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Teamgroup Cardea Zero Z330 2 TB

2 TB
Capacity
RTS5763DL
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Teamgroup Cardea Zero Z330 is a solid-state drive in the M.2 2280 form factor, launched on April 15th, 2020. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Teamgroup Cardea Zero Z330 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the RTS5763DL from Realtek, a DRAM cache is not available. Teamgroup has installed 128-layer TLC NAND flash on the Cardea Zero Z330, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The Cardea Zero Z330 is rated for sequential read speeds of up to 2,100 MB/s and 1,700 MB/s write; random IOPS reach up to 220K for reads and 200K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Teamgroup guarantees an endurance rating of 1000 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Apr 15th, 2020
Part Number: TM8FP8002T0C311
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Realtek
Name: RTS5763DL
Architecture: ARM 32-bit
Core Count: Dual-Core
Flash Channels: 4
Chip Enables: 8

NAND Flash

Manufacturer: SK Hynix
Name: V6
Type: TLC
Technology: 128-layer
Speed: 1400 MT/s
Capacity: 4 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 722 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,100 MB/s
Sequential Write: 1,700 MB/s
Random Read: 220,000 IOPS
Random Write: 200,000 IOPS
Endurance: 1000 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Each die has 7 SGSs with 3 SGDs.

Jun 1st, 2024 09:24 EDT change timezone

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