Report an Error

SK Hynix Platinum P41 1 TB

1 TB
Capacity
Aries
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Back
Quasar Zone
Back
Package
Quasar Zone
Package
PCB Front
Quasar Zone
PCB Front
DRAM
Quasar Zone
DRAM
Flash
Quasar Zone
Flash
SSD Controller
Controller
NAND Die
NAND Die
The SK Hynix Platinum P41 is a solid-state drive in the M.2 2280 form factor, launched on May 11th, 2022. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the SK Hynix Platinum P41 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Aries (ACNS075 PHC633.00S-2) from SK Hynix, a DRAM cache chip is available. SK Hynix has installed 176-layer TLC NAND flash on the Platinum P41, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 213 GB, once it is full, writes complete at 2250 MB/s. Copying data out of the SLC cache (folding) completes at 1500 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Platinum P41 is rated for sequential read speeds of up to 7,000 MB/s and 6,500 MB/s write; random IO reaches 1400K IOPS for read and 1300K for writes.
At its launch, the SSD was priced at 150 USD. The warranty length is set to five years, which is an excellent warranty period. SK Hynix guarantees an endurance rating of 750 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: May 11th, 2022
Price at Launch: 150 USD
Part Number: SHPP41-1000GM
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.78 W (Idle)
3.8 W (Avg)
5.8 W (Max)

Controller

Manufacturer: SK Hynix
Name: Aries (ACNS075 PHC633.00S-2)
Architecture: ARM 32-bit Cortex-R8
Core Count: Quad-Core
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Part Number: H25T2TC88C
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: LPDDR4
Name: SK Hynix H54G36AYRBX257
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 6,500 MB/s
Random Read: 1,400,000 IOPS
Random Write: 1,300,000 IOPS
Endurance: 750 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 213 GB
(205 GB Dynamic
+ 8 GB Static)
Speed when Cache Exhausted: approx. 2250 MB/s
Cache Folding Speed: 1500 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

ARM 32-bit Cortex-R8/M7 (1-core each, for Host) + Cortex-R8 (2-core for FTL)

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size

May 17th, 2024 14:34 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts