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PNY XLR8 CS3030 500 GB

500 GB
Capacity
Phison E12
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
PCB Front
Android PC TV
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The PNY XLR8 CS3030 is a solid-state drive in the M.2 2280 form factor, launched on May 8th, 2019. It is available in capacities ranging from 250 GB to 4 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the PNY XLR8 CS3030 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12-27 from Phison, a DRAM cache chip is available. PNY has installed 64-layer TLC NAND flash on the XLR8 CS3030, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The XLR8 CS3030 is rated for sequential read speeds of up to 3,500 MB/s and 2,000 MB/s write.
At its launch, the SSD was priced at 90 USD. The warranty length is set to five years, which is an excellent warranty period. PNY guarantees an endurance rating of 170 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 250 GB 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: Unknown
Released: May 8th, 2019
Price at Launch: 90 USD
Part Number: M280CS3030-500-RB
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12-27
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Part Number: TCBBG55AIV
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 132 mm²
(3.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: NANYA NT5CC128M16JR-EK
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,000 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 170 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

This drive line-up also suffered from component swaps, and even the endurace has been reduced drastically.
The first variant had around 800 TB of endurance.

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)
tPROG withoug Overhead: ~ 695µs (Avg) (~ 46 MB/s per die)
tPROG w/ ~25% Overhead: ~ 927µs (Avg) (~ 34.5 MB/s per die)

Jun 1st, 2024 05:18 EDT change timezone

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