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SK Hynix Gold S31 1 TB

1 TB
Capacity
SK Hynix Quartz
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Package
Package
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The SK Hynix Gold S31 is a solid-state drive in the 2.5" form factor, launched on August 15th, 2019. It is available in capacities ranging from 250 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the SK Hynix Gold S31 interfaces using a SATA 6 Gbps connection. The SSD controller is the Quartz SH87830CC from SK Hynix, a DRAM cache chip is available. SK Hynix has installed 72-layer TLC NAND flash on the Gold S31, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 12 GB, once it is full, writes complete at 471 MB/s. The Gold S31 is rated for sequential read speeds of up to 560 MB/s and 525 MB/s write; random IO reaches 95K IOPS for read and 87K for writes.
At its launch, the SSD was priced at 106 USD. The warranty length is set to five years, which is an excellent warranty period. SK Hynix guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Aug 15th, 2019
Price at Launch: 106 USD
Part Number: SHGS31-1000GS-2
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.20 W (Idle)
1.9 W (Avg)
3.2 W (Max)

Controller

Manufacturer: SK Hynix
Name: Quartz SH87830CC
Architecture: ARM 32-bit Cortex-R
Core Count: Dual-Core
Foundry: TSCM
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V4
Part Number: H25QFT8F4A9R-BDG
Type: TLC
Technology: 72-layer
Speed: 800 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 3.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 82 per NAND String
87.8% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: LPDDR3-1866
Name: SK Hynix H9CCNNN8GTALAR-NUD
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 560 MB/s
Sequential Write: 525 MB/s
Random Read: 95,000 IOPS
Random Write: 87,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 12 GB
Speed when Cache Exhausted: approx. 471 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

This drive make use of a small Static pSLC Cache in order to improve performance, reliability and endurance.

NAND Die:

This die is divided into 2 decks of 82 gate layers.
Upper deck:
3x DSTs (DSL)
3x SSL
4x Dummy Word Lines
32x Word Lines (32 TLC Layers)

2x Dummy word lines in between each decks

Lower deck:
40x Word Lines (40 TLC Layers)

Jun 1st, 2024 03:42 EDT change timezone

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