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SK Hynix PE6011 1.9 TB

1.9 TB
Capacity
SH58800GG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
U.2
Form Factor
Front
PCB Front
PCB Front
PCB Back
PCB Back
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The SK Hynix PE6011 is a solid-state drive in the U.2 form factor, launched in 2020. It is available in capacities ranging from 1.9 TB to 7.5 TB. This page reports specifications for the 1.9 TB variant. With the rest of the system, the SK Hynix PE6011 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SH58800GG from SK Hynix, a DRAM cache chip is available. SK Hynix has installed 72-layer TLC NAND flash on the PE6011, the flash chips are made by SK Hynix. The PE6011 is rated for sequential read speeds of up to 3,200 MB/s and 2,450 MB/s write; random IO reaches 610K IOPS for read and 70K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. SK Hynix guarantees an endurance rating of 3504 TBW, a high value.

Solid-State-Drive

Capacity: 1.9 TB (1920 GB)
Variants: 1.9 TB 3.8 TB 7.5 TB
Overprovisioning: 259.9 GB / 14.5 %
Production: Active
Released: 2020
Part Number: PE6011U2STD
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 3.7 W (Idle)
10.0 W (Avg)
14.0 W (Max)

Controller

Manufacturer: SK Hynix
Name: SH58800GG
Architecture: ARM ?
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V4
Part Number: H25QFTMF4A9R-BDH
Type: TLC
Technology: 72-layer
Speed: 800 MT/s
Capacity: 4 chips @ 4 Tbit
Toggle: 3.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 82 per NAND String
87.8% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G8NBJR-UHC
Capacity: 2048 MB
(4x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 2,450 MB/s
Random Read: 610,000 IOPS
Random Write: 70,000 IOPS
Endurance: 3504 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

This die is divided into 2 decks of 82 gate layers.
Upper deck:
3x DSTs (DSL)
3x SSL
4x Dummy Word Lines
32x Word Lines (32 TLC Layers)

2x Dummy word lines in between each decks

Lower deck:
40x Word Lines (40 TLC Layers)
Jun 1st, 2024 07:57 EDT change timezone

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