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Netac NV3000 RGB 1 TB

1 TB
Capacity
RTS5762
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Disassembly
Mario Mazzotti (YT)
Disassembly
PCB Front
Mario Mazzotti (YT)
PCB Front
PCB Back
Mario Mazzotti (YT)
PCB Back
Flash
Mario Mazzotti (YT)
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Netac NV3000 RGB is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Netac NV3000 RGB interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the RTS5762 from Realtek, a DRAM cache chip is available. Netac has installed 64-layer TLC NAND flash on the NV3000 RGB, the flash chips are made by YMTC. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 380 GB, once it is full, writes complete at 190 MB/s. The NV3000 RGB is rated for sequential read speeds of up to 3,400 MB/s and 2,000 MB/s write; random IO reaches 150K IOPS for read and 200K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Netac guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2022
Part Number: NT01NV3000RGB-1T0- E4X
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Realtek
Name: RTS5762
Architecture: ARM 32-bit
Core Count: Dual-Core
Frequency: 391 MHz
Flash Channels: 8
Chip Enables: 4

NAND Flash

Manufacturer: YMTC
Name: Xtacking 1.0
Part Number: NTEF02TY3BL1G9
Type: TLC
Technology: 64-layer
Speed: 800 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Topology: Charge Trap
Process: 40 nm
Die Size: 58 mm²
(4.4 Gbit/mm²)
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 73 per NAND String
87.7% Vertical Efficiency
Read Time (tR): 74 µs
Program Time (tProg): 760 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 432 MB/s
Die Write Speed: 42 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1006 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: NANYA NT5CC64M16GP-DI
Capacity: 128 MB
(1x 128 MB)
Organization: 1Gx16
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 2,000 MB/s
Random Read: 150,000 IOPS
Random Write: 200,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 380 GB
(dynamic only)
Speed when Cache Exhausted: approx. 190 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

This Realtek controller is a Hybrid controller, it supports DRAM Cache for storing Meta-Data, but also supports H.M.B. (Host Memory Buffer)

NAND Die:

Array Eficiency of over 90%
The 64-Word Layers NAND Die from YMTC actuall has 73-Gate Layers, being 64 for storage, 5 DWL (Dummy Word Layers) alongside 4 select Gates (1 SG and 3 Drain SGs)

PS: Bit-line pitch is 40nm
NAND Die Endurance: From 1500 to 3000 P.E.C.
NAND Flash Bus: Up to 800 MT/s
Page Read in SLC Mode: 34µs
Page Write in SLC Mode: 34µs
Block Erase in SLC Mode: 3.3ms

Jun 13th, 2024 02:34 EDT change timezone

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