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Kingston KC2000 500 GB

500 GB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
PCB Front
Tweaktown
PCB Front
PCB Back
Tweaktown
PCB Back
DRAM
Tweaktown
DRAM
Flash
Tweaktown
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Kingston KC2000 was a solid-state drive in the M.2 2280 form factor, launched in May 2019, that is no longer in production. It was available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Kingston KC2000 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. Kingston has installed 96-layer TLC NAND flash on the KC2000, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The KC2000 is rated for sequential read speeds of up to 3,000 MB/s and 2,000 MB/s write; random IO reaches 350K IOPS for read and 250K for writes.
At its launch, the SSD was priced at 114 USD. The warranty length is set to five years, which is an excellent warranty period. Kingston guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: End-of-life
Released: May 2019
Price at Launch: 114 USD
Part Number: SKC2000M8/500G
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Rebranded: FH64B08UCT1-64 (Rebranded by Kingston)
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ 512 Gbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 1 die @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: Nanya NT5CC128M16JR-EK
Capacity: 512 MB
(2x 256 MB)
Organization: 2Gx16
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 3,000 MB/s
Sequential Write: 2,000 MB/s
Random Read: 350,000 IOPS
Random Write: 250,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 02:34 EDT change timezone

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