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Seagate Beskar Ingot Drive Special Edition 1 TB

1 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Seagate Beskar Ingot Drive Special Edition is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is available in capacities ranging from 500 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Seagate Beskar Ingot Drive Special Edition interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Seagate has installed 176-layer TLC NAND flash on the Beskar Ingot Drive Special Edition, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Beskar Ingot Drive Special Edition is rated for sequential read speeds of up to 7,300 MB/s and 6,000 MB/s write; random IO reaches 800K IOPS for read and 1000K for writes.
At its launch, the SSD was priced at 145 USD. The warranty length is set to five years, which is an excellent warranty period. Seagate guarantees an endurance rating of 1275 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2021
Price at Launch: 145 USD
Part Number: ZP1000GM30033
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.02 W (Idle)
6.3 W (Avg)
Unknown (Max)

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Part Number: IA7BG94AYA
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: DDR4-2666
Name: SK Hynix H5AN8G6NCJR-UHC
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 7,300 MB/s
Sequential Write: 6,000 MB/s
Random Read: 800,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 1275 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.7
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

DRAM Cache operates at 1600Mbps.

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)
Jun 1st, 2024 02:15 EDT change timezone

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