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Transcend 250H 1 TB

1 TB
Capacity
SM2264F
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
The Transcend 250H is a solid-state drive in the M.2 2280 form factor, launched in February 2023. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Transcend 250H interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the SM2264F from Silicon Motion, a DRAM cache chip is available. Transcend has installed 112-layer TLC NAND flash on the 250H, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 100 GB, once it is full, writes complete at 788 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 250H is rated for sequential read speeds of up to 7,200 MB/s and 6,200 MB/s write; random IO reaches 530K IOPS for read and 420K for writes.
At its launch, the SSD was priced at 95 USD. The warranty length is set to five years, which is an excellent warranty period. Transcend guarantees an endurance rating of 780 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Feb 2023
Price at Launch: 95 USD
Part Number: TS1TMTE250H
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.64 W (Idle)
5.5 W (Avg)
8.5 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2264F
Architecture: ARM 32-bit Cortex-R8
Core Count: Quad-Core
Frequency: 700 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Rebranded: 41-5550-D04DT (Rebranded by Transcend)
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: DDR4-3200
Name: Samsung K4A8G165WC-BCWE
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,200 MB/s
Sequential Write: 6,200 MB/s
Random Read: 530,000 IOPS
Random Write: 420,000 IOPS
Endurance: 780 TBW
Warranty: 5 Years
MTBF: 3.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 100 GB
(dynamic only)
Speed when Cache Exhausted: approx. 788 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

Clock confirmed by SMI

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.

Jun 14th, 2024 23:31 EDT change timezone

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