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Western Digital SN350 1 TB (QLC)

1 TB
Capacity
WD 20-82-01008
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
Serve the Home
PCB Front
Flash
Serve the Home
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN350 is a solid-state drive in the M.2 2280 form factor, launched on February 15th, 2021. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN350 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-01008-A2 Polaris MP16 from WD, a DRAM cache is not available. Western Digital has installed 96-layer QLC NAND flash on the SN350, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The SN350 is rated for sequential read speeds of up to 3,200 MB/s and 2,500 MB/s write; random IOPS reach up to 300K for reads and 400K for writes.
At its launch, the SSD was priced at 44 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Western Digital guarantees an endurance rating of 100 TBW, a very low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Feb 15th, 2021
Price at Launch: 44 USD
Part Number: WDS100T3G0C
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.11 W (Idle)
Unknown (Avg)
5.0 W (Max)

Controller

Manufacturer: WD
Name: 20-82-01008-A2 Polaris MP16
Architecture: ARM 32-bit Cortex-R
Core Count: Triple-Core
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: QLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 1 chip @ Unknown
Toggle: 3.2
Topology: Charge Trap
Die Size: 158 mm²
(8.4 Gbit/mm²)
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 160 µs
Program Time (tProg): 3290 µs
Die Read Speed: 200 MB/s
Die Write Speed: 10 MB/s
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 3642 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 2,500 MB/s
Random Read: 300,000 IOPS
Random Write: 400,000 IOPS
Endurance: 100 TBW
Warranty: 3 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Jun 1st, 2024 06:31 EDT change timezone

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