg)
3.5 W (Max)

Controller

Manufacturer: Intel
Name: PC29AS21CB0
Architecture: ARM
Flash Channels: 8
Controller Features: DRAM

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: 8 chips @ 128 Gbit
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Dies per Chip: 1 die @ 128 Gbit
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: Unknown
Capacity: 256 MB
(1x 256 MB)

Performance

Sequential Read: 475 MB/s
Sequential Write: 135 MB/s
Random Read: 68,000 IOPS
Random Write: 5,300 IOPS
Endurance: 70 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)
Jun 1st, 2024 06:21 EDT change timezone

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