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PNY XLR8 CS3040 2 TB

2 TB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
Package
Package
PCB Front
Tech-Critter
PCB Front
PCB Back
Tech-Critter
PCB Back
DRAM
Tech-Critter
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The PNY XLR8 CS3040 is a solid-state drive in the M.2 2280 form factor, launched on October 22nd, 2020. It is available in capacities ranging from 500 GB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the PNY XLR8 CS3040 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. PNY has installed 96-layer TLC NAND flash on the XLR8 CS3040, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The XLR8 CS3040 is rated for sequential read speeds of up to 5,600 MB/s and 3,900 MB/s write.
At its launch, the SSD was priced at 215 USD. The warranty length is set to five years, which is an excellent warranty period. PNY guarantees an endurance rating of 3600 TBW, a good value.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Oct 22nd, 2020
Price at Launch: 215 USD
Part Number: M280CS3040-2TB-RB
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TABHG65AWV
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK Hynix H5AN8GNCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx8

Performance

Sequential Read: 5,600 MB/s
Sequential Write: 3,900 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 3600 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)
Jun 1st, 2024 05:29 EDT change timezone

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