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Reletech P400 256 GB (YMTC BCT1B)

256 GB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Front
PCB Front
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The Reletech P400 is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is available in capacities ranging from 256 GB to 512 GB. This page reports specifications for the 256 GB variant. With the rest of the system, the Reletech P400 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Reletech has installed 64-layer TLC NAND flash on the P400, the flash chips are made by YMTC. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The P400 is rated for sequential read speeds of up to 3,500 MB/s and 1,400 MB/s write.
At its launch, the SSD was priced at 41 USD. The warranty length is set to five years, which is an excellent warranty period. Reletech guarantees an endurance rating of 420 TBW, a good value.

Solid-State-Drive

Capacity: 256 GB
Variants: 256 GB 512 GB
Hardware Versions:
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: 2021
Price at Launch: 41 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 1.0
Part Number: CA59G64AOA
Type: TLC
Technology: 64-layer
Speed: 800 MT/s
Capacity: 4 chips @ 512 Gbit
ONFI: 4.0
Topology: Charge Trap
Process: 40 nm
Die Size: 58 mm²
(4.4 Gbit/mm²)
Dies per Chip: 2 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 73 per NAND String
87.7% Vertical Efficiency
Read Time (tR): 74 µs
Program Time (tProg): 760 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 432 MB/s
Die Write Speed: 42 MB/s
Endurance:
(up to)		 1500 P/E Cycles
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1006 Blocks

DRAM Cache

Type: DDR3L-2133 CL18
Name: UniSemicon SCB13H2G160EF
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 1,400 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 420 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.9
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: Unknown
PS5 Compatible: No

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Array Eficiency of over 90%
The 64-Word Layers NAND Die from YMTC actuall has 73-Gate Layers, being 64 for storage, 5 DWL (Dummy Word Layers) alongside 4 select Gates (1 SG and 3 Drain SGs)

PS: Bit-line pitch is 40nm
NAND Die Endurance: From 1500 to 3000 P.E.C.
NAND Flash Bus: Up to 800 MT/s
Page Read in SLC Mode: 34µs
Page Write in SLC Mode: 34µs
Block Erase in SLC Mode: 3.3ms
Jun 14th, 2024 02:10 EDT change timezone

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