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SanDisk Extreme Pro 512 GB

512 GB
Capacity
WD 20-82-007011
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The SanDisk Extreme Pro was a solid-state drive in the M.2 2280 form factor, launched in 2018, that is no longer in production. It was available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the SanDisk Extreme Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-007011 Triton MP28 from WD, a DRAM cache chip is available. SanDisk has installed 64-layer TLC NAND flash on the Extreme Pro, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The Extreme Pro is rated for sequential read speeds of up to 3,400 MB/s and 2,500 MB/s write; random IOPS reach up to 410K for reads and 330K for writes.
At its launch, the SSD was priced at 450 USD. The warranty length is set to five years, which is an excellent warranty period. SanDisk guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: 2018
Price at Launch: 450 USD
Part Number: SDSSDXPM2-500G-G25
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: WD
Name: 20-82-007011 Triton MP28
Architecture: ARM 32-bit Cortex-R
Core Count: Triple-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Rebranded: (Rebranded by SanDisk)
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 2 chips @ Unknown
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 132 mm²
(3.9 Gbit/mm²)
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: DDR4
Capacity: 512 MB
(1x 512 MB)

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 2,500 MB/s
Random Read: 410,000 IOPS
Random Write: 330,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)
tPROG withoug Overhead: ~ 695µs (Avg) (~ 46 MB/s per die)
tPROG w/ ~25% Overhead: ~ 927µs (Avg) (~ 34.5 MB/s per die)

Jun 1st, 2024 03:01 EDT change timezone

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