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Patriot P300 2 TB (SM2263XT)

2 TB
Capacity
SM2263XT
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Patriot P300 is a solid-state drive in the M.2 2280 form factor. It is available in capacities ranging from 128 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Patriot P300 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263XT from Silicon Motion, a DRAM cache is not available. Patriot has installed 64-layer TLC NAND flash on the P300, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The P300 is rated for sequential read speeds of up to 2,100 MB/s and 1,650 MB/s write; random IO reaches 290K IOPS for read and 260K for writes.
At its launch, the SSD was priced at 350 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Patriot guarantees an endurance rating of 640 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 128 GB 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Unknown
Price at Launch: 350 USD
Part Number: P300P2TBM28US
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2263XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Part Number: TPBHG55AIV
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 4 chips @ 4 Tbit
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 132 mm²
(3.9 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,100 MB/s
Sequential Write: 1,650 MB/s
Random Read: 290,000 IOPS
Random Write: 260,000 IOPS
Endurance: 640 TBW
Warranty: 3 Years
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Drive:

And might also features IMFT NANDs instead of Toshiba's BiCS3 NANDs.

Controller:

The difference between this and the non-XT revision (SM2263, SM2263G, SM2263ENG, etc.) is that this revision doesn't support the DRAM cache, in fact it uses HMB (Host Memory Buffer).

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)
tPROG withoug Overhead: ~ 695µs (Avg) (~ 46 MB/s per die)
tPROG w/ ~25% Overhead: ~ 927µs (Avg) (~ 34.5 MB/s per die)

Jun 1st, 2024 05:32 EDT change timezone

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