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Sabrent Rocket Q 500 GB

500 GB
Capacity
Phison E12S
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Front
PCB Front
Tweaktown
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The Sabrent Rocket Q is a solid-state drive in the M.2 2280 form factor, launched on July 13th, 2020. It is available in capacities ranging from 500 GB to 8 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Sabrent Rocket Q interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison. Sabrent has installed 96-layer QLC NAND flash on the Rocket Q, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The Rocket Q is rated for sequential read speeds of up to 2,000 MB/s and 1,000 MB/s write; random IOPS reach up to 95K for reads and 250K for writes.
At its launch, the SSD was priced at 70 USD. The warranty length is set to five years, which is an excellent warranty period. Sabrent guarantees an endurance rating of 120 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 500 GB 1 TB 2 TB 4 TB 8 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: Active
Released: Jul 13th, 2020
Price at Launch: 70 USD
Part Number: SB-RKTQ-500
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM

NAND Flash

Manufacturer: Micron
Name: N28A FortisFlash
Part Number: IA5BG67AWA
Type: QLC
Technology: 96-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: 2 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 115 mm²
(8.9 Gbit/mm²)
Dies per Chip: 2 dies @ 1 Tbit
Planes per Die: 4
Read Time (tR): 90 µs
Program Time (tProg): 2080 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 711 MB/s
Die Write Speed: 30 MB/s
Endurance:
(up to)		 1500 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4608 Pages
Plane Size: 492 Blocks

DRAM Cache

Type: Unknown
Capacity: 256 MB
(1x 256 MB)

Performance

Sequential Read: 2,000 MB/s
Sequential Write: 1,000 MB/s
Random Read: 95,000 IOPS
Random Write: 250,000 IOPS
Endurance: 120 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

Possibly 256MB of DRAM Cache or 128MB.
5-year warranty, but only 1-year without registration

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

tPROG with overhead: 2080 µs (Avg 30 MB/s per die)
Jun 1st, 2024 09:26 EDT change timezone

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