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Memblaze PBlaze5 D510 1.9 TB

1.9 TB
Capacity
PM8632A1-F3EI
Controller
TLC
Flash
PCIe 3.0 x4
Interface
U.2
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Memblaze PBlaze5 D510 was a solid-state drive in the U.2 form factor, that is no longer in production. It was available in capacities ranging from 1.9 TB to 3.8 TB. This page reports specifications for the 1.9 TB variant. With the rest of the system, the Memblaze PBlaze5 D510 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PM8632A1-F3EI NVMe2108HC Harding from Microchip Flashtech Microsemi, a DRAM cache chip is available. Memblaze has installed 64-layer TLC NAND flash on the PBlaze5 D510, the flash chips are made by Toshiba. The PBlaze5 D510 is rated for sequential read speeds of up to 3,400 MB/s and 1,700 MB/s write; random IO reaches 510K IOPS for read and 60K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Memblaze guarantees an endurance rating of 3504 TBW, a high value.

Solid-State-Drive

Capacity: 1.9 TB (1920 GB)
Variants: 1.9 TB 3.8 TB
Overprovisioning: 259.9 GB / 14.5 %
Production: End-of-life
Released: Unknown
Part Number: P5510DS0192T00
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Microchip Flashtech Microsemi
Name: PM8632A1-F3EI NVMe2108HC Harding
Architecture: RISC Tensilica Xtensa 32-bit
Core Count: 6-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 533 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 16 chips @ 1 Tbit
ONFI: 3.2
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 1478 Blocks

DRAM Cache

Type: DDR4-2666 CL16
Name: Micron
Capacity: 2048 MB
(4x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 1,700 MB/s
Random Read: 510,000 IOPS
Random Write: 60,000 IOPS
Endurance: 3504 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)

Jun 1st, 2024 05:55 EDT change timezone

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