Monday, March 20th 2023

DNP Develops TGV Glass Core Substrate for Semiconductor Packages

Dai Nippon Printing Co., Ltd. (DNP) has developed a Glass Core Substrate (GCS) targeting next-generation semiconductor packages. The new product replaces conventional resin substrates (ex. FC-BGA: Flip Chip-Ball Grid Array) with a glass substrate. Through the use of high-density Through Glass Via (TGV), it is now possible to provide a higher performance semiconductor package than that based on currently available technology. In addition, by adapting our panel manufacturing process, the new product can also support demands for high efficiency and large-scale substrate.

Features
Fine pitch and high reliability
The newly developed GCS includes a TGV necessary for electrically connecting the fine metal wiring configured on the front and back of the glass. It is a Conformal Type glass substrate in which a metal layer is adhered to the side walls of the via. Our new proprietary manufacturing method enhances the adhesion between glass and metal, which was difficult to achieve with conventional technology, to realize fine pitch and high reliability.
High aspect ratio and large-scale
The newly developed glass substrate has an aspect ratio of 9+, and maintains sufficient adhesive qualities to configure fine wiring. As there are few restrictions regarding the thickness of the glass substrate used, it is possible to boost the degree of freedom when designing warpage, rigidity, and flatness. It is also possible to accommodate package scalability by employing our panel manufacturing process.

Going Forward
In addition to the existing Filling Type glass substrate that fills the glass Via with copper, DNP is also promoting the scalability of the newly developed Conformal Type glass substrate to a panel size of 510 x 515 mm. We aim for sales of 5.0 billion yen in FY 2027.
Source: Dai Nippon Printing Co., Ltd.
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3 Comments on DNP Develops TGV Glass Core Substrate for Semiconductor Packages

#1
Steevo
I want to see TSV and TGV applied so we can cool the active side of the CPU almost directly instead of through the wafer thickness.
Posted on Reply
#2
Memeito
SteevoI want to see TSV and TGV applied so we can cool the active side of the CPU almost directly instead of through the wafer thickness.
How about using an artificial diamond substrate - it insulates from electricity but the heat conductivity is five times greater than copper! If only they could be produced cheaper...
Posted on Reply
#3
LabRat 891
I bet Raja Koduri and AMD wished they had access to this tech, circa Vega II.
Seems every last VII is doomed to thermal-warping of the epoxy package.
Posted on Reply
Apr 24th, 2024 20:26 EDT change timezone

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