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Samsung 860 QVO 2 TB

2 TB
Capacity
Samsung MJX Maru
Controller
QLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 860 QVO was a solid-state drive in the 2.5" form factor, launched on December 16th, 2018, that is no longer in production. It was available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 860 QVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MJX Maru (S4LR030) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer QLC NAND flash on the 860 QVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 78 GB, once it is full, writes complete at 160 MB/s. The 860 QVO is rated for sequential read speeds of up to 550 MB/s and 520 MB/s write; random IOPS reach up to 96K for reads and 89K for writes.
At its launch, the SSD was priced at 300 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 720 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: End-of-life
Released: Dec 16th, 2018
Price at Launch: 300 USD
Part Number: MZ-76Q2T0B/AM
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.03 W (Idle)
3.0 W (Avg)
Unknown (Max)

Controller

Manufacturer: Samsung
Name: MJX Maru (S4LR030)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Part Number: K9XVGB8J1M-CCK0
Type: QLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 8 Tbit
Topology: Charge Trap
Die Size: 182 mm²
(5.6 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 140 µs
Program Time (tProg): 3000 µs
Block Erase Time (tBERS): 3.5 ms
Die Write Speed: 12 MB/s
Page Size: 16 KB
Block Size: 1024 Pages

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F8E164HM-BGCJ
Capacity: 2048 MB
(1x 2048 MB)
Organization: 16Gx16

Performance

Sequential Read: 550 MB/s
Sequential Write: 520 MB/s
Random Read: 96,000 IOPS
Random Write: 89,000 IOPS
Endurance: 720 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 78 GB
(72 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 160 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

NAND Speed Bus: Up to 1 GT/s.

Controller:

Controller Clock speed: Up to 1 GHz.

NAND Die:

Or could be 70 Word Lines.

Jun 1st, 2024 02:57 EDT change timezone

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