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Kioxia Exceria Plus 2 TB

2 TB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
DRAM
Guru3D
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Kioxia Exceria Plus was a solid-state drive in the M.2 2280 form factor, launched on June 25th, 2020, that is no longer in production. It was available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Kioxia Exceria Plus interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Kioxia has installed 96-layer TLC NAND flash on the Exceria Plus, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 40 GB, once it is full, writes complete at 1000 MB/s. The Exceria Plus is rated for sequential read speeds of up to 3,400 MB/s and 3,200 MB/s write; random IO reaches 680K IOPS for read and 620K for writes.
At its launch, the SSD was priced at 270 USD. The warranty length is set to five years, which is an excellent warranty period. Kioxia guarantees an endurance rating of 800 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: End-of-life
Released: Jun 25th, 2020
Price at Launch: 270 USD
Part Number: LRD10Z002TG8
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown (Idle)
Unknown (Avg)
7.6 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TH58LJT1T24BA8C
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ 2 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK Hynix H5AN8G6NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,200 MB/s
Random Read: 680,000 IOPS
Random Write: 620,000 IOPS
Endurance: 800 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 40 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1000 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 06:09 EDT change timezone

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