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Silicon Power UD70 2 TB

2 TB
Capacity
Phison E12S
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Silicon Power UD70 is a solid-state drive in the M.2 2280 form factor, launched on July 14th, 2020. It is available in capacities ranging from 500 GB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Silicon Power UD70 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Silicon Power has installed 96-layer QLC NAND flash on the UD70, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 526 GB. Copying data out of the SLC cache (folding) completes at 200 MB/s. The UD70 is rated for sequential read speeds of up to 3,400 MB/s and 3,000 MB/s write; random IOPS reach up to 250K for reads and 650K for writes.
At its launch, the SSD was priced at 196 USD. The warranty length is set to five years, which is an excellent warranty period. Silicon Power guarantees an endurance rating of 530 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jul 14th, 2020
Price at Launch: 196 USD
Part Number: SP02KGBP34UD7005
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.47 W (Idle)
3.2 W (Avg)
5.5 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: N28A FortisFlash
Part Number: IA7HG66AWA
Type: QLC
Technology: 96-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 115 mm²
(8.9 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Read Time (tR): 90 µs
Program Time (tProg): 2080 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 711 MB/s
Die Write Speed: 30 MB/s
Endurance:
(up to)
1500 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4608 Pages
Plane Size: 492 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: Kingston D2516ECMDXGJD
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,000 MB/s
Random Read: 250,000 IOPS
Random Write: 650,000 IOPS
Endurance: 530 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: approx. 526 GB
(dynamic only)
Cache Folding Speed: 200 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

tPROG with overhead: 2080 µs (Avg 30 MB/s per die)

Jun 1st, 2024 08:49 EDT change timezone

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