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Kioxia FL6 800 GB

800 GB
Capacity
TC58NC1132GTC
Controller
SLC
Flash
PCIe 4.0 x4
Interface
U.3
Form Factor
PCB Front
Chipbell
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The Kioxia FL6 is a solid-state drive in the U.3 form factor, launched on September 2nd, 2021. It is available in capacities ranging from 800 GB to 3 TB. This page reports specifications for the 800 GB variant. With the rest of the system, the Kioxia FL6 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the TC58NC1132GTC (88SS1132) from Kioxia-Marvell, a DRAM cache chip is available. Kioxia has installed 96-layer SLC NAND flash on the FL6, the flash chips are made by Toshiba. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The FL6 is rated for sequential read speeds of up to 6,200 MB/s and 6,200 MB/s write; random IO reaches 1480K IOPS for read and 360K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Kioxia guarantees an endurance rating of 87600 TBW, an extremely high value, making this drive fit for demanding enterprise applications.

Solid-State-Drive

Capacity: 800 GB
Variants: 800 GB 1.6 TB 3 TB
Overprovisioning: 278.9 GB / 37.4 %
Production: Active
Released: Sep 2nd, 2021
Part Number: KFL61HUL800G
Market: Enterprise

Physical

Form Factor: U.3
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 5.0 W (Idle)
14.0 W (Avg)
Unknown (Max)

Controller

Manufacturer: Kioxia-Marvell
Name: TC58NC1132GTC (88SS1132)
Architecture: ARM 32-bit Cortex-M3
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 16 @ 800 MT/s
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4 XL-Flash
Part Number: TH58LJT0SA4BA8H
Type: SLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ 1 Tbit
Topology: Charge Trap
Die Size: 96 mm²
(1.3 Gbit/mm²)
Dies per Chip: 8 dies @ 128 Gbit
Planes per Die: 16
Decks per Die: 1
Read Time (tR): 4 µs
Program Time (tProg): 75 µs
Block Erase Time (tBERS): 853 ms
Die Read Speed: 390 MB/s
Die Write Speed: 208 MB/s
Endurance:
(up to)
100000 P/E Cycles
(100000 in SLC Mode)
Page Size: 4 KB

DRAM Cache

Type: DDR4
Name: Samsung
Capacity: Unknown

Performance

Sequential Read: 6,200 MB/s
Sequential Write: 6,200 MB/s
Random Read: 1,480,000 IOPS
Random Write: 360,000 IOPS
Endurance: 87600 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 60.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • TCG Opal
  • TCG Ruby
  • FIPS 140-2
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

Rebranded Marvell 88SS1132

Jun 1st, 2024 05:41 EDT change timezone

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