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Samsung PM9E1 512 GB
512 GB
Capacity
Samsung Preto
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
This SSD is not released yet.
Data on this page may change in the future.
The Samsung PM9E1 will be a solid-state drive in the M.2 2280 form factor, that is expected to launch in 2024. It is available in capacities ranging from 512 GB to 4 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Samsung PM9E1 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the Presto (S4LY027) from Samsung, a DRAM cache chip is available. Samsung has installed 236-layer TLC NAND flash on the PM9E1, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. Performance characteristics of the drive are unknown.
We have no information regarding the price at release. The TBW rating for the Samsung PM9E1 512 GB is unknown, too. New information will be added to this page as soon as it becomes available.
We have no information regarding the price at release. The TBW rating for the Samsung PM9E1 512 GB is unknown, too. New information will be added to this page as soon as it becomes available.
Solid-State-Drive
| Capacity: | 512 GB |
|---|---|
| Variants: | 512 GB 1 TB 2 TB 4 TB |
| Overprovisioning: | 35.2 GB / 7.4 % |
| Production: | Unreleased |
| Released: | 2024 |
| Part Number: | MZVLC512HFJD |
| Market: | Consumer |
Physical
| Form Factor: | M.2 2280 (Single-Sided) |
|---|---|
| Interface: | PCIe 5.0 x4 |
| Protocol: | NVMe 2.0 |
| Power Draw: | Unknown |
Controller
| Manufacturer: | Samsung |
|---|---|
| Name: | Presto (S4LY027) |
| Architecture: | ARM 32-bit Cortex-R8 |
| Core Count: | 5-Core |
| Foundry: | Samsung FinFET |
| Process: | 5 nm |
| Flash Channels: | 8 @ 2,400 MT/s |
| Chip Enables: | 4 |
| Controller Features: | DRAM (enabled) |
NAND Flash
| Manufacturer: | Samsung |
|---|---|
| Name: | V-NAND V8 |
| Type: | TLC |
| Technology: | 236-layer |
| Speed: | 2400 MT/s |
| Capacity: | Unknown |
| Toggle: | 5.0 |
| Topology: | Charge Trap |
| Die Size: | 89 mm² (5.8 Gbit/mm²) |
| Planes per Die: | 4 |
| Decks per Die: | 2 |
| Read Time (tR): | 40 µs |
| Program Time (tProg): | 390 µs |
| Block Erase Time (tBERS): | 4.0 ms |
| Die Read Speed: | 1600 MB/s |
| Die Write Speed: | 164 MB/s |
| Page Size: | 16 KB |
DRAM Cache
| Type: | LPDDR4 |
|---|---|
| Capacity: | Unknown |
Performance
| Sequential Read: | Unknown |
|---|---|
| Sequential Write: | Unknown |
| Random Read: | Unknown |
| Random Write: | Unknown |
| Endurance: | Unknown |
| Warranty: | Unknown |
| SLC Write Cache: | Yes |
Features
| TRIM: | Yes |
|---|---|
| SMART: | Yes |
| Power Loss Protection: | No |
| Encryption: |
|
| RGB Lighting: | Unknown |
| PS5 Compatible: | Yes |
Notes
NAND Die:Samsung lists the die as able to do 184 MB/s with an average of 347 µs tPROG, but it does manage to deliver 164 MB/s. |
Jun 1st, 2024 08:33 EDT
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