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Kioxia CD6-R 3.8 TB

3.8 TB
Capacity
88SS1132
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.2
Form Factor
PCB Front
Post.Smzd
PCB Front
PCB Back
Post.Smzd
PCB Back
DRAM
Post.Smzd
DRAM
DRAM 2
Post.Smzd
DRAM 2
Flash
Post.Smzd
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Kioxia CD6-R is a solid-state drive in the U.2 form factor, launched on February 20th, 2020. It is available in capacities ranging from 960 GB to 15 TB. This page reports specifications for the 3.8 TB variant. With the rest of the system, the Kioxia CD6-R interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the 88SS1132 from Marvell, a DRAM cache chip is available. Kioxia has installed 96-layer TLC NAND flash on the CD6-R, the flash chips are made by Toshiba. To improve write speeds, a cache is used, so bursts of incoming writes are handled more quickly, once it is full, writes complete at 2350 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The CD6-R is rated for sequential read speeds of up to 6,200 MB/s and 2,350 MB/s write; random IO reaches 1000K IOPS for read and 60K for writes.
At its launch, the SSD was priced at 2974 USD. The warranty length is set to five years, which is an excellent warranty period. Kioxia guarantees an endurance rating of 7008 TBW, a high value.

Solid-State-Drive

Capacity: 3.8 TB (3840 GB)
Variants: 960 GB 1.9 TB 3.8 TB 7.5 TB 15 TB
Overprovisioning: 519.7 GB / 14.5 %
Production: Active
Released: Feb 20th, 2020
Price at Launch: 2974 USD
Part Number: KCD61LUL3T84
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 5.0 W (Idle)
Unknown (Avg)
15.0 W (Max)

Controller

Manufacturer: Marvell
Name: 88SS1132
Architecture: ARM 32-bit Cortex-M3
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 16 @ 800 MT/s
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TH58LJT2V24BA8H
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2666 CL16
Name: Samsung K4A4G085WF-BCTD (512MB x2) + SK Hynix H5AN8G8NCJR-VKC (1GB x4)
Capacity: 5120 MB

Performance

Sequential Read: 6,200 MB/s
Sequential Write: 2,350 MB/s
Random Read: 1,000,000 IOPS
Random Write: 60,000 IOPS
Endurance: 7008 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Unknown
Speed when Cache Exhausted: approx. 2350 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Opal
  • TCG Ruby
  • FIPS 140-2
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Sustained Random Write: ~ 60.000 IOPS (4 KiB Q1T1)
Interface PCIe 4.0 Single x4 with U.3 Form Factor
True capacity is 4.096 GiB, of which 3.840 GB are available for the end user of which 3.577 GB are available space.
There are 6 KYA 35V 220μF capacitors

Controller:

Kioxia has SSDs marked as TC58NC1132GTC which is a Marvell Design

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 03:01 EDT change timezone

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