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IRDM M.2 SSD 512 GB (E12 + Toshiba BiCS4)

512 GB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
I 2 Hard
Back
PCB Front
I 2 Hard
PCB Front
DRAM
I 2 Hard
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The IRDM M.2 SSD is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is only available in the 512 GB capacity listed on this page. With the rest of the system, the IRDM M.2 SSD interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. IRDM has installed 96-layer TLC NAND flash on the M.2 SSD, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The M.2 SSD is rated for sequential read speeds of up to 3,200 MB/s and 2,000 MB/s write; random IOPS reach up to 295K for reads and 500K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. IRDM guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Hardware Versions:
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2021
Part Number: IR-SSDPR-P34B-512-80
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: IA7AG54A0A
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G8NBJR-UHC
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 2,000 MB/s
Random Read: 295,000 IOPS
Random Write: 500,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

Jun 1st, 2024 02:21 EDT change timezone

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